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5962R9572401VXC: 产品描述HC/UH SERIES, QUAD 2-INPUT NAND GATE, CDFP14, METAL SEALED, CERAMIC, DFP-14; 产品类别逻辑逻辑; 文件大小23KB，共2页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/

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5962R9572401VXC概述

HC/UH SERIES, QUAD 2-INPUT NAND GATE, CDFP14, METAL SEALED, CERAMIC, DFP-14

5962R9572401VXC规格参数

参数名称	属性值
零件包装代码	DFP
包装说明	DFP, FL14,.3
针数	14
Reach Compliance Code	compliant
系列	HC/UH
JESD-30 代码	R-CDFP-F14
JESD-609代码	e4
长度	9.525 mm
负载电容（CL）	50 pF
逻辑集成电路类型	NAND GATE
最大I（ol）	0.004 A
功能数量	4
输入次数	2
端子数量	14
最高工作温度	125 °C
最低工作温度	-55 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	DFP
封装等效代码	FL14,.3
封装形状	RECTANGULAR
封装形式	FLATPACK
电源	5 V
Prop。Delay @ Nom-Sup	22 ns
传播延迟（tpd）	22 ns
认证状态	Not Qualified
施密特触发器	NO
筛选级别	38535V;38534K;883S
座面最大高度	2.92 mm
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子面层	GOLD
端子形式	FLAT
端子节距	1.27 mm
端子位置	DUAL
总剂量	100k Rad(Si) V
宽度	6.285 mm
Base Number Matches	1

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HCS00MS Device Information

HCS00MS

NAND-Gate, 2-Input, Quad, Rad-Hard, High-Speed, CMOS, Logic

Get Datasheet

Ordering Information

Part No.

Status Temp.

Printer Friendly Version

HCS00DMSR Active

HCS00HMSR Active

HCS00KMSR Active

Package MSL

SMD

14 Ld SBDIP

N/A 5962R9572401VCC Contact Us

Other

14 Ld

FlatPack

N/A

Price

US $

N/A 5962R9572401VXC Contact Us

The price listed is the manufacturer's suggested retail price for quantities between 100 and

999 units. However, prices in today's market are fluid and may change without notice.

MSL

= Moisture Sensitivity Level - per IPC/JEDEC J-STD-020

SMD

= Standard Microcircuit Drawing

Description

The Intersil HCS00MS is a Radiation Hardened Quad 2-Input NAND Gate. A high on both inputs

forces the output to a Low state.

The HCS00MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This

device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS00MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D

suffix).

Key Features

3 Micron Radiation Hardened SOS CMOS

Total Dose 200K RAD (Si)

SEP Effective LET No Upsets: >100 MEV-cm

/mg

Single Event Upset (SEU) Immunity < 2 x 10

-9

Errors/Bit-Day (Typ)

Dose Rate Survivability: >1 x 10

RAD (Si)/s

Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

Cosmic Ray Upset Immunity < 2 x 10

-9

Errors/Gate Day (Typ)

Latch-Up Free Under Any Conditions

Military Temperature Range: -55

C to +125

Significant Power Reduction Compared to LSTTL ICs

DC Operating Voltage Range: 4.5V to 5.5V

Input Logic Levels

VIL = 30% of VCC Max

VIH = 70% of VCC Min

Input Current Levels Ii d 5µA at VOL, VOH

5962R9572401VXC相似产品对比

	5962R9572401VXC	5962R9572401VCC
描述	HC/UH SERIES, QUAD 2-INPUT NAND GATE, CDFP14, METAL SEALED, CERAMIC, DFP-14	HC/UH SERIES, QUAD 2-INPUT NAND GATE, CDIP14, METAL SEALED, SIDE BRAZED, CERAMIC, DIP-14
零件包装代码	DFP	DIP
包装说明	DFP, FL14,.3	DIP, DIP14,.3
针数	14	14
Reach Compliance Code	compliant	compliant
系列	HC/UH	HC/UH
JESD-30 代码	R-CDFP-F14	R-CDIP-T14
JESD-609代码	e4	e4
长度	9.525 mm	19.43 mm
负载电容（CL）	50 pF	50 pF
逻辑集成电路类型	NAND GATE	NAND GATE
最大I（ol）	0.004 A	0.004 A
功能数量	4	4
输入次数	2	2
端子数量	14	14
最高工作温度	125 °C	125 °C
最低工作温度	-55 °C	-55 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装代码	DFP	DIP
封装等效代码	FL14,.3	DIP14,.3
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK	IN-LINE
电源	5 V	5 V
Prop。Delay @ Nom-Sup	22 ns	22 ns
传播延迟（tpd）	22 ns	20 ns
认证状态	Not Qualified	Not Qualified
施密特触发器	NO	NO
筛选级别	38535V;38534K;883S	38535V;38534K;883S
座面最大高度	2.92 mm	5.08 mm
最大供电电压 (Vsup)	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V
表面贴装	YES	NO
技术	CMOS	CMOS
温度等级	MILITARY	MILITARY
端子面层	GOLD	GOLD
端子形式	FLAT	THROUGH-HOLE
端子节距	1.27 mm	2.54 mm
端子位置	DUAL	DUAL
总剂量	100k Rad(Si) V	100k Rad(Si) V
宽度	6.285 mm	7.62 mm
Base Number Matches	1	1

5962R9572401VXC

5962R9572401VXC概述

5962R9572401VXC规格参数

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