CHEMSENSE DETECTORS
Mid IR Detector: 1 - 2.4µm
2.2PD1M
The 2.2PD series of detectors is based on GaInAsSb/GaAlAsSb heterostructure
technology. Spectral sensitivity lies between 1 and 2.4
µm,
and peak response of 1
A/W occurs at about 2.2µm. Operation can be photovoltaic or photoconductive, and
pulsed or CW. Price/performance compared to extended wavelength InGaAs is
superior due to the high shunt resistance and low price. Standard packaging includes
TO-18 and TO-5 headers.
Features
High Shunt Resistance
Pulsed or CW
Photovoltaic or Photoconductive
Device Characteristics
Parameters @ 25
o
C
Active area diameter
Peak Wavelength
Detectivity
Rise & Fall Time ( 50 Ohm, 0.0 V )
Long-wavelength detector cut-off
Short-wavelength detector cut-off
Dark Current @ -1.0V
Responsivity
Shunt Resistance
Capacitance @ 0.0V
Operating Temperature
Package
Value
1.0
2.0 - 2.2
( 3 - 5 )E10
40-80
2.40 +- 0.02
0.9 - 1.0
10-20
0.9 - 1.1
2-10
400-800
+25
TO-5
Units
mm
µm
cm-Hz
1/2
/W
ns
µm
µm
A/W
kOhms
pF
o
µA
C
829 Flynn Road, Camarillo, CA 93012
tel (805) 445-4500
fax (805) 445-4502.