Repetitive Avalanche Capability for Robustness and
Reliability
•
Lead free, RoHS and Halogen free
DirectFET
®
Power MOSFET
V
(BR)DSS
40V
R
DS(on)
typ.
5.0mΩ
max.
6.6mΩ
I
D (Silicon Limited)
58A
Q
g
22nC
AUIRL7732S2TR
AUIRL7732S2TR1
S
D
G
S
D
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
SC
DirectFET ISOMETRIC
L4
L6
L8
Description
The AUIRL7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to achieve
low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile.
The DirectFET
®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET
®
packaging
platform coupled with the latest silicon technology allows the AUIRL7732S2 to offer substantial system level savings and performance improvement
specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The AUIRL7732S2 can be utilized
together with the AUIRL7736M2 as a control/sync MOSFET pair in a buck converter topology. This MOSFET utilizes the latest processing techniques
to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive
applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
A
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
E
AS
E
AS
(tested)
I
AR
E
AR
T
P
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
Units
V
A
f
e
i
f
f
e
Ãg
h
h
g
40
± 16
58
41
14
230
41
2.2
46
124
See Fig. 18a,18b,16,17
260
-55 to + 175
W
mJ
A
mJ
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJCan
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
Linear Derating Factor
fl
e
j
k
Parameter
Typ.
–––
12.5
20
–––
1.0
0.27
Max.
67
–––
–––
3.7
–––
Units
°C/W
f
W/°C
HEXFET
®
is a registered trademark of International Rectifier.
www.irf.com
1
04/07/11
AUIRL7732S2TR/TR1
Static Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
gfs
R
G
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
40
–––
–––
–––
1.0
–––
64
–––
–––
–––
–––
–––
Typ.
–––
0.03
5.0
7.5
1.8
-7.1
–––
0.64
–––
–––
–––
–––
Max.
–––
–––
6.6
10.5
2.5
–––
–––
–––
5
250
100
-100
Units
Conditions
V
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 35A
V
GS
= 4.5V, I
D
= 29A
V
V
DS
= V
GS
, I
D
= 50μA
mV/°C
V
DS
= 10V, I
D
= 35A
S
Ω
μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
nA
V
GS
= -16V
i
i
Dynamic Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
Typ.
22
3.3
2.8
13
2.9
15.8
13
21
123
22
37
2020
410
210
1460
365
630
Typ.
–––
–––
–––
23
16
Max.
33
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
58
230
1.3
35
24
Units
V
DS
= 20V
V
GS
= 4.5V
I
D
= 35A
See Fig.11
Conditions
nC
nC
ns
V
DS
= 16V, V
GS
= 0V
V
DD
= 20V, V
GS
= 4.5V
I
D
= 35A
R
G
= 6.8Ω
Ãi
pF
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
GS
= 0V, V
DS
= 32V, f=1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
= 35A, V
GS
= 0V
I
F
= 35A, V
DD
= 20V
Diode Characteristics @ T
J
= 25°C (unless otherwise stated)
Units
A
I
S
I
SM
V
SD
t
rr
Q
rr
D
Ãg
G
S
V
ns
nC
i
di/dt = 100A/μs
i
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes
through
are on page 11
2
www.irf.com
AUIRL7732S2TR/TR1
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
SMALL-CAN
MSL1, 260°C
Class M4 (+/- 425V)
AEC-Q101-002
†††
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device
Model
RoHS Compliant
Class H1B (+/- 1000V)
AEC-Q101-001
N/A
AEC-Q101-005
Yes
†††
Qualification standards can be found at International Rectifiers web site:
http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRL7732S2TR/TR1
1000
1000
≤
60μs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
TOP
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.8V
2.5V
≤
60μs PULSE WIDTH
Tj = 175°C
TOP
100
BOTTOM
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.8V
2.5V
10
10
2.5V
1
2.5V
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
RDS(on) , Drain-to -Source On Resistance (m
Ω)
ID = 35A
RDS(on), Drain-to -Source On Resistance ( mΩ)
Fig 2.
Typical Output Characteristics
16
Vgs = 10V
14
12
10
8
6
4
2
0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
TJ = 25°C
T J = 125°C
16
14
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 125°C
Fig 3.
Typical On-Resistance vs. Gate Voltage
1000
VGS, Gate -to -Source Voltage (V)
Fig 4.
Typical On-Resistance vs. Drain Current
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 35A
ID, Drain-to-Source Current (A)
VGS = 10V
100
T J = -40°C
T J = 25°C
T J = 175°C
1.5
10
1.0
1
VDS = 25V
≤60μs
PULSE WIDTH
1
2
3
4
5
6
0.1
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Normalized On-Resistance vs. Temperature
4
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AUIRL7732S2TR/TR1
3.0
VGS(th) , Gate threshold Voltage (V)
1000
ISD, Reverse Drain Current (A)
2.5
100
TJ = -40°C
TJ = 25°C
T J = 175°C
10
2.0
ID = 50μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
1.5
1.0
VGS = 0V
0.5
-75 -50 -25
0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Threshold Voltage vs. Junction Temperature
100
Gfs, Forward Transconductance (S)
Fig 8.
Typical Source-Drain Diode Forward Voltage
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 25°C
80
C, Capacitance (pF)
10000
60
T J = 175°C
Ciss
1000
Coss
Crss
40
20
V DS = 5.0V
380μs PULSE WIDTH
100
0
0
20
40
60
80
100
ID,Drain-to-Source Current (A)
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 9.
Typical Forward Transconductance vs. Drain Current
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