HSMS-285x Series
Surface Mount Zero Bias Schottky Detector Diodes
Data Sheet
Description
Avago’s HSMS-285x family of zero bias Schottky detector
diodes has been designed and optimized for use in small
signal (Pin <-20 dBm) applications at frequencies below
1.5 GHz. They are ideal for RF/ID and RF Tag applications
where primary (DC bias) power is not available.
Important Note:
For detector applications with input
power levels greater than –20 dBm, use the HSMS-282x
series at frequencies below 4.0 GHz, and the HSMS-286x
series at frequencies above 4.0 GHz. The HSMS-285x
series IS NOT RECOMMENDED for these higher power
level applications.
Available in various package configurations, these detec-
tor diodes provide low cost solutions to a wide variety
of design problems. Avago’s manufacturing techniques
assure that when two diodes are mounted into a single
package, they are taken from adjacent sites on the wafer,
assuring the highest possible degree of match.
Features
•
Surface Mount SOT-23/SOT-143 Packages
•
Miniature SOT-323 and SOT-363 Packages
•
High Detection Sensitivity:
up to 50 mV/µW at 915 MHz
•
Low Flicker Noise:
-162 dBV/Hz at 100 Hz
•
Low FIT (Failure in Time) Rate*
•
Tape and Reel Options Available
•
Matched Diodes for Consistent Performance
•
Better Thermal Conductivity for Higher Power
Dissipation
•
Lead-free
*
For more information see the Surface Mount Schottky Reliability
Data Sheet.
Pin Connections and Package Marking
1
2
3
6
5
4
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Notes:
1. Package marking provides orientation and identification.
2. See “Electrical Specifications” for appropriate package marking.
SOT-23/SOT-143 Package Lead Code Identification (top view)
SINGLE
3
SERIES
3
PLx
1
#0
2
1
#5
2
SOT-363 Package Lead Code Identification (top view)
UNCONNECTED
TRIO
6
5
4
6
BRIDGE
QUAD
5
4
1
2
L
3
1
2
P
3
SOT-323 Package Lead Code Identification (top view)
1
#2
2
SINGLE
3
SERIES
3
UNCONNECTED
PAIR
3
4
1
B
2
1
C
2
SOT-23/SOT-143 DC Electrical Specifications, T
C
= +25°C, Single Diode
Part
Number
HSMS-
2850
2852
2855
Test
Conditions
Package
Marking
Code
P0
P2
P5
Lead
Code
0
2
5
Configuration
Single
Series Pair
[1,2]
Unconnected Pair
[1,2]
Maximum
Forward
Voltage
V
F
(mV)
150
250
Maximum
Reverse
Leakage,
I
R
(µA)
175
Typical
Capacitance
C
T
(pF)
0.30
I
F
= 0.1 mA
I
F
= 1.0 mA
V
R
=2V
V
R
= –0.5 V to –1.0V
f = 1 MHz
Notes:
1. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
2. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.
SOT-323/SOT-363 DC Electrical Specifications, T
C
= +25°C, Single Diode
Part
Number
HSMS-
285B
285C
285L
285P
Test
Conditions
Package
Marking
Code
P0
P2
PL
PP
Lead
Code
B
C
L
P
Configuration
Single
Series Pair
Unconnected Trio
Bridge Quad
Maximum
Forward
Voltage
V
F
(mV)
150
250
Maximum
Reverse
Leakage,
I
R
(µA)
175.
Typical
Capacitance
C
T
(pF)
0.30
I
F
= 0.1 mA
I
F
= 1.0 mA
VR=2V
V
R
= 0.5 V to –1.0V
f = 1 MHz
Notes:
1. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
2. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.
RF Electrical Specifications, T
C
= +25°C, Single Diode
Part Number
HSMS-
2850
2852
2855
285B
285C
285L
285P
Test
Conditions
Typical Tangential Sensitivity
TSS (dBm) @ f = 915 MHz
– 57
Typical Voltage Sensitivity
g (mV/µW) @ f = 915 MHz
40
Typical Video
Resistance RV (KΩ)
8.0
Video Bandwidth = 2 MHz
Zero Bias
Power in = –40 dBm
R
L
= 100 KΩ, Zero Bias
Zero Bias
2
Absolute Maximum Ratings, T
C
= +25°C, Single Diode
Symbol
P
IV
T
J
T
STG
T
OP
θ
jc
Parameter
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Operating Temperature
Thermal Resistance
[2]
Unit
V
°C
°C
°C
°C/W
Absolute Maximum
[1]
SOT-23/143
SOT-323/363
2.0
150
-65 to 150
-65 to 150
500
2.0
150
-65 to 150
-65 to 150
150
ESD WARNING:
Handling Precautions Should Be Taken
To Avoid Static Discharge.
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is
made to the circuit board.
Equivalent Linear Circuit Model
HSMS-285x chip
R
j
R
S
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
(V
J
)
P
T
(XTI)
M
Units
V
pF
eV
A
A
Ω
V
HSMS-285x
3.8
0.18
0.69
3 E -4
3 E-6
1.06
25
0.35
2
0.5
C
j
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T = temperature,
°K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-285x product,
please refer to Application Note AN1124.
