GU-E PhotoMOS (AQV414E, AQV41
❍
EH)
VDE
TESTING
VDE
(AQV412EH)
(Standard type)
(AQV410EH, 414EH) (AQV410EH, 414EH)
(Reinforced type)
General use and
economy type.
DIP (1 Form B) 6-pin type.
Reinforced insulation
5,000V type.
8.8
.346
6.4
.252
3.9
.154
8.8
.346
6.4
.252
3.6
.142
GU-E PhotoMOS
(AQV414E,
AQV41
❍
EH)
5. High sensitivity, low ON resistance
Can control a maximum 0.13 A load
current with a 5 mA input current. Low
ON resistance of 18
Ω
(AQV410EH).
Stable operation because there are no
metallic contact parts.
6. Low-level off-state leakage current
The SSR has an off-state leakage current
of several milliamperes, whereas the
PhotoMOS relay has typ. 100 pA even
with the rated load voltage of 400 V
(AQV414E).
7. Reinforced insulation 5,000 V type
also available.
More than 0.4 mm internal insulation
distance between inputs and outputs.
Conforms to EN41003, EN60950
(reinforced insulation).
mm
inch
1
2
3
6
5
4
2. This is the low-cost version
PhotoMOS 1 Form B output type relay.
Compared to the previous GU
PhotoMOS 1 Form B type relay, the
attainment of an economical price that is
approximately 22% lower will further
broaden its market.
3. Normally closed type (2 Form B) is
low on-resistance.
(All AQ❍4 PhotoMOS are Form B
types. And also the Form A types have
a low on-resistance.)
This has been realized thanks to the
built-in MOSFET processed by our
proprietary method, DSD (Double-
diffused and Selective Doping) method.
Cross section of the normally-closed type of
power MOS
;;
;;;
;; ;
Passivation membrane
Intermediate
Source electrode Gate electrode
insulating
membrane
Gate
oxidation
membrane
;;
;;
N
+
P
+
N
+
N
+
P
+
N
+
N–
N
+
FEATURES
Item
TYPICAL APPLICATIONS
• Power supply
• Measuring equipment
• Security equipment
• Telephone equipment
• Sensors
1. 60V type couples high capacity
(0.55A) with low on-resistance (1Ω).
Part No.
Load voltage
Continuous
load current
ON resistance
(typ.)
GU-E
(1 Form B type) type
W
NE
AQV410EH AQV412EH
4. Controls low-level analog signals
350V
60V
0.13A
18Ω
0.55A
1Ω
Drain
electrode
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
TYPES
Type
Output rating*
I/O isolation
voltage
Load
voltage
400 V
Load
current
120 mA
Part No.
Through hole
terminal
Tube packing style
AQV414E
AQV414EA
Surface-mount terminal
Tape and reel packing style
Picked from the Picked from the
1/2/3-pin side
4/5/6-pin side
AQV414EAX
AQV414EAZ
Packing quantity
Tube
1 tube contains
50 pcs.
1 batch contains
500 pcs.
Tape and reel
60 V
550 mA AQV412EH
AQV412EHA AQV412EHAX AQV412EHAZ
350 V 130 mA AQV410EH
AQV410EHA AQV410EHAX AQV410EHAZ
400 V 120 mA AQV414EH
AQV414EHA AQV414EHAX AQV414EHAZ
*Indicate the peak AC and DC values.
Note: For space reasons, the SMD terminal shape indicator “A” and the package type indicator “X” and “Z” are omitted from the seal.
5,000 V AC
(Reinforced)
AC/DC
type
1,500 V AC
(Standard)
1,000 pcs.
