PD-94038B
IRF5NJ9540
HEXFET
®
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
100V, P-CHANNEL
Product Summary
Part Number
IRF5NJ9540
BV
DSS
-100V
RDS(on)
0.117
I
D
-18A
SMD-0.5
Description
Fifth Generation HEXFET® power MOSFETs from IR HiRel
utilize advanced processing techniques to achieve the lowest
possible on-resistance per silicon unit area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device for
use in a wide variety of applications.
These devices are well-suited for applications such as
switching power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits.
Features
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Hermetically Sealed
Surface Mount
Light Weight
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= -10V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
-18
-11
-72
75
0.6
±20
260
-11
7.5
4.1
-55 to + 150
300 (for 5s)
1.0 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Package Mounting Surface Temp
Weight
I
D2
@ V
GS
= -10V, T
C
= 100°C Continuous Drain Current
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2019-03-08
IRF5NJ9540
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-100 ––– –––
––– -0.104 –––
–––
-2.0
5.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.117
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
1340
428
246
-4.0
–––
-25
-250
-100
100
109
19
53
29
135
87
84
–––
–––
–––
–––
V
V/°C
V
S
µA
nA
nC
Test Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1.0mA
V
GS
= -10V, I
D2
= -11A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -15V, I
D2
= -11A
V
DS
= -80V, V
GS
= 0V
V
DS
= -80V,V
GS
= 0V,T
J
=125°C
V
GS
= -20V
V
GS
= 20V
I
D2
= -11A
V
DS
= -80V
V
GS
= -10V
V
DD
= -50V
I
D2
= -11A
R
G
= 5.1
V
GS
= -10V
Measured from center of Drain
pad to center of Source pad
ns
nH
V
GS
= 0V
pF
V
DS
= -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-18
-72
-1.6
220
1200
A
V
ns
nC
Test Conditions
T
J
=25°C, I
S
= -18A, V
GS
=0V
T
J
=25°C, I
F
= -11A,V
DD
≤
-50V
di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Symbol
R
JC
Junction-to-Case
Parameter
Min.
–––
Typ.
–––
Max.
1.67
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= -25V, starting T
J
= 25°C, L = 4.3mH, Peak I
L
= -11A, V
GS
= -10V, R
G
= 25Ω
V
I
SD
-11A, di/dt
-360A/µs, V
DD
-100V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
2
International Rectifier HiRel Products, Inc.
2019-03-08
IRF5NJ9540
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs.
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
3
Internation-
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
2019-03-08
IRF5NJ9540
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area
Fig 9.
Maximum Drain Current Vs.Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
International Rectifier HiRel Products, Inc.
2019-03-08
IRF5NJ9540
Fig 12a.
Unclamped Inductive Test Circuit
Fig 12b.
Unclamped Inductive Waveforms
Fig 13a.
Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit
Fig 14a.
Switching Time Test Circuit
5
Fig 14b.
Switching Time Waveforms
2019-03-08
International Rectifier HiRel Products, Inc.
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