3.2A, 20V, 0.11ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
| 参数名称 | 属性值 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G8 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 20 V |
| 最大漏极电流 (ID) | 3.2 A |
| 最大漏源导通电阻 | 0.11 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G8 |
| 元件数量 | 2 |
| 端子数量 | 8 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 10 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 最大关闭时间（toff） | 110 ns |
| 最大开启时间（吨） | 120 ns |
| Base Number Matches | 1 |
| NDS9933/L86Z | NDS9933/L99Z | NDS9933/D84Z | NDS9933 | NDS9933/S62Z | |
|---|---|---|---|---|---|
| 描述 | 3.2A, 20V, 0.11ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET | 3200mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 3.2A, 20V, 0.11ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET | 3.2A, 20V, 0.11ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET | 3200mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 包装说明 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 20 V | 20 V | 20 V | 20 V | 20 V |
| 最大漏极电流 (ID) | 3.2 A | 3.2 A | 3.2 A | 3.2 A | 3.2 A |
| 最大漏源导通电阻 | 0.11 Ω | 0.11 Ω | 0.11 Ω | 0.11 Ω | 0.11 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
| 元件数量 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 8 | 8 | 8 | 8 | 8 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 最大脉冲漏极电流 (IDM) | 10 A | - | 10 A | 10 A | - |
| 最大关闭时间（toff） | 110 ns | - | 110 ns | 110 ns | - |
| 最大开启时间（吨） | 120 ns | - | 120 ns | 120 ns | - |
| 厂商名称 | - | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
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