TAT2814A1L
DOCSIS 3.0 / Edge QAM Variable Gain Amplifier
Applications
•
Integrated DOCSIS 3.0 / Edge QAM Amplifier Chain
•
Forward Path Variable Gain Amplifier
Product Features
•
Meets DOCSIS 3.0 With +4 dB Typical Performance
Margin
•
< 5 Watt Nominal Power Consumption
•
45 – 1003 MHz Bandwidth
•
Low-Reflection Differential Input / Output Stages
•
18 dB Typical Return Loss Across Gain Range
•
Variable Gain Attenuator: 18 dB Typical Range
•
30 dB Typical Max Gain
•
+49 dBm Typical OIP3
•
2.7 dB Typical Noise Figure
•
Typical Input Stage Bias: +5 V, 290 mA
•
Typical Output Stage Bias: +8 V, 415 mA
48-pin 7x7mm leadless SMT Package
Functional Block Diagram
General Description
The TAT2814A1L is an RFIC for DOCSIS 3.0 Output
Sections, such as CMTS and Edge QAM. It combines a
low-reflection differential input stage, a variable gain
attenuator and an efficient output amplifier to provide
significant reduction in power consumption and PC
board space. It replaces circuitry requiring up to 10x the
board space and 2x the power.
The TAT2814A1L meets the stringent DOCSIS 3.0
output linearity specifications with extra margin to
overcome additional losses before the output connector.
The TAT2814A1L is packaged in an industry standard
7 x 7 mm 48-pin leadless SMT package and consumes
5 W between a +5 V input amplifier supply and an +8 V
output amplifier supply. The TAT2814A1L utilizes proven
GaAs pHEMT to optimize performance and cost. It
allows the designer to optimize output stage voltage to
significantly reduce power consumption in Edge QAM
applications.
.
Ordering Information
Part No.
TAT2814A1L
TAT2814A1L-EB
Description
DOCSIS 3.0 Edge QAM Variable
Gain Amplifier
Evaluation Board
Standard T / R size = 1000 pieces on a 7” reel
Datasheet: Rev. H 11-12-14
© 2014 TriQuint
-
1 of 12
-
Disclaimer: Subject to change without notice
www.triquint.com
TAT2814A1L
DOCSIS 3.0 / Edge QAM Variable Gain Amplifier
Absolute Maximum Ratings
Parameter
Storage Temperature
Device Voltage (V
DD
)
RF Input Power (single tone)
Recommended Operating Conditions
Parameter
V
DD
- Stage 1
V
PA
- Stage 2
Operating Ambient Temp.
Tj (for >10
6
hours MTTF)
Rating
−40 to +100 °C
+10 V
+10 dBm
Min
Typ
+5
+8
Max Units
V
V
°C
°C
−40
Operation of this device outside the parameter ranges
given above may cause permanent damage.
+85
150
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: V
DD
= +5 V, V
PA
= +8 V, T
AMBIENT
= +25 °C, Includes input and output balun losses
Parameter
Operational Frequency Range
Gain
Gain Variation over Temp
(1)
Gain Flatness
Gain Slope
Attenuator Range
Input Return Loss
Output Return Loss
EQAM V
OUT
Conditions
I
AGC
= 1 mA, f= 1003 MHz
Maximum gain deviation within passband within
temp. range of −40 °C to +85 °C relative to +25 °C.
Peak deviation from straight line across full band.
Max slope of best fit straight line over all attenuator
settings
Max Gain - Min Gain
I
AGC
= 1 mA
I
AGC
= 1 mA
Adjacent
(1, 2)
Four Channel ACPR
on a Single Port
Next-adjacent channel
(1, 3)
Third-adjacent channel
(1, 4)
Min
45
27.5
Typ
30
1.0
±0.25
Max
1003
32
Units
MHz
dB
dB
±0.5
dB
dB
dB
dB
dB
dBmV /
chan.
dBmV
dBm
dBm
dB
−1.4
−1.0
18
18
20
+55
+63
+56
+64
+28
+49
2.7
290
415
330
450
0.5
300
−-50
EQAM Vout
(1, 5)
Output P1dB
Output IP3
Noise Figure
1
st
Stage Current
2
nd
Stage Current
Single Channel Harmonics
Pout=+8 dBm/tone, 6 MHz tone spacing
V
DD
=+5 V
V
PA
=+5 V
Input High Voltage
mA
mA
V
uA
mA
°C/W
1.8
Power Down DC Control Pin 12)
Input Low Voltage
Input High Current
Input Low Current
−40
11.8
AGC Input Current (Pin 14)
Thermal Resistance, θjc
(6)
−1
Notes:
1. Production tested at 66 and 990 MHz.
2. Adjacent channel (750 kHz from channel block edge to 6 MHz from channel block edge) better than −60 dBc.
3. Next-adjacent channel (6 MHz from channel block edge to 12 MHz from channel block edge) better than −63 dBc.
4. Third-adjacent channel (12 MHz from channel block edge to 18 MHz from channel block edge) better than −65 dBc.
5. In each of 2N contiguous 6 MHz channels or in each of 3N contiguous 6 MHz channels coinciding with 2
nd
harmonic and with
3
rd
harmonic components, respectively (up to 1002 MHz) better than −63 dBc..
