HN1B01FDW1T1G,
SHN1B01FDW1T1G
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
Features
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•
•
•
•
High Voltage and High Current: V
CEO
= 50 V, I
C
= 200 mA
High h
FE
: h
FE
= 200X400
Moisture Sensitivity Level: 1
ESD Rating
♦
Human Body Model: 3A
♦
Machine Model: C
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SC−74
CASE 318F
STYLE 3
(6)
(5)
(4)
Q
1
Q
2
(1)
(2)
(3)
MARKING DIAGRAM
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Value
60
50
7.0
200
Unit
Vdc
Vdc
Vdc
mAdc
R9
M
R9 MG
G
G
= Specific Device Code
= Date Code
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping
†
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
D
T
J
T
stg
Max
380
150
−55 to +150
Unit
mW
°C
°C
HN1B01FDW1T1G
SHN1B01FDW1T1G
SC−74 3,000/Tape & Reel
(Pb−Free)
SC−74 3,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 4
Publication Order Number:
HN1B01FDW1T1/D
HN1B01FDW1T1G, SHN1B01FDW1T1G
Q1: PNP
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Collector−Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter−Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector−Base Cutoff Current
(V
CB
= 45 Vdc, I
E
= 0)
Collector−Emitter Cutoff Current
(V
CE
= 10 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0, T
A
= 80°C)
DC Current Gain (Note 1)
(V
CE
= 6.0 Vdc, I
C
= 2.0 mAdc)
Collector−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
Symbol
V
(BR)CEO
−50
V
(BR)CBO
−60
V
(BR)EBO
−7.0
I
CBO
−
I
CEO
−
−
−
h
FE
−200
V
CE(sat)
−
−0.3
−400
Vdc
−0.1
−2.0
−1.0
−0.1
mAdc
mAdc
mAdc
−
−
mAdc
−
Vdc
−
Vdc
Min
Max
Unit
Vdc
Q2: NPN
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Collector−Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter−Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector−Base Cutoff Current
(V
CB
= 45 Vdc, I
E
= 0)
Collector−Emitter Cutoff Current
(V
CE
= 10 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0, T
A
= 80°C)
DC Current Gain (Note 1)
(V
CE
= 6.0 Vdc, I
C
= 2.0 mAdc)
Collector−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
1. Pulse Test: Pulse Width
≤
300
ms,
D.C.
≤
2%.
Symbol
V
(BR)CEO
50
V
(BR)CBO
60
V
(BR)EBO
7.0
I
CBO
−
I
CEO
−
−
−
h
FE
200
V
CE(sat)
−
0.25
400
Vdc
0.1
2.0
1.0
0.1
mAdc
mAdc
mAdc
−
−
mAdc
−
Vdc
−
Vdc
Min
Max
Unit
Vdc
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2
HN1B01FDW1T1G, SHN1B01FDW1T1G
TYPICAL ELECTRICAL CHARACTERISTICS: PNP Transistor
−200
I
C
, COLLECTOR CURRENT (mA)
−2.0 mA
−160
−1.5 mA
−1.0 mA
h
FE
, DC CURRENT GAIN
T
A
= 100°C
1000
−120
−0.5 mA
−80
I
B
= −0.2 mA
−40
T
A
= 25°C
0
0
−1
−2
−3
−4
−5
−6
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
25°C
100
−25°C
10
−1
V
CE
= −1.0 V
−10
−100
−1000
I
C
, COLLECTOR CURRENT (mA)
Figure 1. Collector Saturation Region
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (V)
Figure 2. DC Current Gain
1000
−1
I
C
/I
B
= 10
T
A
= 100°C
25°C
−0.1
−25°C
h
FE
, DC CURRENT GAIN
T
A
= 100°C
25°C
100
−25°C
10
−1
V
CE
= −6.0 V
−10
−100
−1000
−0.01
−1
−10
−100
−1000
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
Figure 4. V
CE(sat)
versus I
C
−10
BASE−EMITTER SATURATION
VOLTAGE (V)
−10,000
COMMON EMITTER
V
CE
= 6 V
I
B
, BASE CURRENT (mA)
−1000
25°C
T
A
= 100°C
−25°C
−100
−1
−10
T
A
= 25°C
I
C
/I
B
= 10
−10
−100
−1000
−1
−0.1
0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9
V
BE
, BASE−EMITTER VOLTAGE (V)
−1
−0.1
−1
I
C
, COLLECTOR CURRENT (mA)
Figure 5. V
BE(sat)
versus I
C
Figure 6. Base−Emitter Voltage
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3
HN1B01FDW1T1G, SHN1B01FDW1T1G
TYPICAL ELECTRICAL CHARACTERISTICS: NPN Transistor
280
I
C
, COLLECTOR CURRENT (mA)
6.0 mA
5.0 mA
240
200
1.0 mA
160
120
80
I
B
= 0.2 mA
40
0
0
1
2
T
A
= 25°C
3
4
5
6
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
10
1
V
CE
= 1.0 V
10
100
1000
0.5 mA
3.0 mA
2.0 mA
h
FE
, DC CURRENT GAIN
T
A
= 100°C
25°C
−25°C
100
1000
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Voltage
Figure 8. DC Current Gain
1000
T
A
= 100°C
25°C
−25°C
100
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE
(V)
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
T
A
= 100°C
0.1
25°C
−25°C
10
1
V
CE
= 6.0 V
10
100
1000
0.01
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain
Figure 10. V
CE(sat)
versus I
C
10
BASE−EMITTER SATURATION
VOLTAGE (V)
10,000
COMMON EMITTER
V
CE
= 6 V
I
B
, BASE CURRENT (mA)
1000
−25°C
100
T
A
= 100°C
25°C
1
10
T
A
= 25°C
I
C
/I
B
= 10
1
10
100
1000
1
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.1
I
C
, COLLECTOR CURRENT (mA)
V
BE
, BASE−EMITTER VOLTAGE (V)
Figure 11. V
BE(sat)
versus I
C
Figure 12. Base−Emitter Voltage
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4
HN1B01FDW1T1G, SHN1B01FDW1T1G
TYPICAL ELECTRICAL CHARACTERISTICS
10
PNP
I
C
, COLLECTOR CURRENT (A)
1
100 ms 10 ms
I
C
, COLLECTOR CURRENT (A)
1 ms
1
10
NPN
100 ms 10 ms 1 ms
Thermal Limit
0.1
Thermal Limit
0.1
0.01
0.01
0.001
0.1
Single Pulse Test at T
A
= 25°C
1
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
100
0.001
0.1
Single Pulse Test at T
A
= 25°C
1
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
100
Figure 13. PNP Safe Operating Area
Figure 14. NPN Safe Operating Area
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5
PCB设计
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