AUTOMOTIVE GRADE
AUIRFR3607
AUIRFU3607
V
DSS
R
DS(on)
typ.
max.
75V
7.34m
9.0m
80A
56A
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
I
D (Silicon Limited)
I
D (Package Limited)
D
D
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
Base part number
AUIRFU3607
AUIRFR3607
Package Type
I-Pak
D-Pak
G
S
G
S
D
D-Pak
AUIRFR3607
I-Pak
AUIRFU3607
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRFU3607
AUIRFR3607
AUIRFR3607TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
80
56
56
310
140
0.96
± 20
120
46
14
27
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2017-10-03
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
gfs
Forward Trans conductance
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
AUIRFR/U3607
Min. Typ. Max. Units
Conditions
75
––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.096 ––– V/°C Reference to 25°C, I
D
= 5mA
––– 7.34 9.0
m V
GS
= 10V, I
D
= 46A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 100µA
115 ––– –––
S V
DS
= 50V, I
D
= 46A
––– –––
20
V
DS
= 75V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 60V,V
GS
= 0V,T
J
=125°C
––– ––– 100
V
GS
= 20V
nA
––– ––– -100
V
GS
= -20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
56
13
16
40
0.55
16
110
43
96
3070
280
130
380
610
84
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 46A
V
DS
= 38V
nC
V
GS
= 10V
V
DD
= 49V
I
D
= 46A
ns
R
G
= 6.8
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
pF
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 46A,V
GS
= 0V
T
J
= 25°C
V
R
= 64V,
ns
T
J
= 125°C
I
F
= 46A
T
J
= 25°C
di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Total Gate Charge
Q
g
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
R
G
Gate Resistance
t
d(on)
Turn-On Delay Time
Rise Time
t
r
t
d(off)
Turn-Off Delay Time
Fall Time
t
f
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss eff.
(ER) Effective Output Capacitance (Energy Related)
C
oss eff.
(TR) Effective Output Capacitance (Time Related)
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
I
RRM
t
on
Notes:
Typ. Max. Units
–––
–––
–––
33
39
32
47
1.9
80
310
1.3
50
59
48
71
–––
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax ,
starting T
J
= 25°C, L = 0.12mH, R
G
= 25, I
AS
= 46A, V
GS
=10V. Part not recommended for use above this value.
I
SD
46A, di/dt
1920A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss eff
. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss eff
. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is
measured at T
J
approximately 90°C.
2
2017-10-03
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
AUIRFR/U3607
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
4.5V
4.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
1000
Fig. 2
Typical Output Characteristics
3.0
R DS(on) , Drain-to-Source On Resistance
ID = 80A
2.5
VGS = 10V
ID, Drain-to-Source Current (A)
100
10
T J = 175°C
T J = 25°C
(Normalized)
2.0
1.5
1
VDS = 25V
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
12.0
ID= 46A
VGS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
0
10
20
VDS = 60V
VDS= 38V
VDS = 15V
C, Capacitance (pF)
10000
C iss
1000
C oss
C rss
100
1
10
VDS , Drain-to-Source Voltage (V)
100
30
40
50
60
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2017-10-03
AUIRFR/U3607
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)
100µsec
1msec
ISD, Reverse Drain Current (A)
100
T J = 175°C
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD , Source-to-Drain Voltage (V)
100
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10msec
DC
10
VDS , Drain-to-Source Voltage (V)
100
Fig. 7
Typical Source-to-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 8.
Maximum Safe Operating Area
100
Id = 5mA
95
90
85
80
75
70
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Temperature ( °C )
80
70
60
ID, Drain Current (A)
Limited By Package
50
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig. 9
Maximum Drain Current vs. Case Temperature
1.20
Fig 10.
Drain-to-Source Breakdown Voltage
500
EAS , Single Pulse Avalanche Energy (mJ)
450
400
350
300
250
200
150
100
50
0
25
50
75
100
1.00
0.80
Energy (µJ)
ID
TOP
5.6A
11A
BOTTOM 46A
0.60
0.40
0.20
0.00
-10
0
10
20
30
40
50
60
70
80
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig. 11
Typical C
OSS
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2017-10-03
AUIRFR/U3607
10.00
Thermal Response ( Z thJC ) °C/W
1.00
D = 0.50
0.20
Ri (°C/W)
J
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
3
R
4
R
4
C
1
2
3
4
4
C
i
(sec)
0.000003
0.000130
0.001301
0.10
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.01109
0.26925
0.49731
0.01
Ci=
iRi
Ci=
iRi
0.26766
0.08693
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.00
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
10
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current Vs. Pulse width
150
125
100
75
50
25
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 46A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 13, 14).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
EAR , Avalanche Energy (mJ)
Fig 15.
Maximum Avalanche Energy Vs. Temperature
5
2017-10-03
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