H
Surface Mount LED Indicator
Technical Data
HSMD-TX00
HSME-TX00
HSMG-TX00
HSMH-TX00
HSMS-TX00
HSMY-TX00
Features
• Compatible with Automatic
Placement Equipment
• Compatible with Infrared
and Vapor Phase Reflow
Solder Processes
• Packaged in 12 mm or 8 mm
tape on 7" or 13" Diameter
Reels
• EIA Standard Package
• Low Package Profile
• Nondiffused Package
Excellent for Backlighting
and Coupling to Light Pipes
Description
These solid state surface mount
indicators are designed with a flat
top and sides to be easily handled
by automatic placement
equipment. A glue pad is provided
for adhesive mounting processes.
They are compatible with
convective IR and vapor phase
reflow soldering and conductive
epoxy attachment processes.
The package size and configura-
tion conform to the EIA-535
BAAC standard specification for
case size 3528 tantalum
capacitors. The folded leads
permit dense placement and
provide an external solder joint
for ease of inspection.
These devices are nondiffused,
providing high intensity for
applications such as backlighting,
light pipe illumination, and front
panel indication.
Device Selection Guide
DH AS
AlGaAs
Red
HSMH-
T400
T500
T600
T700
High
Efficiency
Red
HSMS-
T400
T500
T600
T700
High
Performance
Green
HSMG-
T400
T500
T600
T700
Emerald
Green
HSME-
T400
T500
T600
T700
Orange
HSMD-
T400
T500
T600
T700
Yellow
HSMY-
T400
T500
T600
T700
Description
12 mm Tape, 7" Reel,
2000 Devices
12 mm Tape, 13" Reel,
8000 Devices
8 mm Tape, 7" Reel,
2000 Devices
8 mm Tape, 13" Reel,
8000 Devices
1-204
5964-9359E
Package Dimensions
3.5
±
0.2
(0.138
±
0.008)
2.8
±
0.2
(0.110
±
0.008)
2.2 NOM.
(0.087)
2.7 NOM.
(0.106)
NOTES:
1. ALL DIMENSIONS ARE IN MILLIMETERS (INCHES).
2. THE LEADS ARE COPPER ALLOY, 85% Sn/15% Pb PLATING.
CATHODE NOTCH
3.1 NOM.
(0.122)
1.9
±
0.2
(0.075
±
0.008)
0.7 MIN.
(0.028)
0.1
(0.004)
NOM.
0.8
±
0.3
(0.031
±
0.012)
(2 PLACES)
2.2
±
0.1
(0.087
±
0.004)
1.3
(0.050)
MIN.
Tape and Reel
Specifications
Hewlett Packard surface mount
LEDs are packaged tape and reel
in accordance with EIA-481A,
Taping of Surface Mount
Components for Automatic
Placement.
This packaging
system is compatible with tape-
fed automatic pick and place
systems. Each reel is sealed in a
vapor barrier bag for added
protection. Bulk packaging in
vapor barrier bags is available
upon special request.
USER FEED
DIRECTION
CATHODE
PITCH: 4 mm (0.157 IN.)
T
T
E D
L R
WKA
E
H C
A
P
h
p
REEL DIAMETER:
178 mm (7 IN.) OR 330 mm (13 IN.)
CARRIER TAPE WIDTH:
12 mm (0.472 IN.) OR 8 mm (0.315 IN.)
1-205
Absolute Maximum Ratings at T
A
= 25
°
C
DH AS
AlGaAs
Red
30
300
20
High
Efficiency
Red
30
90
25
High
Perf.
Green
30
90
25
Emerald
Green
30
90
25
Parameter
DC Forward
Current
[1]
Peak Forward
Current
[2]
Average
Forward
Current
[2]
LED Junction
Temperature
Transient
Forward
Current
[3]
(10
µs
Pulse)
Reverse Voltage
(I
R
= 100 mA)
Operating
Temperature
Range
Storage
Temperature
Range
Reflow Soldering
Temperature
Convective IR
Vapor Phase
Orange
30
90
25
Yellow
30
60
20
Units
mA
mA
mA
95
°C
500
5
-40 to +85
-20 to +85
mA
V
°C
-40 to +85
°C
235°C Peak, above 185°C for 90 seconds.
215°C for 3 minutes.
Notes:
1. Derate dc current linearly from 50°C: For AlGaAs red, high efficiency red, and green devices at 0.67 mA/°C. For yellow devices at
0.44 mA/°C.
2. Refer to Figure 5 showing Maximum Tolerable Peak Current vs. Pulse duration to establish pulsed operating conditions.
3. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and
wire bond. The device should not be operated at peak currents above the Absolute Maximum Peak Forward Current.
