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PN3643L34Z

产品描述Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
产品类别分立半导体    晶体管   
文件大小293KB,共7页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
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PN3643L34Z概述

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

PN3643L34Z规格参数

参数名称属性值
厂商名称Fairchild
包装说明CYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)0.5 A
集电极-发射极最大电压30 V
配置SINGLE
最小直流电流增益 (hFE)20
JEDEC-95代码TO-92
JESD-30 代码O-PBCY-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置BOTTOM
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

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PN3643
Discrete POWER & Signal
Technologies
PN3643
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30
60
5.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
PN3643
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation

 
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