6. ϴ
jb
= (Tj
max
- T
groundslug
)/P
diss
, where P
diss
= power dissipated in the 2
nd
stage amplifier (power amplifier)
Datasheet: Rev. H 11-12-14
© 2014 TriQuint
-
2 of 12
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Disclaimer: Subject to change without notice
www.triquint.com
TAT2814A1L
DOCSIS 3.0 / Edge QAM Variable Gain Amplifier
TAT2814A1L-EB Schematic
VPR
E
L6
R
4
C
9
U
3
R
F
IN T
PU
C
15
2
SUBCKT
C
26
L5
R
11
C
3
C
1
4
48
1
2
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
SUBCKT
R
1
C
2
C
10
C
4
R
3
3
4
5
3
1
6
7
8
9
10
11
L1
VPR
E
TAT2814
13
14
15
16
17
18
19
20
21
22
23
24
31
30
29
28
27
26
25
L7
C
35
PD
1
12
C
R
16
R
7
VPR
E
SUBCKT
ID=U5
NET
="MBT
3904"
1
6
R
35
L14
L12
R
2
R
12
C
19
C
20
C
16
VAG
C
R
34
2
R
13
3
5
C
21
4
R
31
U
5
R
29
C
13
VPA
PD
1
VAG
C
L18
C
41
C
35
VPA
8
7
6
5
C
7
VAG
C
PD
1
1
2
3
4
L15
C
8
R
24
C
22
L17
G D
N
SUBCKT
VPR
E
J1
Note: R3 and R4 required for matching and stabilityof input amplifie
Datasheet: Rev. H 11-12-14
© 2014 TriQuint
-
3 of 12
-
Disclaimer: Subject to change without notice
www.triquint.com
TAT2814A1L
DOCSIS 3.0 / Edge QAM Variable Gain Amplifier
Bill of Material – TAT2814A1L-EB
Reference Des.
U1
C1, C2, C20, C21
C3, C4, C19, C26, C35
C7, C8, C22, C23,
C35, C41
C9, C10, C13, C14, C15,
C16, C17, C36, R7, R10
L1
L16, R2, R13
L5
L6, L7
L12, L14
L15, L17, L18
R1
R3, R4
R11
R12
R16
R29
R31
R34
R35
U3, U4
U5
Datasheet: Rev. H 11-12-14
© 2014 TriQuint
Value
0.01 μF
1000 pF
0.01 μF
DNP
1.8 nH
0 Ω
420 nH
560 nH
500 nH
0.9 μH
1.8 Ω
2.5 kΩ
560 Ω
1 kΩ
680 Ω
36 Ω
1.0 Ω
1.27 kΩ
150 kΩ
1:1
NPN
Description
Variable Gain Amplifier, QFN 7 x 7
Ceramic Cap, 0402, X7R, 16 V, 10%
Ceramic Cap, 0402, 5%
Ceramic Cap, 0603, X7R, 50 V,5%
No Load Parts
Ind, wirewound, 0402, 5%
Res, thin film, 0402
Ind, wirewound, 0402, 5%
Ind, wirewound, 0603, 5%
Ind, wirewound, 1206, 5%
Ind, Ferrite, 1008, 10%
Res, thin film, 0805, 1/4 W 5%
Res, thin film, 0402, 5%
Res, thin film, 0402, 5%
Thermistor, PTC, 0603, 5%
Res, thin film, 0402, 1%
Res, thin film, 0402, 1%
Res, thin film, 0402, 1%
Res, thin film, 0402, 5%
Thermistor, NTC, 0402, 5%
Transformer, 50 – 1200 MHz
Trans, dual NPN, SOT363
-
4 of 12
-
Manuf.
TriQuint
Various
Various
Various
Part Number
TAT2814A
Various
Various
Coilcraft
Coilcraft
Murata
Various
Various
Various
Various
Panasonic
Various
Various
Various
Various
Panasonic
M/A-COM
Various
0402AF-421XJLU
0603AF-561XJRU
LQH31HNR50K
ERAV33J102V
ERTJOEV154J
MABA-009210-
CT1760
Disclaimer: Subject to change without notice
www.triquint.com
TAT2814A1L
DOCSIS 3.0 / Edge QAM Variable Gain Amplifier
Typical Performance – TAT2814A1L-EB
35
Gain vs. Frequency
+85°C
+25°C
−40°C
32
28
24
Gain vs. AGC Current
Freq.=500 MHz
Temp.=+25°C
33
Gain (dB)
31
Gain (dB)
0
200
400
600
800
1000
20
16
29
27
12
8
0
8
16
24
32
40
25
Frequency (MHz)
AGC Current (mA)
14
12
Noise Figure vs. Frequency
5
Noise Figure vs. Frequency
I
AGC
=1 mA
+85°C
+25°C
−40°C
4
10
36 mA
11 mA
1 mA
NF (dB)
6
4
NF(dB)
8
21 mA
3
2
1
2
0
0
200
400
600
800
1000
0
0
200
400
600
800
1000
Frequency (MHz)
Frequency (MHz)
0
-5
Return Loss vs. Frequency
AGC Current=1 mA
Temp.=+25°C
-50
-55
-60
Harmonics at Docsis +4
-40C
+25C
+85C
|S11| , |S22| (dB)
-10
|S11|
Harmonic (dBc)
-65
-70
-75
-80
-85
-90
-95
2x330MHz
-15
-20
-25
-30
0
200
|S22|
3x66MHz
2x66MHz
3x330MHz
-100
400
600
800
1000
100
300
500
700
900
1100
Frequency (MHz)
Frequency (MHz)
Datasheet: Rev. H 11-12-14
© 2014 TriQuint
-
5 of 12
-
Disclaimer: Subject to change without notice
www.triquint.com
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