1-206
Electrical/Optical Characteristics at T
A
= 25
°
C
DH AS AlGaAs Red HSMH-TX00
Parameter
Luminous Intensity
Forward Voltage
Reverse Breakdown Voltage
Included Angle Between
Half Intensity Points
[1]
Peak Wavelength
Dominant Wavelength
[2]
Spectral Line Half Width
Speed of Response
Capacitance
Thermal Resistance
Luminous Efficacy
[3]
Symbol
I
v
V
F
V
R
2θ
1/2
λ
PEAK
λ
d
∆λ
1/2
τ
s
C
Rθ
J-pin
η
v
5.0
Min.
9.0
Typ.
17.0
1.8
15.0
120
645
637
20
30
30
180
80
2.2
Max.
Units
mcd
V
V
deg.
nm
nm
nm
ns
pF
°C/W
lm/W
Time Constant, e
-t/τ
s
V
F
= 0, f = 1 MHz
Junction-to-Cathode
Test Conditions
I
F
= 10 mA
I
F
= 10 mA
I
R
= 100
µA
High Efficiency Red HSMS-TX00
Parameter
Luminous Intensity
Forward Voltage
Reverse Breakdown Voltage
Included Angle Between
Half Intensity Points
[1]
Peak Wavelength
Dominant Wavelength
[2]
Spectral Line Half Width
Speed of Response
Capacitance
Thermal Resistance
Luminous Efficacy
[3]
Symbol
I
v
V
F
V
R
2θ
1/2
λ
PEAK
λ
d
∆λ
1/2
τ
s
C
Rθ
J-pin
η
v
5.0
Min.
2.0
Typ.
6.0
1.9
30.0
120
635
626
40
90
11
160
145
2.5
Max.
Units
mcd
V
V
deg.
nm
nm
nm
ns
pF
°C/W
lm/W
Time Constant, e
-t/τ
s
V
F
= 0, f = 1 MHz
Junction-to-Cathode
Test Conditions
I
F
= 10 mA
I
F
= 10 mA
I
R
= 100
µA
Notes:
1.
θ
1/2
is the off-axis angle where the luminous intensity is half the on-axis value.
2. The dominant wavelength,
λ
d
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
3. The radiant intensity, I
e
, in watts per steradian, may be found from the equation I
e
= I
v
/
η
v
, where I
v
is the luminous intensity in
candelas and
η
v
is luminous efficacy in lumens/watt.
1-207
Orange HSMD-TX00
Parameter
Luminous Intensity
Forward Voltage
Reverse Breakdown Voltage
Included Angle Between
Half Intensity Points
[1]
Peak Wavelength
Dominant Wavelength
[2]
Spectral Line Half Width
Speed of Response
Capacitance
Thermal Resistance
Luminous Efficacy
[3]
Symbol
I
v
V
F
V
R
2θ
1
/
2
λ
PEAK
λ
d
∆λ
1/2
τ
s
C
Rθ
J-pin
η
v
5.0
Min.
1.5
Typ.
5.0
1.9
30.0
120
600
602
40
260
4
160
380
2.5
Max.
Units
mcd
V
V
deg.
nm
nm
nm
ns
pF
°C/W
lm/W
Time Constant, e
-t/τ
s
V
F
= 0, f = 1 MHz
Junction-to-Cathode
Test Conditions
I
F
= 10 mA
I
F
= 10 mA
I
R
= 100
µA
Yellow HSMY-TX00
Parameter
Luminous Intensity
Forward Voltage
Reverse Breakdown Voltage
Included Angle Between
Half Intensity Points
[1]
Peak Wavelength
Dominant Wavelength
[2]
Spectral Line Half Width
Speed of Response
Capacitance
Thermal Resistance
Luminous Efficacy
[3]
Symbol
I
v
V
F
V
R
2θ
1
/
2
λ
PEAK
λ
d
∆λ
1/2
τ
s
C
Rθ
J-pin
η
v
5.0
Min.
2.0
Typ.
5.0
2.0
50.0
120
583
585
36
90
15
160
500
2.5
Max.
Units
mcd
V
V
deg.
nm
nm
nm
ns
pF
°C/W
lm/W
Time Constant, e
-t/τ
s
V
F
= 0, f = 1 MHz
Junction-to-Cathode
Test Conditions
I
F
= 10 mA
I
F
= 10 mA
I
R
= 100
µA
Notes:
1.
θ
1
/
2
is the off-axis angle where the luminous intensity is half the on-axis value.
2. The dominant wavelength,
λ
d
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
3. The radiant intensity, I
e
, in watts per steradian, may be found from the equation I
e
= I
v
/
η
v
, where I
v
is the luminous intensity in
candelas and
η
v
is luminous efficacy in lumens/watt.
1-208
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