Ideally suited for high voltage, high frequency rectification, or as
free wheeling and protection diodes in surface mount applications
where compact size and weight are critical to the system.
Features
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ULTRAFAST RECTIFIERS
2 AMPERES, 300−400 VOLTS
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.95 Volts Max @ 2.0 A, T
J
= 150C)
AEC−Q101 Qualified and PPAP Capable
NRVUS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
Pb−Free Packages*
Mechanical Characteristics:
SMB
CASE 403A
MARKING DIAGRAM
Case: Epoxy, Molded
Weight: 95 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
AYWW
U2x
G
G
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Polarity: Polarity Band Indicates Cathode Lead
ESD Rating:
Human Body Model = 3A (> 4 kV)
Machine Model = C (> 400 V)
A
Y
WW
U2x
=
=
=
=
G
Assembly Location
Year
Work Week
Device Code
x= F for MURS230T3
= G for MURS240T3
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MURS230T3G
NRVUS230T3G
MURS240T3G
NRVUS240T3G
Package
SMB
(Pb−Free)
SMB
(Pb−Free)
SMB
(Pb−Free)
SMB
(Pb−Free)
Shipping
†
2,500 /
Tape & Reel
2,500 /
Tape & Reel
2,500 /
Tape & Reel
2,500 /
Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
January, 2012
−
Rev. 8
1
Publication Order Number:
MURS230T3/D
MURS230T3G, NRVUS230T3G, MURS240T3G, NRVUS240T3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MURS230T3G/NRVUS230T3G
MURS240T3G/NRVUS240T3G
Average Rectified Forward Current
@ T
L
= 150C
@ T
L
= 125C
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature Range
Symbol
V
RRM
V
RWM
V
R
Value
Unit
V
300
400
1.0
2.0
35
−65
to +175
A
I
F(AV)
I
FSM
T
J
A
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction−to−Lead (T
L
= 25C)
Symbol
R
qJL
Max
13
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 2.0 A, T
J
= 25C)
(i
F
= 2.0 A, T
J
= 150C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
J
= 25C)
(Rated DC Voltage, T
J
= 150C)
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
(i
F
= 0.5 A, i
R
= 1.0 A, I
R
to 0.25 A)
Maximum Forward Recovery Time
(i
F
= 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
2.0%.
Symbol
v
F
Value
1.30
1.05
5.0
150
65
50
50
Unit
V
i
R
mA
t
rr
ns
t
fr
ns
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2
MURS230T3G, NRVUS230T3G, MURS240T3G, NRVUS240T3G
10
7.0
5.0
10
7.0
5.0
3.0
175C
I , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
2.0
T
C
= 25C
1.0
0.7
0.5
100C
I , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
3.0
175C
2.0
T
C
= 25C
1.0
0.7
0.5
100C
0.3
0.2
0.3
0.2
0.1
0.07
0.05
0.1
0.07
0.05
0.03
0.02
0.03
0.02
0.01
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.01
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
100
I
R
, REVERSE CURRENT (mA)
10
1
0.1
0.01
T
J
= 175C
T
J
= 150C
T
J
= 100C
I
R
, REVERSE CURRENT (mA)
1000
T
J
= 175C
100
T
J
= 150C
10
T
J
= 100C
1
T
J
= 25C
T
J
= 25C
0
50
100
150
200
250
300
350
400
0.001
0.1
0
50
100
150
200
250
300
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be estim
ated from these same curves if applied V
R
is sufficiently below rated V
R
.
Figure 4. Maximum Reverse Current for
MURS230T3G, NRVUS230T3G
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3
MURS230T3G, NRVUS230T3G, MURS240T3G, NRVUS240T3G
1000
I
R
, REVERSE CURRENT (mA)
T
J
= 175C
100
T
J
= 150C
10
T
J
= 100C
1
T
J
= 25C
0.1
0
50
100
150
200
250
300
350
400
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Maximum Reverse Current for
MURS240T3G, NRVUS240T3G
30
25
C, CAPACITANCE (pF)
20
15
10
5
0
0
4.0
8.0
12
16
20
24
28
32
36
40
V
R
, REVERSE VOLTAGE (VOLTS)
NOTE: TYPICAL
CAPACITANCE AT
0 V = 26 pF
35
30
C, CAPACITANCE (pF)
25
20
15
10
5
0
0
4
8
12
16
20
24
28
32
36
40
V
R
, REVERSE VOLTAGE (VOLTS)
NOTE: MAXIMUM
CAPACITANCE AT
0 V = 30 pF
Figure 6. Typical Capacitance
Figure 7. Maximum Capacitance
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
10
9
8
7
6
5
4
3
2
1
0
80
90
100
110
120
130
140
150
160
170
180
T
C
, CASE TEMPERATURE (C)
SQUARE WAVE
dc
RATED VOLTAGE APPLIED
R
qJL
= 13C/W
T
J
= 175C
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
5
T
J
= 175C
4
3
SQUARE WAVE
dc
1
0
0
0.5
1.0
1.5
2.0
2.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
2
Figure 8. Current Derating, Case
Figure 9. Power Dissipation
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4
MURS230T3G, NRVUS230T3G, MURS240T3G, NRVUS240T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE H
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
DIM
A
A1
b
c
D
E
H
E
L
L1
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.20
2.28
0.10
0.19
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.087
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.090
0.007
0.087
0.012
0.156
0.181
0.220
0.063
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
L1
c
A1
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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std_logic_arithThis is the library that defines some types and basic arithmetic operations for representing integers in standard ways. This is a Synopsys extention. The source ......
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