IRLR120, IRLU120, SiHLR120, SiHLU120
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5.0 V
12
3.0
7.1
Single
D
DPAK
(TO-252)
D
D
FEATURES
100
0.27
•
•
•
•
•
•
•
•
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRLR120, SiHLR120)
Straight Lead (IRLU120, SiHLU120)
Available in Tape and Reel
Logic-Level Gate Drive
R
DS(on)
Specified at V
GS
= 4 V and 5 V
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
IPAK
(TO-251)
DESCRIPTION
G
G
S
G
D S
S
N-Channel MOSFET
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHLR120-GE3
IRLR120PbF
SiHLR120-E3
DPAK (TO-252)
SiHLR120TRL-GE3
IRLR120TRLPbF
a
SiHLR120TL-E3
a
DPAK (TO-252)
SiHLR120TR-GE3
IRLR120TRPbF
a
SiHLR120T-E3
a
DPAK (TO-252)
SiHLR120TRR-GE3
IRLR120TRRPbF
a
SiHLR120TR-E3
a
IPAK (TO-251)
SiHLU120-GE3
IRLU120PbF
SiHLU120-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB
Mount)
e
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche
Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 5.3 mH, R
g
= 25
,
I
AS
= 7.7 A (see fig. 12).
c. I
SD
9.2 A, dI/dt
110 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0167-Rev. D, 04-Feb-13
Document Number: 91324
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V
GS
at 5.0 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
100
± 10
7.7
4.9
31
0.33
0.020
210
7.7
4.2
42
2.5
5.5
- 55 to + 150
260
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
IRLR120, IRLU120, SiHLR120, SiHLU120
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.0
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 10 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 5.0 V
V
GS
= 4.0 V
I
D
= 4.6 A
b
I
D
= 3.9 A
b
100
-
1.0
-
-
-
-
-
4.4
-
-
-
-
-
-
-
-
-
-
-
0.13
-
-
-
-
-
-
-
490
150
30
-
-
-
9.8
64
21
27
4.5
7.5
-
-
2.0
± 100
25
250
0.27
0.38
-
-
-
-
12
3.0
7.1
-
-
-
-
-
V
V/°C
V
nA
μA
S
V
DS
= 50 V, I
D
= 4.6 A
b
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
I
D
= 9.2 A, V
DS
= 80 V,
see fig. 6 and 13
b
pF
V
GS
= 5.0 V
nC
V
DD
= 50 V, I
D
= 9.2 A,
R
g
= 9.0
,
R
D
= 5.2
,
see fig. 10
b
ns
Between lead,
6 mm (0.25") from
package and center of
die contact
c
D
-
G
nH
-
S
-
-
-
-
-
-
-
-
-
110
0.80
7.7
A
31
2.5
140
1.0
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 7.7 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 9.2 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
S13-0167-Rev. D, 04-Feb-13
Document Number: 91324
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRLR120, IRLU120, SiHLR120, SiHLU120
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S13-0167-Rev. D, 04-Feb-13
Document Number: 91324
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRLR120, IRLU120, SiHLR120, SiHLU120
www.vishay.com
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
S13-0167-Rev. D, 04-Feb-13
Document Number: 91324
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRLR120, IRLU120, SiHLR120, SiHLU120
www.vishay.com
Vishay Siliconix
R
D
V
DS
V
GS
R
g
D.U.T.
+
- V
DD
5.0 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S13-0167-Rev. D, 04-Feb-13
Document Number: 91324
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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