DI, DE, RE, RO pins:.............................................................±8KV
NOTE:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only.
Functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SPECIFIED OPERATING CONDITIONS
PARAMETERS
Supply Voltage
Temperature
TX Common-Mode Bus Loading
RX Input Common-Mode Voltage
Differential Load Resistance
Differential Load Capacitance
Digital Input High Voltage
Digital Input Low Voltage
Digital Input Current high
Digital Input Pull-Down Current
Digital Input Current low
Digital Input Pull-Up Current
SYMBOL
V
DD
T
V
OCM
V
ICM
R
L
C
L
V
IH
V
IL
I
IH
I
PD
I
IL
I
PU
See Figure 4
Half-Duplex
__
DE, DI, RE
__
DE, DI, RE
DE, DI, V
IH
= V
DD
__
RE, V
IH
= V
DD
__
RE, V
IH
= 0
DE, DI, V
IH
= 0V
CONDITIONS
LIMITS
MIN
3.0
-55
-7
-16
54
70
30
1
6
-1
-18
18
-6
60
100
TYP
3.3 / 5.0
MAX
5.5
125
12
20
UNIT
V
˚C
V
V
Ω
pF
%V
DD
%V
DD
μA
μA
μA
μA
∞
DRIVER DC ELECTRICAL CHARACTERISTICS
VDD = 3.0V to 3.6V or 4.5V to 5.5V; T = -55˚C to 125˚C; MIN and MAX values are at range boundaries
PARAMETER
Differential Output Voltage with
no load
Differential Output Voltage into load
with no common-mode voltage
Differential Output Voltage into load
with applied common-mode voltage
Differential Output Over/Under Shoot
Change in Differential Output
Voltage between logic states
Output Common-Mode Voltage
Change in output Common-Mode
Voltage between logic states
Bus Pin Leakage Current
(High-Z Power On)
Bus Pin Leakage Current (Power Off)
Peak Short Circuit Current
Steady State Short Circuit Current
Differential Output Capacitance
Static Supply Current
Supply Current (Shutdown)
SYMBOL
|V
OD1
|
|V
OD2
|
|V
OD3
|
CONDITIONS
R
L
=
∞
R
L
= 54Ω, C
L
= 50pF
-7V
≤
V
OCM
≤
12V
T
A
= 25ºC
FIGURE
3
3
4
VDD = 3.3V ± 10%
MIN
V
DD
-0.1
1.5
1.5
TYP
MAX
V
DD
3.0
3.0
5.5
VDD = 5.0V ± 10%
MIN
V
DD
-0.1
2.45
2.45
TYP
MAX
V
DD
4.0
4.0
3.2
-125
2.15
-150
-200
-200
-250
0
10
125
2.45
125
3.0
150
200
200
250
50
16
12
400
UNIT
V
V
V
%V
OD
mV
V
mV
μA
μA
mA
μA
pF
mA
μA
∆V
OD
V
OCM
∆V
OCM
I
OHZ1
I
OHZ2
I
SCPK
I
SC
C
OD
I
DD
I
DDQ
R
L
= 54Ω, C
L
= 50pF
R
L
= 54Ω, C
L
= 50pF
R
L
= 54Ω, C
L
= 50pF
DE=0, -15V≤ VOCM
≤
15V
DE=0, -12V≤ VOCM
≤
15V
V
OCM
= ±15V
DE = V
DD
, Bus Pin = ±15
DE = V
DD
, Bus Pin = ±15
DE = 0
DE=V
DD
, RE=0, R
L
=∞
DE=0, RE=V
DD
, R
L
=∞
3
4
4
-125
1.40
-125
-200
-200
-230
0
8
90
1.60
125
2.0
125
200
200
230
50
16
10
110
HOLT INTEGRATED CIRCUITS
3
HI-4853
HI-4850
DRIVER SWITCHING CHARACTERISTICS
VDD = 3.0V - 3.6V or 4.5V - 5.5V as noted , Operating temperature range.
PARAMETER
Propagation Delay Low - to - High
Propagation Delay High - to - Low
Differential Rise Time
Differential Fall Time
Output Pulse Skew
Driver Enable to Output High
Driver Enable to output Low
Driver Disable from Output High
Driver Disable from Output Low
Shutdown to Active Output Delay
Shutdown Delay
SYMBOL
t
PDR
t
PDF
t
r
t
f
t
MSK
t
ZH
t
ZL
t
HZ
t
LZ
t
ON
t
OFF
CONDITIONS
R
L =
54
.
