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IS61LP6436A-133TQ

产品描述64KX36 CACHE SRAM, 4ns, PQFP100, TQFP-100
产品类别存储    存储   
文件大小228KB,共17页
制造商Integrated Silicon Solution ( ISSI )
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IS61LP6436A-133TQ概述

64KX36 CACHE SRAM, 4ns, PQFP100, TQFP-100

IS61LP6436A-133TQ规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码QFP
包装说明TQFP-100
针数100
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
Factory Lead Time12 weeks
最长访问时间4 ns
其他特性PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)133 MHz
I/O 类型COMMON
JESD-30 代码R-PQFP-G100
JESD-609代码e0
长度20 mm
内存密度2359296 bit
内存集成电路类型CACHE SRAM
内存宽度36
湿度敏感等级3
功能数量1
端子数量100
字数65536 words
字数代码64000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织64KX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装等效代码QFP100,.63X.87
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)240
电源2.5/3.3,3.3 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.035 A
最小待机电流3.14 V
最大压摆率0.18 mA
最大供电电压 (Vsup)3.465 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
处于峰值回流温度下的最长时间10
宽度14 mm
Base Number Matches1

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IS61LP6436A
IS61LP6432A
64K x 32, 64K x 36 SYNCHRONOUS
PIPELINED STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Pentium™ or linear burst sequence control us-
ing MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP package
• Power-down snooze mode
• Power Supply:
+3.3V V
dd
+3.3V or 2.5V V
ddq
(I/O)
• Lead-free available
®
Long-term Support
World Class Quality
MAY 2017
DESCRIPTION
The
ISSI
IS61LP6432A/36A is a high-speed synchronous
static RAM designed to provide a burstable, high-perfor-
mance memory for high speed networking and communica-
tion applications. The IS61LP6432A is organized as 64K
words by 32 bits and the IS61LP6436A is organized as 64K
words by 36 bits. Fabricated with
ISSI
's advanced CMOS
technology, the device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit. All synchronous inputs pass
through registers controlled by a positive-edge-triggered
single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be writ-
ten.
BW1 controls DQa, BW2 controls DQb, BW3
controls
DQc, BW4 controls DQd, conditioned by BWE being LOW.
A LOW on GW input would cause all bytes to be written.
Bursts can be initiated with either ADSP (Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be gener-
ated internally and controlled by the
ADV
(burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW. Interleave
burst is achieved when this pin is tied HIGH or left floating.
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
-166
3.5
6
166
-133
4
7.5
133
Units
ns
ns
MHz
Copyright © 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex-
pected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon
Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.
Rev. C1
05/22/2017
1

IS61LP6436A-133TQ相似产品对比

IS61LP6436A-133TQ IS61LP6432A-133TQLI IS61LP6432A-133TQ IS61LP6436A-133TQLI
描述 64KX36 CACHE SRAM, 4ns, PQFP100, TQFP-100 Cache SRAM, 64KX32, 4ns, CMOS, PQFP100, LEAD FREE, TQFP-100 64KX32 CACHE SRAM, 4ns, PQFP100, TQFP-100 Cache SRAM, 64KX36, 4ns, CMOS, PQFP100, LEAD FREE, TQFP-100
是否无铅 含铅 不含铅 含铅 不含铅
是否Rohs认证 不符合 符合 不符合 符合
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
零件包装代码 QFP QFP QFP QFP
包装说明 TQFP-100 LQFP, QFP100,.63X.87 TQFP-100 LQFP, QFP100,.63X.87
针数 100 100 100 100
Reach Compliance Code compliant compli compliant compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Factory Lead Time 12 weeks 10 weeks 12 weeks 10 weeks
最长访问时间 4 ns 4 ns 4 ns 4 ns
其他特性 PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
最大时钟频率 (fCLK) 133 MHz 133 MHz 133 MHz 133 MHz
I/O 类型 COMMON COMMON COMMON COMMON
JESD-30 代码 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
JESD-609代码 e0 e3 e0 e3
长度 20 mm 20 mm 20 mm 20 mm
内存密度 2359296 bit 2097152 bi 2097152 bit 2359296 bit
内存集成电路类型 CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM
内存宽度 36 32 32 36
功能数量 1 1 1 1
端子数量 100 100 100 100
字数 65536 words 65536 words 65536 words 65536 words
字数代码 64000 64000 64000 64000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 85 °C 70 °C 85 °C
组织 64KX36 64KX32 64KX32 64KX36
输出特性 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LQFP LQFP LQFP LQFP
封装等效代码 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 240 260 NOT SPECIFIED 260
电源 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 1.6 mm
最大待机电流 0.035 A 0.04 A 0.035 A 0.04 A
最小待机电流 3.14 V 3.14 V 3.14 V 3.14 V
最大压摆率 0.18 mA 0.19 mA 0.18 mA 0.19 mA
最大供电电压 (Vsup) 3.465 V 3.465 V 3.465 V 3.465 V
最小供电电压 (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
端子面层 Tin/Lead (Sn/Pb) Matte Tin (Sn) - annealed Tin/Lead (Sn/Pb) Matte Tin (Sn) - annealed
端子形式 GULL WING GULL WING GULL WING GULL WING
端子节距 0.65 mm 0.65 mm 0.65 mm 0.65 mm
端子位置 QUAD QUAD QUAD QUAD
处于峰值回流温度下的最长时间 10 40 NOT SPECIFIED 40
宽度 14 mm 14 mm 14 mm 14 mm
Base Number Matches 1 1 1 1
湿度敏感等级 3 3 - 3
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