电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MA4TD4136T

产品描述0MHz - 1000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
产品类别无线/射频/通信    射频和微波   
文件大小42KB,共4页
制造商TE Connectivity(泰科)
官网地址http://www.te.com
下载文档 详细参数 选型对比 全文预览

MA4TD4136T概述

0MHz - 1000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

MA4TD4136T规格参数

参数名称属性值
厂商名称TE Connectivity(泰科)
Reach Compliance Codeunknown
特性阻抗50 Ω
构造COMPONENT
最大输入功率 (CW)13 dBm
最大工作频率1000 MHz
最小工作频率
射频/微波设备类型WIDE BAND LOW POWER
最大电压驻波比1.5
Base Number Matches1

文档预览

下载PDF文档
Silicon Bipolar MMIC
Cascadable Amplifier
Cascadable 50Ω Gain Block
3dB Bandwidth: DC to 1.0 GHz
15.0 dB Typical Gain @ 0.5 GHz
Unconditionally Stable (k>1)
3.3 Volt Operation
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
MA4TD4135, MA4TD4136
V3.00
Features
Ceramic Microstrip Case Style
4
.085
2,16
Outlines
1,2,3
Available in short lead version as MA4TD4136.
GND
RF INPUT
1
RF OUT
AND BIAS
3
.020
0,508
Description
M/A-COM's MA4TD4135 and MA4TD4136 are high
performance silicon bipolar MMICs housed in a cost effective
ceramic microstrip packages. The MA4TD4135 and
MA4TD4136 are designed for use where a general purpose
50Ω gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial and
military applications.
The MA4TD4135 and MA4TD4136 are fabricated using a 10
GHz fT silicon bipolar technology that features gold
metalization and IC passivation for increased performance
and reliability.
TYPICAL POWER GAIN vs FREQUENCY
18
16
14
GAIN (dB)
12
10
8
6
GAIN FLAT to DC
4
0.1
1
FREQUENCY (GHz)
10
Id=35mA
2
GND
.100
2,54
ø .083
2,11
.057
1,45
.455 ±.030
11,54 ±0,76
0.180 ±0.010
4,57 ±0,25 MA4TD4136
.022
0,56
.006 ±.002
0,15 ±0,05
MA4TD4135
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±.005;
mm .xx =
±.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
Pin Description
1
RF Input
2&4
AC/DC Ground
3
RF Output and DC Bias
Electrical Specifications @ T
A
= +25°C, Id = 35 mA, Z0 = 50Ω
Symbol
Gp
∆Gp
f3 dB
SWRin
SWRout
P1dB
NF
IP3
tD
Vd
dV/dT
Parameters
Power Gain (S21
2)
Gain Flatness
3 dB Bandwidth
Input SWR
Output SWR
Output Power @ 1dB Gain Compression
50
Noise Figure
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
Test Conditions
f = 0.1 GHz
f = 0.1 to 0.9 GHz
-
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
-
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
15.5
-
-
-
-
-
-
-
-
2.8
-
Typ.
16.0
+ 1.0
1.2
1.5
1.5
8.5
4.2
19.0
200
3.3
-5.0
Max.
17.0
-
-
-
-
-
-
-
-
3.7
-
Specifications Subject to Change Without Notice
M/A-COM Inc.
North America: Tel. (800) 366-2266
Fax (800) 618-8883
Asia/Pacific:
Tel. +85 2 2111 8088
Fax +85 2 2111 8087
Europe:
Tel. +44 (1344) 869-595
Fax +44 (1344) 300-020

MA4TD4136T相似产品对比

MA4TD4136T MA4TD4136 MA4TD4135T MA4TD4135
描述 0MHz - 1000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0MHz - 1000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0MHz - 1000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0MHz - 1000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
厂商名称 TE Connectivity(泰科) TE Connectivity(泰科) TE Connectivity(泰科) TE Connectivity(泰科)
Reach Compliance Code unknown unknown unknown unknown
特性阻抗 50 Ω 50 Ω 50 Ω 50 Ω
构造 COMPONENT COMPONENT COMPONENT COMPONENT
最大输入功率 (CW) 13 dBm 13 dBm 13 dBm 13 dBm
最大工作频率 1000 MHz 1000 MHz 1000 MHz 1000 MHz
射频/微波设备类型 WIDE BAND LOW POWER WIDE BAND LOW POWER WIDE BAND LOW POWER WIDE BAND LOW POWER
最大电压驻波比 1.5 1.5 1.5 1.5

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1483  587  1499  1233  1074  25  19  40  43  36 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved