GB10MPS17-247
V
RRM
I
F (Tc
≤
150°C)
Q
C
Package
RoHS Compliant
Silicon Carbide Power
Schottky Diode
Features
High Avalanche (UIS) Capability
Enhanced Surge Current Capability
175 °C Maximum Operating Temperature
Temperature Independent Switching Behavior
Positive Temperature Coefficient Of V
F
Extremely Fast Switching Speeds
Superior Figure of Merit Q
C
/I
F
=
=
=
1700 V
10 A
31 nC
100% UIS Tested
1
TO – 247
Applications
2
Advantages
Low Standby Power Losses
Improved Circuit Efficiency (Lower Overall Cost)
Low Switching Losses
Ease of Paralleling Devices without Thermal Runaway
Smaller Heat Sink Requirements
Low Reverse Recovery Current
Low Device Capacitance
Low Reverse Leakage Current at Operating Temperature
Power Factor Correction (PFC)
Switched-Mode Power Supply (SMPS)
Solar Inverters
Wind Turbine Inverters
Motor Drives
Induction Heating
Uninterruptible Power Supply (UPS)
High Voltage Multipliers
Absolute Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
Continuous Forward Current
Continuous Forward Current
RMS Forward Current
Surge Non-Repetitive Forward Current, Half Sine
Wave
Non-Repetitive Peak Forward Current
I t Value
Non-Repetitive Avalanche Energy
Power Dissipation
Operating and Storage Temperature
2
Symbol
V
RRM
I
F
I
F
I
F(RMS)
I
F,SM
I
F,max
∫i dt
E
AS
P
tot
T
j
, T
stg
2
Conditions
T
C
= 25 °C
T
C
≤ 150 °C
T
C
≤ 150 °C
T
C
= 25 °C, t
P
= 10 ms
T
C
= 150 °C, t
P
= 10 ms
T
C
= 25 °C, t
P
= 10 µs
T
C
= 25 °C, t
P
= 10 ms
T
C
= 150 °C, t
P
= 10 ms
L = 5 mH, I
AV
> 6 A, V
DD
= 60 V
T
C
= 25 °C
Values
1700
25
10
17
65
55
280
21
15
150
190
-55 to 175
Unit
V
A
A
A
A
A
As
mJ
W
°C
2
Electrical Characteristics
Parameter
Diode Forward Voltage
Reverse Current
Total Capacitive Charge
Switching Time
Total Capacitance
Symbol
V
F
I
R
Q
C
t
s
C
Conditions
I
F
= 10 A, T
j
= 25 °C
I
F
= 10 A, T
j
= 175 °C
V
R
= 1700 V, T
j
= 25 °C
V
R
= 1700 V, T
j
= 175 °C
V
R
= 400 V
I
F
≤ I
F,MAX
V
R
= 960 V
dI
F
/dt = 200 A/μs
V
R
= 400 V
T
j
= 175 °C
V
R
= 960 V
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
V
R
= 400 V, f = 1 MHz, T
j
= 25 °C
V
R
= 1000 V, f = 1 MHz, T
j
= 25 °C
min.
Values
typ.
1.45
2.1
5
30
31
52
< 25
490
45
33
max.
1.7
2.6
20
100
Unit
V
µA
nC
ns
pF
Thermal / Mechanical Characteristics
Thermal Resistance, Junction - Case
Mounting Torque
R
thJC
M
0.8
0.6
°C/W
Nm
June 2016
Latest version of this datasheet at:
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
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GB10MPS17-247
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Power Derating Curve
Figure 4: Current Derating Curves (D = t
P
/T, t
P
= 400 µs)
(Considering worst case Z
th
conditions )
Figure 5: Typical Junction Capacitance vs Reverse Voltage
Characteristics
Figure 6: Typical Capacitive Energy vs Reverse Voltage
Characteristics
June 2016
Latest version of this datasheet at:
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
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GB10MPS17-247
Figure 7: Current vs Pulse Duration Curves at T
C
= 150 °C
Figure 8: Transient Thermal Impedance
Package Dimensions:
TO-247
PACKAGE OUTLINE
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
June 2016
Latest version of this datasheet at:
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
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Revision History
Date
2016/06/16
Revision
0
Comments
Initial release
GB10MPS17-247
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
June 2016
Latest version of this datasheet at:
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
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GB10MPS17-247
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/products_sic/rectifiers/GB10MPS17-247_SPICE.pdf)
into
LTSPICE (version 4) software for simulation of the GB10MPS17-247.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.0
$
*
$Date:
16-JUNE-2016
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2016 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated diode current.
*
* Start of GB10MPS17-247 SPICE Model
*
.SUBCKT GB10MPS17 ANODE KATHODE
D1 ANODE KATHODE GB10MPS17_SCHOTTKY
D2 ANODE KATHODE GB10MPS17_PIN
.MODEL GB10MPS17_SCHOTTKY D
+ IS
4.55E-15
RS
0.053
+ N
1
IKF
1000
+ EG
1.2
XTI
-2
+ TRS1
0.0054347826
TRS2
2.71739E-05
+ CJO
6.40E-10
VJ
0.469
+ M
1.508
FC
0.5
+ TT
1.00E-10
BV
1700
+ IBV
1.00E-03
VPK
1700
+ IAVE
10
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semi
.MODEL GB10MPS17_PIN D
+ IS
1.54E-22
RS
0.19
+ TRS1
-0.004
N
3.941
+ EG
3.23
IKF
19
+ XTI
0
FC
0.5
+ TT
0
BV
1700
+ IBV
1.00E-03
VPK
1700
+ IAVE
10
TYPE
SiC_PiN
.ENDS
* End of GB10MPS17-247 SPICE Model
June 2016
Latest version of this datasheet at:
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
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