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
GU-E PhotoMOS (AQV414E, AQV41
❍
EH)
RATING
1. Absolute maximum ratings (Ambient temperature: 25°C
77°F)
Item
LED forward current
LED reverse voltage
Peak forwrd current
Power dissipation
Load voltage (peak AC)
Continuous load current
Peak load current
Power dissipation
Total power dissipation
I/O isolation voltage
Temperature Operating
limits
Storage
Symbol
I
F
V
R
I
FP
P
in
V
L
I
L
I
peak
P
out
P
T
V
iso
T
opr
T
stg
A
B
C
Type of
connection
AQV414E(A)
AQV412EH(A) AQV410EH(A) AQV414EH(A)
Remarks
Input
50 mA
5V
1A
75 mW
400 V
0.12 A
0.13 A
0.15 A
0.3 A
60 V
0.55 A
0.65 A
0.8 A
1.5 A
350 V
0.13 A
0.15 A
0.17 A
0.4 A
400 V
0.12 A
0.13 A
0.15 A
0.3 A
f = 100 Hz, Duty factor = 0.1%
Output
A connection: Peak AC, DC
B,C connection: DC
A connection: 100 ms (1 shot),
V
L
= DC
1,500 V AC
500 mW
550 mW
5,000 V AC
Non-condensing at low
temperatures
–40°C to +85°C
–40°F to +185°F
–40°C to +100°C
–40°F to +212°F
Type of
Symbol connec-
tion
2. Electrical characteristics (Ambient temperature: 25
°
C
77
°
F)
Item
LED operate (OFF)
current
Input
LED reverse (ON)
current
LED dropout voltage
Typical
Maximum
Minimum
Typical
Typical
Maximum
Typical
Maximum
On resistance
Typical
Maximum
Typical
Maximum
Off state leakage
current
Switching
speed
Transfer
characteristics
Maximum
AQV414E(A)
AQV412EH(A) AQV410EH(A) AQV414EH(A)
Condition
I
L
= Max.
I
L
= Max.
I
F
= 50 mA
I
Foff
I
Fon
V
F
R
on
R
on
R
on
I
Leak
T
off
T
on
C
iso
R
iso
—
—
—
A
B
C
—
—
—
—
—
1.45 mA
0.3 mA
1.40 mA
1.9 mA
1.9 mA
3.0 mA
0.4 mA
0.4 mA
1.8 mA
1.8 mA
1.25 V (1.14 V at I
F
= 5 mA)
1.5 V
1
Ω
2.5
Ω
0.55
Ω
1.3
Ω
0.3
Ω
0.7
Ω
10
µ
A
3 ms
10 ms
0.3 ms
1.5 ms
0.8 pF
1.5 pF
1,000 M
Ω
18
Ω
35
Ω
13
Ω
17.5
Ω
6.5
Ω
8.8
Ω
10
µ
A
1.5 ms
3.0 ms
0.3 ms
1.5 ms
1.9 mA
0.4 mA
1.8 mA
26
Ω
50
Ω
20
Ω
25
Ω
10
Ω
12.5
Ω
1
µ
A
0.7 ms
2.0 ms
0.1 ms
1.0 ms
25.2
Ω
50
Ω
19
Ω
25
Ω
10
Ω
12.5
Ω
10
µ
A
1.3 ms
3.0 ms
0.3 ms
1.5 ms
Output
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
I
F
= 0 mA
I
L
= Max.
Within 1 s on time
I
F
= 5 mA
V
L
= Max.
I
F
= 0 mA
➝
5 mA
I
L
= Max.
I
F
= 5 mA
➝
0 mA
I
L
= Max.