C
L
=50pF
R
L =
54
,
C
L
=50pF
R
L =
54
,
C
L
=50pF
R
L =
54
,
C
L
=50pF
R
L =
54
,
C
L
=50pF
R
L =
500
,
C
L
=50pF
R
L =
500
,
C
L
=50pF
R
L =
500
,
C
L
=50pF
R
L =
500
,
C
L
=50pF
R
L =
500
,
C
L
=50pF
FIGURE
5&6
5&6
5&6
5&6
5&6
7
7
7
7
7
8
VDD = 3.3V ± 10%
MIN
110
17
110
17
90
9
TYP
145
26
145
26
105
12
MAX
VDD = 5.0V ± 10%
MIN
TYP
MAX
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
33
200
200
33
120
15
16
108
108
16
115
8
24
150
24
150
11
135
11
135
2
90
90
18
18
30
205
30
205
16
155
16
125
8
117
117
30
30
10
10
9
90
12
105
2
95
95
20
20
15
120
8
120
120
33
33
10
10
8
115
RECEIVER DC ELECTRICAL CHARACTERISTICS
VDD = 3.0V - 3.6V or 4.5V - 5.5V as noted , Operating temperature range.
PARAMETER
Differential Input Threshold Voltage
Input Hysteresis
Input Resistance
RO Output High Level
RO Output Low Level
RO Output Hi-Z Leakage Current
SYMBOL
V
TH
V
HYS
R
IN
V
OH
V
OL
I
OZH
CONDITIONS
-15V
≤
V
ICM
≤
+15V
≤
-15
≤
V
ICM
≤
+20
-12V
≤
V
ICM
≤
+15V
≤
V
ICM
= 0V
V
DD
-20V
≤
V
ICM
+20
+15V
≤
-15
≤
V
ICM
≤
≤
-12V
≤
V
ICM
≤
+15V
≤
V
ICM
= +200mV
V
ID
= +200mV
OUT
= -5.0mA
I
I
OUT
= -3.0mA
V
ICM
= -200mV
V
ID
= -200mV
I
OUT
=
=
+3.0mA
5.0mA
I
OUT
FIGURE
VDD = 3.3V ± 10%
MIN
TYP
MAX
VDD = 5.0V ± 10%
MIN
-200
TYP
-100
28
25
MAX
-50
33
30
UNIT
mV
mV
mV
K
K
V
DD
-200
17
20
-100
28
25
-50
33
30
17
20
80
80
90%
10%
-1
1
-1
92
90%
92
10%
1
V
DD
µA
0V
≤
V
RO
≤
V
DD
≤
RECEIVER SWITCHING CHARACTERISTICS
VDD = 3.0V - 3.6V or 4.5V - 5.5V as noted , Operating temperature range.
PARAMETER
Propagation Delay Low - to - High
Propagation Delay High - to - Low
RO Output Rise Time
RO Output Fall Time
Output Pulse Skew
Receiver Enable to RO Output High
Receiver Enable to output Low
Receiver Disable from Output High
Receiver Disable from Output Low
Shutdown to RO Active Output Delay
Shutdown Delay to RO HiZ
SYMBOL
t
RPDR
t
RPDF
t
Rr
t
Rf
t
RMSK
t
RZH
t
RZL
t
RHZ
t
RLZ
t
RON
t
ROFF
CONDITIONS
V
ID =
+1.5V, C
L
=15pF
V
ID =
-1.5V
,
C
L
=15pF
V
ID =
+1.5V, C
L
=15pF
V
ID =
-1.5V
,
C
L
=15pF
V
ID =
+1.5V, C
L
=15pF
R
L
= 1K
,
C
L
=15pF
R
L
= 1K
,
C
L
=15pF
R
L
= 1K
,
C
L
=15pF
R
L
= 1K
,
C
L
=15pF
R
L
= 1K
,
C
L
=15pF
R
L
= 1K
,
C
L
=15pF
FIGURE
9
8
9
8
9
8
VDD = 3.3V ± 10%
MIN
20
20
1.1
1.1
TYP
26
26
1.9
1.9
0.8
12
12
6
6
60
MAX
32
32
3.3
3.3
1.6
16
16
10
10
5
100
VDD = 5.0V ± 10%
MIN
20
20
1.1
1.1
TYP
26
26
1.9
1.9
0.8
12
12
6
6
60
MAX
32
32
3.3
3.3
1.6
16
16
10
10
5
100
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
8
9
9
8
7
9
7
9
7
9
9
7
7
9
9
7
HOLT
INTEGRATED CIRCUITS
INTEGRATED CIRCUITS
4
HI-4853
TEST CIRCUITS
DE
+
AY
DI
TX
BZ
|V
OD
|
50pF
54Ω
-
Figure 3 - Driver DC Characteristics ( V
OD1
, V
OD2
, and
∆V
OD
)
DE
DE
+
AY
DI
TX
BZ
|V
OD3
|
50pF
27Ω
VOCM
27Ω
DI
TX
+
AY
|V
OD3
|
BZ
60Ω
375Ω
375Ω
-
-
V
OCM
Figure 4 - Driver DC Characteristics with and without Common-Mode Loading ( V
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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