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HSMS-8202-TR2G

产品描述Mixer Diode, X Band to KU Band, Silicon, LEAD FREE, PLASTIC PACKAGE-3
产品类别分立半导体    二极管   
文件大小105KB,共6页
制造商HP(Keysight)
官网地址http://www.semiconductor.agilent.com/
标准
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HSMS-8202-TR2G概述

Mixer Diode, X Band to KU Band, Silicon, LEAD FREE, PLASTIC PACKAGE-3

HSMS-8202-TR2G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称HP(Keysight)
包装说明R-PDSO-G3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
配置SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大二极管电容0.26 pF
二极管元件材料SILICON
二极管类型MIXER DIODE
频带X BAND TO KU BAND
JESD-30 代码R-PDSO-G3
JESD-609代码e3
元件数量2
端子数量3
最大工作频率14 GHz
最小工作频率10 GHz
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
表面贴装YES
技术SCHOTTKY
端子面层MATTE TIN
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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Agilent HSMS-8101, 8202, 8207,
8209 Surface Mount Microwave
Schottky Mixer Diodes
Data Sheet
Features
• Optimized for use at
10-14 GHz
• Low Capacitance
• Low Conversion Loss
Description/Applications
These low cost microwave
Schottky diodes are specifically
designed for use at X/Ku-bands
and are ideal for DBS and VSAT
downconverter applications. They
are available in SOT-23 and
SOT-143 standard package
configurations.
Note that Agilent's manufacturing
techniques assure that dice found in
pairs and quads are taken from
adjacent sites on the wafer, assur-
ing the highest degree of match.
Plastic SOT-23 Package
• Low RD
• Low Cost Surface Mount
Plastic Package
• Lead-free Option Available
Plastic SOT-143 Package
Package Lead Code
Identification
(Top View)
SINGLE
3
SERIES
3
1
#1
2
1
#2
2
Absolute Maximum Ratings , T
A
= +25°C
Symbol Parameter
P
T
P
IV
T
J
T
STG
, T
op
Total Device Dissipation
[2]
Peak Inverse Voltage
Junction Temperature
Storage and Operating
Temperature
Unit
mW
V
°C
°C
Min.
-65
Max.
75
4
+150
+150
[1]
RING
QUAD
3
4
CROSS-OVER
QUAD
3
4
1
#7
2
1
#9
2
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. Measured in an infinite heat sink at T
CASE
= 25°C. Derate linearly to
zero at 150°C per diode.
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.

 
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