f = 1 MHz
V
B
= 0 V
500 V DC
Typical
Operate
(OFF) time* Maximum
Reverse
(ON) time*
Typical
Maximum
Typical
Maximum
Minimum
I/O capacitance
Initial I/O isolation
resistance
Standard type I
F
= 5 mA
Reinforced type I
F
= 5 to 10 mA
*Operate/Reverse time
Input
Note: Recommendable LED forward current
Output
10%
90%
Toff
Ton
■
■
■
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
GU-E PhotoMOS (AQV414E, AQV41
❍
EH)
REFERENCE DATA
Allowable ambient temperature: –40°C to +85°C
–40°F to +185°F
Type of connection: A
140
120
Load current, mA
100
80
60
40
20
0
–40 –20
0
20
40
60
80 85 100
AQV410EH
Load current, mA
AQV414E(H)
1-(1). Load current vs. ambient temperature
characteristics
1-(2). Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40°C to +85°C
–40°F to +185°F
Type of connection: A
700
600
500
400
300
200
100
0
-40
-20
0
20
40
60
80 85 100
AQV412EH
2. On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 4 and 6;
LED current: 0 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
50
40
30
20
AQV410EH
10
0
AQV412EH
-40
-20
0
20 40
60 8085
Ambient temperature,
°C
On resistance,
Ω
AQV414E(H)
Ambient temperature,
°C
Ambient temperature,
°C
3. Operate (OFF) time vs. ambient temperature
characteristics
LED current: 5mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5.0
Operate (OFF) time, ms
4.0
3.0
2.0
AQV410EH•AQV414EH
AQV414E
4. Reverse (ON) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0.8
Reverse (ON) time, ms
5. LED operate (OFF) current vs. ambient
temperature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
LED operate (OFF) curremt, mA
5
4
3
2
1
0
AQV414E
AQV412EH
0.6
AQV410EH
AQV414EH
AQV412EH
AQV412EH•AQV410EH•AQV414EH
0.4
1.0
0
0.2
AQV414E
-40
-20
0
20
40
60
80 85
0
-40
-20
Ambient temperature,
°C
0
20 40
60
80 85
Ambient temperature,
°C
-40
-20
0
20
40
60
8085
Ambient temperature,
°C
6. LED reverse (ON) current vs. ambient
temperature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5
LED reverse (ON) current, mA
7. LED dropout voltage vs. ambient
temperature characteristics
Sample: All types;
LED current: 5 to 50 mA
1.5
LED dropout voltage, V
1.4
1.3
1.2
1.1
1.0
0
–40
–20
0
20
40
60
8-(1). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C
77°F
Current, mA
140
AQV410EH
120
100
AQV414EH
80
60
AQV414E
40
20
–3 –2.5 –2 –1.5 –1 –0.5
0.5 1 1.5 2 2.5 3
–20
Voltage, V
–40
–60
–80
–100
–120
–140
4
3
2
1
0
AQV414E
AQV412EH•AQV410EH•AQV414EH
50mA
30mA
20mA
10mA
5mA
-40
-20
0
20
40
60
80 85
80 85
Ambient temperature,
°C
Ambient temperature,
°C
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
GU-E PhotoMOS (AQV414E, AQV41❍EH)
8-(2). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C
77°F
0.6
Off state leakage current, A
10
–3
Operate (OFF) time, ms
8.0
6.0
4.0
AQV412EH
2.0
0
AQV414E
50
AQV410EH
AQV414EH
Current, A
0.4
0.2
0
0
-0.2
-0.4
10
–12
-0.6
0
20
40
60
80
Load voltage, V
100
10
20
30
40
0.5
Voltage, V
1
9. Off state leakage current vs. load voltage
characteristics
Sample: All types;
Measured portion: between terminals 4 and 6;
LED current: 5 mA; Ambient temperature: 25°C
77°F
10. Operate (OFF) time vs. LED forward
current characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C
77°F
10.0
-1
-0.5
AQV412EH
10
–6
AQV414EH
AQV410EH
10
–9
AQV412EH
AQV414E
LED forward current, mA
11. Reverse (ON) time vs. LED forward current
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C
77°F
0.5
0.4
0.3
0.2
AQV414E
0.1
AQV410EH,AQV414EH
AQV412EH
12. Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz;
Ambient temperature: 25°C
77°F
500
Output capacitance, pF
Reverse (ON) time, ms
400
300
AQV412EH
200
100
0
AQV410EH•AQV414EH•AQV414E
10
20
30
40
50
60
0
0
10
20
30
40
50
LED forward current, mA
60
Applied voltage, V
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
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