AUTOMOTIVE GRADE
Features
Advanced Planar Technology
P-Channel MOSFET
Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
2
AUIRF4905S
AUIRF4905L
V
DSS
R
DS(on)
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
D
HEXFET
®
Power MOSFET
-55V
20m
-70A
-42A
S
G
D Pak
AUIRF4905S
G
TO-262
AUIRF4905L
S
D
G
Gate
D
Drain
S
Source
Base part number
AUIRF4905L
AUIRF4905S
Package Type
TO-262
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF4905L
AUIRF4905S
AUIRF4905STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
-70
-44
-42
-280
170
1.3
± 20
140
790
See Fig.15,16, 12a, 12b
-55 to + 150
300
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
Max.
0.75
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-11-13
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
AUIRF4905S/L
Min. Typ. Max. Units
Conditions
-55
–––
–––
V V
GS
= 0V, I
D
= -250µA
––– -0.054 ––– V/°C Reference to 25°C, I
D
= -1mA
––– –––
20
m V
GS
= -10V, I
D
= -42A
-2.0 ––– -4.0
V V
DS
= V
GS
, I
D
= -250µA
19
–––
–––
S V
DS
= -25V, I
D
= -42A
––– –––
-25
V
DS
= -55V, V
GS
= 0V
µA
––– ––– -250
V
DS
= -44V,V
GS
= 0V,T
J
=125°C
––– ––– -100
V
GS
= -20V
nA
––– –––
100
V
GS
= 20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
120
32
53
20
99
51
64
4.5
7.5
3500
1250
450
4620
940
1530
Typ.
–––
–––
–––
61
150
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= -42A
nC
V
DS
= -44V
V
GS
= -10V
V
DD
= -28V
I
D
= -42A
ns
R
G
= 2.6
V
GS
= -10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz
pF
V
GS
= 0V,V
DS
= -1.0V ƒ = 1.0MHz
V
GS
= 0V,V
DS
= -44V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to -44V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= -42A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= -42A , V
DD
= -28V
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Max. Units
-42
-280
-1.3
92
220
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.16mH, R
G
= 25, I
AS
= -42A, V
GS
=-10V. Part not recommended for use above this value.
Pulse width
1.0ms;
duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting T
J
= 25°C, L = 0.08mH, R
G
= 25, I
AS
= 66A, V
GS
=10V.
This is applied to D
2
Pak, When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994
R
is measured at T
J
of approximately 90°C
2
2015-11-13
AUIRF4905S/L
1000
1000
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
TOP
100
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
10
-4.5V
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
1000
-4.5V
1
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10
100
1000
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000.0
40
Gfs, Forward Transconductance (S)
TJ = 25°C
-ID , Drain-to-Source Current
)
100.0
TJ = 25°C
30
TJ = 150°C
20
TJ = 150°C
10.0
1.0
10
VDS = -10V
380µs PULSE WIDTH
0
0
20
40
60
80
VDS = -25V
0.1
3
4
5
6
7
8
9
10
60µs PULSE WIDTH
11
12
13
14
-VGS, Gate-to-Source Voltage (V)
-ID, Drain-to-Source Current (A)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Trans conductance
vs. Drain Current
3
2015-11-13
AUIRF4905S/L
7000
6000
5000
4000
3000
2000
1000
0
1
-VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
ID= -42A
16
VDS = -44V
VDS= -28V
VDS= -11V
C, Capacitance (pF)
Ciss
12
8
Coss
4
Crss
0
10
100
0
40
80
120
160
200
-VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
1000.0
1000
-ID, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100.0
TJ = 150°C
10.0
100
1msec
100µsec
10msec
10
LIMITED BY PACKAGE
1.0
TJ = 25°C
DC
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
10
100
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
-VSD , Source-to-Drain Voltage (V)
-VDS , Drain-toSource Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
2015-11-13
AUIRF4905S/L
80
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
LIMITED BY PACKAGE
60
ID = -42A
VGS = -10V
-ID , Drain Current (A)
1.5
40
1.0
20
0
25
50
75
100
125
150
TC , Case Temperature (°C)
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1
0.10
0.05
0.02
0.01
J
J
1
R
1
R
1
2
R
2
R
2
R
3
R
3
C
3
C
Ri (°C/W)
0.1165
0.3734
0.2608
i
(sec)
0.000068
0.002347
0.014811
1
2
0.01
3
Ci=
iRi
Ci=
iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-11-13
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