技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L80R12W1H3_B11
EasyPACK模块采用第二类中点钳½拓扑带有pressfit压接管脚和温度检测NTC
EasyPACKmodulewithactiveNeutralPointClamp2topologyandPressFIT/NTC
初步数据/PreliminaryData
J
V
CES
= 1200V
I
C nom
= 80A / I
CRM
= 160A
典型应用
•
三电平应用
•
太阳½应用
电气特性
•
高速IGBTH3
•
½电感设计
•
½开关损耗
•
thinQ
H
碳化硅肖特基二极管600V
机械特性
•
½热阻的Al
2
O
3
衬底
•
紧凑型设计
•
PressFIT压接技术
•
集成的安装夹½安装坚固
TypicalApplications
• 3-Level-Applications
• SolarApplications
ElectricalFeatures
• HighSpeedIGBTH3
• Lowinductivedesign
• LowSwitchingLosses
• thinQ
H
SiCSchottkydiode600V
MechanicalFeatures
• Al
2
O
3
SubstratewithLowThermalResistance
• Compactdesign
• PressFITContactTechnology
•
Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2013-03-19
revision:2.1
1
ULapproved(E83335)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
preparedby:CM
approvedby:MB
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L80R12W1H3_B11
初步数据
PreliminaryData
IGBT,T1/T4/IGBT,T1/T4
集电极－发射极电压
Collector-emittervoltage
½用的集电极电流
Implementedcollectorcurrent
连续集电极直流电流
ContinuousDCcollectorcurrent
集电极重复峰值电流
Repetitivepeakcollectorcurrent
总损耗
Totalpowerdissipation
栅极－发射极峰值电压
Gate-emitterpeakvoltage
最大额定值/MaximumRatedValues
T
vj
= 25°C
T
C
= 100°C, T
vj
= 175°C
T
C
= 25°C, T
vj
= 175°C
t
P
= 1 ms
T
C
= 25°C, T
vj
= 175°C
V
CES
I
CN
1200
80
40
90
160
275
+/-20
min.
I
C
= 40 A, V
GE
= 15 V
I
C
= 40 A, V
GE
= 15 V
I
C
= 40 A, V
GE
= 15 V
I
C
= 2,00 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 40 A, V
CE
= 350 V
V
GE
= 15 V
R
Gon
= 1,1
Ω
I
C
= 40 A, V
CE
= 350 V
V
GE
= 15 V
R
Gon
= 1,1
Ω
I
C
= 40 A, V
CE
= 350 V
V
GE
= 15 V
R
Goff
= 1,1
Ω
I
C
= 40 A, V
CE
= 350 V
V
GE
= 15 V
R
Goff
= 1,1
Ω
I
C
= 40 A, V
CE
= 350 V, L
S
= 40 nH
V
GE
= 15 V, di/dt = 1000 A/µs (T
vj
=150°C)
R
Gon
= 1,1
Ω
I
C
= 40 A, V
CE
= 350 V, L
S
= 40 nH
V
GE
= 15 V, du/dt = 2450 V/µs (T
vj
=150°C)
R
Goff
= 1,1
Ω
V
GE
≤
15 V, V
CC
= 800 V
V
CEmax
= V
CES
-L
sCE
·di/dt
每个IGBT/perIGBT
每个IGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
dateofpublication:2013-03-19
revision:2.1
2
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
t
d on
5,0
typ.
1,55
1,75
1,80
5,8
0,57
10
4,60
0,26
0,15
0,165
0,17
0,03
0,035
0,04
0,285
0,375
0,375
0,03
0,045
0,05
0,68
0,83
0,92
1,05
1,70
1,80
260
0,50
0,45
max.
