IRGP6660DPbF
IRGP6660D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 600V
I
C
= 60A, T
C
=100°C
t
SC
≥
5µs, T
J(max)
= 175°C
V
CE(ON)
typ. = 1.7V @ I
C
= 48A
Applications
• Welding
• H Bridge Converters
G
C
C
C
G
E
C
E
G
C
E
n-channel
G
Gate
IRGP6660DPbF
TO-247AC
C
Collector
IRGP6660D-EPbF
TO-247AD
E
Emitter
Features
Low V
CE(ON)
and switching losses
Optimized diode for full bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C
5µs short circuit SOA
Positive V
CE (ON)
temperature coefficient
Lead-free, RoHS compliant
Base part number
IRGP6660DPBF
IRGP6660D-EPBF
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
FRM
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Repetitive Peak Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Package Type
TO-247AC
TO-247AD
Benefits
High efficiency in a wide range of applications
Optimized for welding and H bridge converters
Improved reliability due to rugged hard switching
performance and higher power capability
Enables short circuit protection scheme
Excellent current sharing in parallel operation
Environmentally friendly
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6660DPBF
IRGP6660D-EPBF
Max.
600
95
60
144
192
30
192
±20
330
167
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.45
3.35
–––
40
Units
V
A
V
W
C
Thermal Resistance
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Units
°C/W
1
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November 14, 2014
IRGP6660DPbF/IRGP6660D-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
600
—
Typ.
—
0.65
Max.
—
—
Units
Conditions
V
V
GE
= 0V, I
C
= 150µA
V/°C V
GE
= 0V, I
C
= 2mA (25°C-175°C)
—
1.65
—
2.05
V
CE(on)
Collector-to-Emitter Saturation Voltage
—
2.10
V
GE(th)
Gate Threshold Voltage
4.0
—
Threshold Voltage Temperature Coeff.
—
-17
ΔV
GE(th)
/ΔT
J
gfe
Forward Transconductance
—
33
—
1.0
I
CES
Collector-to-Emitter Leakage Current
—
630
Gate-to-Emitter Leakage Current
—
—
I
GES
—
1.8
Diode Forward Voltage Drop
V
FM
—
1.3
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 210µH, R
G
= 10Ω.
R
θ
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
1.95
I
C
= 48A, V
GE
= 15V, T
J
= 25°C
V
—
I
C
= 48A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 48A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 1.4mA
—
mV/°C V
CE
= V
GE
, I
C
= 1.4mA (25°C-175°C)
—
S
V
CE
= 50V, I
C
= 48A, PW = 20µs
75
µA V
GE
= 0V, V
CE
= 600V
—
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
±100
nA V
GE
= ±20V
2.8
V
I
F
= 8.0A
—
I
F
= 8.0A, T
J
= 175°C
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
nC
I
C
= 48A
V
GE
= 15V
V
CC
= 400V
I
C
= 48A, V
CC
= 400V, V
GE
=15V
R
G
= 10Ω, L = 210µH, T
J
= 25°C
Energy losses include tail & diode
reverse recovery
Conditions
Parameter
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
95
28
35
0.6
1.3
1.9
60
50
155
30
0.78
1.6
2.38
45
55
160
60
2970
175
85
mJ
ns
mJ
I
C
= 48A, V
CC
= 400V, V
GE
=15V
R
G
= 10Ω, L = 210µH, T
J
= 175°C
Energy losses include tail & diode
reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 175°C, I
C
= 192A
V
CC
= 480V, Vp
≤
600V
V
GE
= +20V to 0V
T
J
= 150°C,V
CC
= 400V, Vp
≤
600V
V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 8.0A
V
GE
= 15V, Rg = 10Ω
ns
pF
FULL SQUARE
5
—
—
—
—
135
70
22
—
—
—
—
µs
µJ
ns
A
2
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November 14, 2014
IRGP6660DPbF/IRGP6660D-EPbF
100
90
80
Load Current ( A )
70
60
50
40
30
20
0.1
1
f , Frequency ( kHz )
10
Square Wave:
V
CC
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 167W
I
Diode as specified
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
350
300
250
Ptot (W)
80
60
IC (A)
200
150
100
40
20
50
0
25
50
75
100
TC (°C)
125
150
175
0
25
50
75
100
TC (°C)
125
150
175
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
100
10µsec
100µsec
1msec
10
IC (A)
Fig. 3
- Power Dissipation vs.
Case Temperature
100
IC (A)
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
10
1
10
100
V CE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C; T
J
≤
175°C; V
GE
= 15V
3
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© 2014 International Rectifier
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
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November 14, 2014
IRGP6660DPbF/IRGP6660D-EPbF
200
200
150
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
150
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
ICE (A)
ICE (A)
100
100
50
50
0
0
2
4
6
8
10
V CE (V)
0
0
2
4
6
8
10
V CE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
200
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
200
175°C
25°C
-40°C
150
150
ICE (A)
100
50
IF (A)
100
50
0
0
2
4
6
8
10
V CE (V)
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
VF (V)
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
7
6
5
V CE (V)
Fig. 9
- Typ. Diode Forward Voltage Drop
Characteristics
7
6
ICE = 96A
V CE (V)
4
3
2
1
0
5
10
V GE (V)
ICE = 24A
ICE = 48A
5
4
3
2
1
0
ICE = 24A
ICE = 48A
ICE = 96A
15
20
5
10
V GE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
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© 2014 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
Submit Datasheet Feedback
November 14, 2014
IRGP6660DPbF/IRGP6660D-EPbF
7
6
5
V CE (V)
200
ICE = 24A
ICE = 48A
ICE = 96A
150
TJ = 25°C
TJ = 175°C
ICE (A)
5
10
V GE (V)
15
20
4
3
2
1
0
100
50
0
2
4
6
8
10
12
14
16
V GE (V)
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 175°C
6.0
5.0
4.0
Energy (mJ)
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
1000
Swiching Time (ns)
tdOFF
100
tF
tdON
tR
10
3.0
EOFF
2.0
1.0
0.0
20
30
40
50
60
IC (A)
70
80
90
100
EON
10
20
30
40
50
60
70
80
90 100
IC (A)
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 210µH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
5.0
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 210µH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
1000
4.0
EOFF
Swiching Time (ns)
tdOFF
Energy (mJ)
3.0
100
tR
tF
tdON
2.0
EON
1.0
0.0
0
20
40
60
80
100
10
0
20
40
60
80
100
RG (
Ω
)
RG (
Ω
)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 210µH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
5
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© 2014 International Rectifier
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 210µH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
Submit Datasheet Feedback
November 14, 2014
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