3
Typical Parameters, Single Diode
100
10000
R
L
= 100 KΩ
1000
30
R
L
= 100 KΩ
I
F
– FORWARD CURRENT (mA)
VOLTAGE OUT (mV)
VOLTAGE OUT (mV)
10
915 MHz
10
915 MHz
100
10
1
0.1
-50
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
1
0.1
1
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
F
– FORWARD VOLTAGE (V)
-40
-30
-20
-10
0
0.3
-50
-40
POWER IN (dBm)
-30
POWER IN (dBm)
Figure 1. Typical Forward Current
vs. Forward Voltage.
Figure 2. +25°C Output Voltage vs.
Input Power at Zero Bias.
Figure 3. +25°C Expanded Output
Voltage vs. Input Power. See Figure 2.
3.1
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
OUTPUT VOLTAGE (mV)
FREQUENCY = 2.45 GHz
P
IN
= -40 dBm
R
L
= 100 KΩ
1.1
FR4 MICROSTRIP CIRCUIT.
0.9
0 10 20 30 40 50 60 70 80 90 100
TEMPERATURE (°C)
MEASUREMENTS MADE USING A
Figure 4. Output Voltage vs.
Temperature.
4
Applications Information
Introduction
Avago’s HSMS-285x family of Schottky detector diodes
has been developed specifically for low cost, high
volume designs in small signal (P
in
< -20 dBm) applica-
tions at frequencies below 1.5 GHz. At higher frequen-
cies, the DC biased HSMS-286x family should be consid-
ered.
In large signal power or gain control applications
(P
in
> -20 dBm), the HSMS-282x and HSMS-286x prod-
ucts should be used. The HSMS-285x zero bias diode is
not designed for large signal designs.
-5
R
j
= 8.33 X 10 n T = R
V
– R
s
The Height
I
of
+ I
b
Schottky Barrier
the
S
The current-voltage characteristic of a Schottky barrier
0.026
=
at room temperature is described by the following
diode
I + I at 25°C
equation:
S b
I = I
S
(exp
V - IR
(
0.026
)
- 1)
S
Schottky Barrier Diode Characteristics
Stripped of its package, a Schottky barrier diode chip
consists of a metal-semiconductor barrier formed by de-
position of a metal layer on a semiconductor. The most
common of several different types, the passivated diode,
is shown in Figure 5, along with its equivalent circuit.
R
S
PASSIVATION
LAYER
On a semi-log plot (as shown in the Avago catalog) the
R
S
= R
d
– 0.026
current graph will be a straight line with inverse slope
I
f
2.3 X 0.026 = 0.060 volts per cycle (until the effect of R
S
is
seen in a curve that droops at high current). All Schottky
diode curves have the same slope, but not necessar-
R
V
≈
26,000
ily the same
I
value of current for a given voltage. This is
+ I
b
S
determined by the saturation current, I
S
, and is related to
the barrier height of the diode.
Through the choice of p-type or n-type silicon, and the
selection of metal, one can tailor the characteristics of a
Schottky diode. Barrier height will be altered, and at the
same time C
J
and R
S
will be changed. In general, very
low barrier height diodes (with high values of I
S
, suit-
able for zero bias applications) are realized on p-type
silicon. Such diodes suffer from higher values of R
S
than
do the n-type. Thus, p-type diodes are generally reserved
for small signal detector applications (where very high
values of R
V
swamp out high R
S
) and n-type diodes are
used for mixer applications (where high L.O. drive levels
keep R
V
low).
METAL
PASSIVATION
N-TYPE OR P-TYPE EPI
SCHOTTKY JUNCTION
N-TYPE OR P-TYPE SILICON SUBSTRATE
C
j
R
j
CROSS-SECTION OF SCHOTTKY
BARRIER DIODE CHIP
EQUIVALENT
CIRCUIT
Measuring Diode Parameters
The measurement of the five elements which make up
the low frequency equivalent circuit for a packaged
Schottky diode (see Figure 6) is a complex task. Various
techniques are used for each element. The task begins
with the elements of the diode chip itself.
C
P
Figure 5. Schottky Diode Chip.
R
S
is the parasitic series resistance of the diode, the sum
of the bondwire and leadframe resistance, the resistance
HSMS-285A/6A fig 9
of the bulk layer of silicon, etc. RF energy coupled into
R
S
is lost as heat — it does not contribute to the rectified
output of the diode. C
J
is parasitic junction capacitance
of the diode, controlled by the thickness of the epitaxial
layer and the diameter of the Schottky contact. R
j
is the
junction resistance of the diode, a function of the total
current flowing through it.
-5
R
j
= 8.33 X 10 n T = R
V
– R
s
I
S
+ I
b
L
P
R
S
R
V
C
j
=
0.026
at 25°C
I
S
+ I
b
where
V IR
S
n = ideality factor
-
(see table of SPICE parameters)
I = I
S
(exp
T = temperature in °K
- 1)
0.026
I
S
= saturation current (see table of SPICE parameters)
I
b
= externally applied bias current in amps
R
S
= R – 0.026
I
S
is a function
d
of diode barrier height, and can range
I
f
from picoamps for high barrier diodes to as much as 5
µA for very low barrier diodes.
R
V
≈
26,000
I
S
+ I
b
5
(
)
FOR THE HSMS-285x SERIES
C
P
= 0.08 pF
L
P
= 2 nH
C
j
= 0.18 pF
R
S
= 25
Ω
R
V
= 9 KΩ
Figure 6. Equivalent Circuit of a Schottky Diode.
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