1,95
V
V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
V
A
A
A
I
C nom
I
C
I
CRM
P
tot
V
GES
A
W
V
特征值/CharacteristicValues
集电极－发射极饱和电压
Collector-emittersaturationvoltage
栅极阈值电压
Gatethresholdvoltage
栅极电荷
Gatecharge
内部栅极电阻
Internalgateresistor
输入电容
Inputcapacitance
反向传输电容
Reversetransfercapacitance
集电极-发射极截止电流
Collector-emittercut-offcurrent
栅极-发射极漏电流
Gate-emitterleakagecurrent
开通延迟时间(电感负½½)
Turn-ondelaytime,inductiveload
上升时间(电感负½½)
Risetime,inductiveload
关断延迟时间(电感负½½)
Turn-offdelaytime,inductiveload
下降时间(电感负½½)
Falltime,inductiveload
开通损耗(每脉冲)
Turn-onenergylossperpulse
关断损耗(每脉冲）
Turn-offenergylossperpulse
短路数据
SCdata
结－壳热阻
Thermalresistance,junctiontocase
壳－散热器热阻
Thermalresistance,casetoheatsink
preparedby:CM
approvedby:MB
6,5
1,0
100
t
r
t
d off
t
f
E
on
E
off
I
SC
R
thJC
R
thCH
t
P
≤
10 µs, T
vj
= 150°C
0,55 K/W
K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L80R12W1H3_B11
初步数据
PreliminaryData
二极管,D1/D4/Diode,D1/D4
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
T
vj
= 25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
R
= 0 V, t
P
= 10 ms, T
vj
= 150°C
V
RRM
I
F
I
FRM
I²t
min.
I
F
= 35 A, V
GE
= 0 V
I
F
= 35 A, V
GE
= 0 V
I
F
= 35 A, V
GE
= 0 V
I
F
= 35 A, - di
F
/dt = 2300 A/µs (T
vj
=150°C)
V
R
= 350 V
V
GE
= -15 V
I
F
= 35 A, - di
F
/dt = 2300 A/µs (T
vj
=150°C)
V
R
= 350 V
V
GE
= -15 V
I
F
= 35 A, - di
F
/dt = 2300 A/µs (T
vj
=150°C)
V
R
= 350 V
V
GE
= -15 V
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
F
1200
35
50
250
220
typ.
1,65
1,65
1,65
60,0
70,0
70,0
2,40
5,00
6,00
0,70
1,40
1,75
0,80
0,75
max.
2,15
V
V
V
A
A
A
µC
µC
µC
mJ
mJ
mJ
V
A
A
A²s
A²s
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗（每脉冲）
Reverserecoveryenergy
结－壳热阻
Thermalresistance,junctiontocase
壳－散热器热阻
Thermalresistance,casetoheatsink
I
RM
Q
r
E
rec
R
thJC
R
thCH
0,90 K/W
K/W
preparedby:CM
approvedby:MB
dateofpublication:2013-03-19
revision:2.1
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L80R12W1H3_B11
初步数据
PreliminaryData
IGBT,T2/T3/IGBT,T2/T3
集电极－发射极电压
Collector-emittervoltage
½用的集电极电流
Implementedcollectorcurrent
连续集电极直流电流
ContinuousDCcollectorcurrent
集电极重复峰值电流
Repetitivepeakcollectorcurrent
总损耗
Totalpowerdissipation
栅极－发射极峰值电压
Gate-emitterpeakvoltage
最大额定值/MaximumRatedValues
T
vj
= 25°C
T
C
= 100°C, T
vj
= 175°C
T
C
= 25°C, T
vj
= 175°C
t
P
= 1 ms
T
C
= 25°C, T
vj
= 175°C
V
CES
I
CN
600
50
40
65
100
175
+/-20
min.
I
C
= 40 A, V
GE
= 15 V
I
C
= 40 A, V
GE
= 15 V
I
C
= 40 A, V
GE
= 15 V
I
C
= 0,80 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 600 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 40 A, V
CE
= 350 V
V
GE
= 15 V
R
Gon
= 8,2
Ω
I
C
= 40 A, V
CE
= 350 V
V
GE
= 15 V
R
Gon
= 8,2
Ω
I
C
= 40 A, V
CE
= 350 V
V
GE
= 15 V
R
Goff
= 8,2
Ω
I
C
= 40 A, V
CE
= 350 V
V
GE
= 15 V
R
Goff
= 8,2
Ω
I
C
= 40 A, V
CE
= 350 V, L
S
= 25 nH
V
GE
= 15 V, di/dt = 2300 A/µs (T
vj
=150°C)
R
Gon
= 8,2
Ω
I
C
= 40 A, V
CE
= 350 V, L
S
= 25 nH
V
GE
= 15 V, du/dt = 2600 V/µs (T
vj
=150°C)
R
Goff
= 8,2
Ω
V
GE
≤
15 V, V
CC
= 360 V
V
CEmax
= V
CES
-L
sCE
·di/dt
每个IGBT/perIGBT
每个IGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
dateofpublication:2013-03-19
revision:2.1
4
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
t
d on
4,9
typ.
