RF Power Field Effect Transistor
LDMOS, 2110 — 2170 MHz, 30W, 28V
4/6/2005
Preliminary
MAPLST2122-030CF
Features
Designed for W-CDMA base station
applications in the 2.1 to 2.2 GHz Frequency
Band. Suitable for TDMA, CDMA, and
multicarrier power amplifier applications.
30W Output Power at P
1dB
(CW)
12dB Minimum Gain at P
1dB
(CW)
W-CDMA Typical Performance:
(28V
DC
, -45dBc ACPR @ 4.096MHz)
Output Power: 4.5W (typ.)
Gain: 12dB (typ.)
Efficiency: 16% (typ.)
10:1 VSWR Ruggedness (CW @ 30W,
28V, 2110MHz)
Package Style
MAPLST2122-030CF
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ T
C
= 25 °C
Storage Temperature
Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
STG
T
J
Rating
65
20
97
-40 to +150
+200
Units
V
dc
V
dc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
ΘJC
Max
1.8
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.
RF Power LDMOS Transistor, 2110 — 2170 MHz, 30W, 28V
MAPLST2122-030CF
4/6/2005
Preliminary
Characteristic
DC CHARACTERISTICS @ 25ºC
Characteristic
Drain-Source Breakdown Voltage
OFF
(V
GS
= 0 Vdc, I
D
= 20 µAdc)
CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
28
(V
DS
= 65 Vdc, V
GS
= 0)
DS
GS
Gate—Source Leakage Leakage
Zero Gate Voltage DrainCurrent Current
(V
GS
= 5 Vdc, V
(V
DS
= 26Vdc, V
DS
==0)
0)
GS
Gate Threshold Voltage
Gate—Source Leakage Current
(V
DS
= 10 Vdc, I
D
= 1 mA)
(V
GS
= 5 Vdc, V
DS
= 0)
Gate Quiescent Voltage
ON CHARACTERISTICS
mA)
(V
DS
= 28 Vdc, I
D
= 250
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1 A)
Forward Transconductance
(V
GS
= 10 Vdc, I
D
= 1 A)
DYNAMIC CHARACTERISTICS @ 25ºC
Input Capacitance (Including Input Matching
DYNAMIC CHARACTERISTICS (1)
Capacitor in Package)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer
TESTS (In
FUNCTIONAL
Capacitance
M/A-COM Test Fixture) (2)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
(V
DS
= 28 Vdc, P
OUT
= 30 W PEP, I
DQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Two-Tone Drain Efficiency
(V
DS
= 28 Vdc, P
OUT
= 30 W PEP, I
DQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
(V
DS
= 28 Vdc, P
OUT
= 30 W PEP, I
DQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Input Return Loss
(V
DS
= 28 Vdc, P
OUT
= 30 W PEP, I
DQ
= 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
(V
DS
= 28 Vdc, P
OUT
= 30 W PEP, I
DQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Drain Efficiency
(V
DS
= 28 Vdc, P
OUT
= 30 W PEP, I
DQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
(V
DS
= 28 Vdc, P
OUT
= 30 W PEP, I
DQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
(V
DS
= 28 Vdc, P
OUT
= 30 W PEP, I
DQ
= 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Output VSWR Tolerance
(V
DD
= 28 Vdc, P
OUT
= 30 W, I
DQ
= 250 mA, f = 2110 MHz,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
G
ps
—
12.5
—
dB
C
iss
C
oss
C
rss
—
—
—
90
32.5
1.5
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
Symbol
V
(BR)DSS
I
DSS
I
DSS
I
GSS
I
DSS
V
GS(th)
I
GSS
V
DS(Q)
V
DS(on)
Gm
Min
65
—
—
—
—
—
2
2
—
—
Typ
—
—
—
—
—
—
—
—
0.2
1.2
Max
—
101
11
1
4
Unit
Vdc
µAdc
µAdc
µAdc
µAdc
Vdc
µAdc
Vdc
Vdc
S
4.5
—
—
EFF (ŋ)
—
36
—
%
IMD
—
-30
-28
dBc
IRL
—
-12
—
dB
G
ps
—
12.5
—
dB
EFF (ŋ)
—
36
—
%
IMD
—
-30
-28
dBc
IRL
—
-12
-9
dB
Ψ
No Degradation In Output Power
Before and After Test
2
RF Power LDMOS Transistor, 2110 — 2170 MHz, 30W, 28V
MAPLST2122-030CF
4/6/2005
Preliminary
C1,C6
Tantalum Electrolytic Surface Mt. Cap., 22 µF
C2,C7
Ceramic Chip Capacitor, 0.1 µF
C3,C8
Ceramic Chip Capacitor, 1000 pF
C4,C5,C9,C10
Chip Capacitor, 8.2 pF ATC100B
C11
Chip Capacitor, 0.5 pF ATC100B
C12
Chip Capacitor, 1.2 pF ATC100B
Z1-Z9
Distributed Microstrip Element
J1,J2
SMA Connector, Omni Spectra 2052-5636-02
L1
Inductor, 8 nH, CoilCraft A03T
L2
Inductor, 18.5 nH, CoilCraft A05T
P1,P2
Connector, AMP 640457-4
Q1
Transistor, MAPLST2122-030CF
R1
Chip Resistor (0805), 100k Ohm
R2
Chip Resistor (0805), 10K Ohm
PC Board (74350132-01), Arlon Woven Glass
Teflon .030” Thick, Er=2.54, 2 Oz Copper
Both Sides
Figure 1. 2110—2170 MHz Test Fixture Schematic
Figure 2. 2110—2170 MHz Test Fixture Component Layout
3
RF Power LDMOS Transistor, 2110 — 2170 MHz, 30W, 28V
MAPLST2122-030CF
4/6/2005
Preliminary
14.0
13.5
13.0
20
V
DD
= 28, f = 2.17GHz,
I
DQ
= 350mA
Gain (dB)
12.5
12.0
11.5
11.0
10.5
10.0
26
28
30
32
34
36
0
5
10
P
OUT
(dBm) avg.
Graph 1. W-CDMA: Power Gain and Drain Efficiency vs. Output Power
-30
-35
-40
V
DD
= 28, f = 2.17GHz,
I
DQ
= 350mA
ACPR (dBc)
-45
-50
-55
-60
-65
25 26 27 28 29 30 31 32 33 34 35 36 37
P
OUT
(dBm) avg.
Graph 2. W-CDMA: Adjacent Channel Power Ratio vs. Output Power
4
Efficiency (%)
15
RF Power LDMOS Transistor, 2110 — 2170 MHz, 30W, 28V
MAPLST2122-030CF
4/6/2005
Preliminary
Package Dimensions
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice. M/A-COM makes no warranty,
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
5
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Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
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