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CY7C1011CV33-10BAJXE

产品描述SRAM 2Mb 10ns3.3V 128Kx16 Fast Async SRAM
产品类别存储   
文件大小356KB,共15页
制造商Cypress(赛普拉斯)
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CY7C1011CV33-10BAJXE概述

SRAM 2Mb 10ns3.3V 128Kx16 Fast Async SRAM

CY7C1011CV33-10BAJXE规格参数

参数名称属性值
产品种类
Product Category
SRAM
制造商
Manufacturer
Cypress(赛普拉斯)
RoHSDetails
Memory Size2 Mbit
Organization128 k x 16
Access Time10 ns
接口类型
Interface Type
Parallel
电源电压-最大
Supply Voltage - Max
3.6 V
电源电压-最小
Supply Voltage - Min
3 V
Supply Current - Max130 mA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 125 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
FBGA-48
系列
Packaging
Tray
Memory TypeSDR
Moisture SensitiveYes
工作温度范围
Operating Temperature Range
- 40 C to + 125 C
工厂包装数量
Factory Pack Quantity
480
类型
Type
Asynchronous

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CY7C1011CV33 Automotive
2-Mbit (128 K × 16) Static RAM
2-Mbit (128 K × 16) Static RAM
Features
Functional Description
The CY7C1011CV33 Automotive is a high performance
complementary metal oxide semiconductor (CMOS) static RAM
organized as 131,072 words by 16 bits. This device has an
automatic power down feature that significantly reduces power
consumption when deselected.
To write to the device, take CE and Write Enable (WE) inputs
LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins
(I/O
0
through I/O
7
), is written into the location specified on the
address pins (A
0
through A
16
). If Byte High Enable (BHE) is
LOW, then data from I/O pins (I/O
8
through I/O
15
) is written into
the location specified on the address pins (A
0
through A
16
).
To read from the device, take CE and OE LOW while forcing the
Write Enable (WE) HIGH. If BLE is LOW, then data from the
memory location specified by the address pins appear on I/O
0
to
I/O
7
. If Byte High Enable (BHE) is LOW, then data from memory
appears on I/O
8
to I/O
15
. For more information, see the
Truth
Table on page 10
for a complete description of Read and Write
modes.
The input and output pins (I/O
0
through I/O
15
) are placed in a
high impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), the BHE and BLE are
disabled (BHE, BLE HIGH), or during a write operation (CE LOW
and WE LOW).
For a complete list of related resources,
click here.
Temperature ranges
Automotive-E: –40 °C to 125 °C
High speed
t
AA
= 10 ns
Low active power
468 mW (max)
2.0 V data retention
Automatic power down when deselected
Independent control of upper and lower bits
Easy memory expansion with Chip Enable (CE) and Output
Enable (OE) features
Available in Pb-free 48-ball grid array (BGA) package
Logic Block Diagram
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
ROW DECODER
128 K x 16
RAM Array
SENSE AMPS
I/O
0
–I/O
7
I/O
8
–I/O
15
COLUMN DECODER
BHE
WE
CE
OE
BLE
A
10
A
11
A
12
A
14
A
15
A
13
A
16
A
9
Cypress Semiconductor Corporation
Document Number: 001-86374 Rev. *C
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised April 17, 2015
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