1,35
1,45
1,50
5,8
0,50
0,0
3,10
0,095
0,028
0,028
0,028
0,015
0,02
0,02
0,20
0,26
0,27
0,06
0,10
0,11
0,48
0,65
0,70
1,90
2,50
2,65
350
250
0,75
0,70
max.
1,70
V
V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
A
V
A
A
A
I
C nom
I
C
I
CRM
P
tot
V
GES
A
W
V
特征值/CharacteristicValues
集电极－发射极饱和电压
Collector-emittersaturationvoltage
栅极阈值电压
Gatethresholdvoltage
栅极电荷
Gatecharge
内部栅极电阻
Internalgateresistor
输入电容
Inputcapacitance
反向传输电容
Reversetransfercapacitance
集电极-发射极截止电流
Collector-emittercut-offcurrent
栅极-发射极漏电流
Gate-emitterleakagecurrent
开通延迟时间(电感负½½)
Turn-ondelaytime,inductiveload
上升时间(电感负½½)
Risetime,inductiveload
关断延迟时间(电感负½½)
Turn-offdelaytime,inductiveload
下降时间(电感负½½)
Falltime,inductiveload
开通损耗(每脉冲)
Turn-onenergylossperpulse
关断损耗(每脉冲）
Turn-offenergylossperpulse
短路数据
SCdata
结－壳热阻
Thermalresistance,junctiontocase
壳－散热器热阻
Thermalresistance,casetoheatsink
preparedby:CM
approvedby:MB
6,5
1,0
100
t
r
t
d off
t
f
E
on
E
off
I
SC
R
thJC
R
thCH
t
P
≤
8 µs, T
vj
= 25°C
t
P
≤
6 µs, T
vj
= 150°C
0,85 K/W
K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L80R12W1H3_B11
初步数据
PreliminaryData
二极管,D2/D3/Diode,D2/D3
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
T
vj
= 25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
RRM
I
F
I
FRM
I²t
min.
I
F
= 16 A, V
GE
= 0 V
I
F
= 16 A, V
GE
= 0 V
I
F
= 16 A, - di
F
/dt = 1000 A/µs (T
vj
=150°C)
V
R
= 350 V
I
F
= 16 A, - di
F
/dt = 1000 A/µs (T
vj
=150°C)
V
R
= 350 V
I
F
= 16 A, - di
F
/dt = 1000 A/µs (T
vj
=150°C)
V
R
= 350 V
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
V
F
I
RM
600
16
32
32,0
typ.
1,50
1,65
4,00
5,00
0,10
0,20
0,015
0,015
1,10
0,75
max.
1,70
V
V
A
A
µC
µC
mJ
mJ
V
A
A
A²s
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗（每脉冲）
Reverserecoveryenergy
结－壳热阻
Thermalresistance,junctiontocase
壳－散热器热阻
Thermalresistance,casetoheatsink
Q
r
E
rec
R
thJC
R
thCH
1,20 K/W
K/W
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
R100偏差
DeviationofR100
耗散功率
Powerdissipation
B-值
B-value
B-值
B-value
B-值
B-value
min.
T
C
= 25°C
T
C
= 100°C, R
100
= 493
Ω
T
C
= 25°C
R
2
= R
25
exp [B
25/50
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/80
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/100
(1/T
2
- 1/(298,15 K))]
R
25
∆R/R
P
25
B
25/50
B
25/80
B
25/100
-5
typ.
5,00
3375
3411
3433
max.
5
20,0
kΩ
%
mW
K
K
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:CM
approvedby:MB
dateofpublication:2013-03-19
revision:2.1
5
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