IRFH5250PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
Q
g (typical)
R
G (typical)
I
D
(@T
mb
= 25°C)
25
1.15
52
1.3
100
V
m
Ω
nC
Ω
A
PQFN 5X6 mm
h
Applications
•
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
•
Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Low RDSon (<1.15 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
results in
⇒
Orderable part number
IRFH5250TRPbF
IRFH5250TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Tape and Reel
Tape and Reel
Quantity
4000
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
mb
= 25°C
I
D
@ T
mb
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
mb
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Max.
25
± 20
45
100
31
Units
V
g
Power Dissipation
g
c
h
100
h
400
3.6
160
0.029
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
-55 to + 150
Storage Temperature Range
Notes
through
are on page 9
1
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2015 International Rectifier
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May 19, 2015
IRFH5250PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
181
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
0.9
1.4
1.80
-6.3
–––
–––
–––
–––
–––
110
52
13
7.8
17
15
25
36
1.3
28
46
30
19
7174
1758
828
Max.
–––
–––
1.15
1.75
2.35
–––
5.0
150
100
-100
–––
–––
78
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
mΩ
V
mV/°C
μA
nA
S
nC
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
V
GS
= 4.5V, I
D
= 50A
V
DS
= V
GS
, I
D
= 150μA
e
e
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
= 50A
V
GS
= 10V, V
DS
= 13V, I
D
= 50A
V
DS
= 13V
V
GS
= 4.5V
I
D
= 50A
nC
nC
Ω
ns
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 50A
R
G
=1.8Ω
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
pF
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
c
d
Typ.
–––
–––
Max.
468
50
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
37
68
Max.
100
Units
showing the
Conditions
MOSFET symbol
D
h
A
Ã
400
1.0
56
102
V
ns
nC
integral reverse
p-n junction diode.
G
S
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
di/dt = 200A/μs
T
J
= 25°C, I
F
= 50A, V
DD
= 13V
e
eÃ
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
R
θJ-mb
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Mounting Base
Junction-to-Case
Typ.
0.5
–––
–––
–––
Max.
0.8
15
35
21
°C/W
Units
g
Junction-to-Ambient
g
Junction-to-Ambient
f
2
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2015 International Rectifier
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May 19, 2015
IRFH5250PbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
2.7V
2.7V
≤
60μs
PULSE WIDTH
1
0.1
1
Tj = 25°C
10
≤
60μs
PULSE WIDTH
Tj = 150°C
0.1
1
10
100
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.6
ID = 50A
VGS = 10V
ID, Drain-to-Source Current (A)
100
1.4
1.2
10
T J = 150°C
1.0
1
T J = 25°C
VDS = 15V
≤60μs
PULSE WIDTH
0.8
0.1
1
1.5
2
2.5
3
3.5
4
4.5
5
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance Vs. Temperature
14.0
ID= 50A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 20V
VDS= 13V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
140
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.Drain-to-Source Voltage
3
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2015 International Rectifier
Fig 6.
Typical Gate Charge Vs.Gate-to-Source Voltage
May 19, 2015
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IRFH5250PbF
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
100
T J = 150°C
10
T J = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
1000
100μsec
1msec
100
10
Limited by Package
10msec
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
350
Limited By Package
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
3.0
300
ID, Drain Current (A)
2.5
250
200
150
100
50
0
25
50
75
100
125
150
TC , Case Temperature (°C)
2.0
1.5
ID = 1.0A
ID = 1.0mA
ID = 500μA
ID = 150μA
-75 -50 -25
0
25
50
75 100 125 150
1.0
0.5
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case (Bottom) Temperature
1
D = 0.50
Thermal Response ( ZthJC ) °C/W
Fig 10.
Threshold Voltage Vs. Temperature
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
0.0001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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May 19, 2015
IRFH5250PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
4
ID = 50A
3
2000
EAS , Single Pulse Avalanche Energy (mJ)
1800
1600
1400
1200
1000
800
600
400
200
0
25
50
75
ID
TOP
18A
24A
BOTTOM 50A
2
T J = 125°C
1
T J = 25°C
0
2
4
6
8
10
12
14
16
18
20
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
1000
Avalanche Current (A)
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔTj
= 125°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanch Current vs. Pulsewidth
5
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2015 International Rectifier
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May 19, 2015
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