VS-30BQ040HM3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 3.0 A
FEATURES
• Very low forward voltage drop
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
DO-214AB (SMC)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• AEC-Q101 qualified
DO-214AB (SMC)
3.0 A
40 V
0.46 V
30 mA at 125 °C
150 °C
Single die
6.0 mJ
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-30BQ040HM3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3.0 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
3.0
40
1600
0.46
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-30BQ040HM3
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
L
= 115 °C, rectangular waveform
50 % duty cycle at T
L
= 104 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1.0 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
3.0
4.0
1600
90
6.0
1.0
mJ
A
A
UNITS
Revision: 18-Nov-15
Document Number: 94843
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30BQ040HM3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
3A
Maximum forward voltage drop
V
FM (1)
6A
3A
6A
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
I
RM
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.57
0.76
0.46
0.64
0.5
30
230
3.0
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Notes
(1)
(2)
SYMBOL
T
J (1)
, T
Stg
R
thJL (2)
DC operation
R
thJA
TEST CONDITIONS
VALUES
-55 to +150
12
UNITS
°C
°C/W
46
0.24
0.008
g
oz.
3F
Case style SMC (similar to DO-214AB)
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Mounted 1" square PCB
Revision: 18-Nov-15
Document Number: 94843
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30BQ040HM3
www.vishay.com
Vishay Semiconductors
100 000
I
F
- Instantaneous Forward Current (A)
10
T
J
= 150 °C
I
R
- Reverse Current (µA)
10 000
T
J
= 125 °C
1000
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
T
J
= 75 °C
100
T
J
= 50 °C
T
J
= 25 °C
10
0.1
1
0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
V
F
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
10
0
5
10
15
20
25
30
35
40
45
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
100
10
P
DM
t
1
t
2
1
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
0.001
0.01
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
10
100
0.1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 18-Nov-15
Document Number: 94843
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30BQ040HM3
www.vishay.com
Vishay Semiconductors
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
2.5
Allowable Lead Temperature (°C)
160
DC
Average Power Loss (W)
140
2.0
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
120
1.5
RMS limit
1.0
100
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
DC
0.5
80
60
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
I
FSM
- Non-Repetitive Surge Current (A)
10 000
1000
100
10
At any rated load condition
and with rated V
RRM
applied
following surge
10
100
1000
10 000
1
t
p
- Square Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 18-Nov-15
Document Number: 94843
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30BQ040HM3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
30
2
B
3
Q
4
040
5
H
6
M3
7
Vishay Semiconductors product
Current rating
B = SMC
Q = Schottky “Q” series
Voltage rating (040 = 40 V)
H = AEC-Q101 qualified
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-30BQ040HM3/9AT
PREFERRED PACKAGE CODE
9AT
MINIMUM ORDER QUANTITY
3500
PACKAGING DESCRIPTION
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95402
www.vishay.com/doc?95403
www.vishay.com/doc?95404
Revision: 18-Nov-15
Document Number: 94843
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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