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Document Number: 38-07056 Rev. *J
Page 2 of 15
CY2CC810
Pin Configuration
Figure 1. 20-pin SSOP pinout
IN
GND
Q1
VDD
Q2
GND
Q3
VDD
Q4
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
VDD
Q10
Q9
GND
Q8
VDD
Q7
GND
Q6
Q5
20 pin SOIC/SSOP
Pin Description
Pin Number
1
2, 6, 10, 13, 17
4, 8, 15, 20
3, 5, 7, 9, 11, 12, 14, 16, 18, 19
Pin Name
IN
GND
Input
Ground
Power Supply
Output
Description
LVCMOS
Power
Power
AVCMOS
V
DD
Q1... Q10
Document Number: 38-07056 Rev. *J
CY2CC810
Page 3 of 15
CY2CC810
Absolute Maximum Conditions
Parameter
[1, 2]
V
DD
V
IN
V
OUT
T
S
T
A
V
DD
ground supply voltage
Input supply voltage to ground potential
Output supply voltage to ground potential
Temperature, storage
Temperature, operating ambient
Power dissipation
Description
Min
–0.5
–0.5
–0.5
–65
–40
0.75
Max
4.6
5.8
V
DD
+ 1
150
85
Unit
V
V
V
°C
°C
W
DC Electrical Characteristics
@ 3.3 V (see
Figure 6)
Parameter
V
OH
V
OL
V
IH
V
IL
I
IH
I
IL
I
I
V
IK
I
OK
O
OFF
V
H
Description
Output high voltage
Output low voltage
Input high voltage
Input low voltage
Input high current
Input low current
Input high current
Clamp diode voltage
Continuous clamp current
Power down disable
Input hysteresis
Conditions
V
DD
= Min,
V
IN
= V
IH
or V
IL
V
DD
= Min,
V
IN
= V
IH
or V
IL
Guaranteed Logic High
Level
Guaranteed Logic Low
Level
V
DD
= Max
V
DD
= Max
V
DD
= Max,
V
IN
= V
DD
(Max)
V
DD
= Min, I
IN
= –18 mA
V
DD
= Max,
V
OUT
= GND
V
DD
= GND,
V
OUT
< 4.5 V
V
DD
= Min,
V
IN
= V
IH
or V
IL
I
OH
= –12 mA
I
OL
= 12 mA
–
–
V
IN
= 2.7 V
V
IN
= 0.5 V
–
–
–
–
–
Min
2.3
–
2
–
–
–
–
–
–
–
–
Typ
3.3
0.2
–
–
–
–
–
–0.7
–
–
80
Max
–
0.5
5.8
0.8
1
–1
20
–1.2
–50
100
Unit
V
V
V
V
A
A
A
V
mA
A
mV
Notes
1. Stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. This is intended to be a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
2. Multiple Supplies: The voltage on any input or I/O pin cannot exceed the power pin during power-up. Power supply sequencing is NOT required.
Document Number: 38-07056 Rev. *J
Page 4 of 15
CY2CC810
DC Electrical Characteristics
@ 2.5 V (see
Figure 2)
Parameter
V
OH
V
OL
V
IH
V
IL
I
IH
I
IL
I
I
V
IK
I
OK
O
OFF
V
H
Description
Output high voltage
Output low voltage
Input high voltage
Input low voltage
Input high current
Input low current
Input high current
Clamp diode voltage
Continuous clamp current
Power-down disable
Input hysteresis
Conditions
V
DD
= Min,
V
IN
= V
IH
or V
IL
V
DD
= Min,
V
IN
= V
IH
or V
IL
Guaranteed Logic High
Level
Guaranteed Logic Low
Level
V
DD
= Max
V
DD
= Max
V
DD
= Max,
V
IN
= V
DD
(Max)
V
DD
= Min, I
IN
= –18 mA
V
DD
= Max,
V
OUT
= GND
V
DD
= GND,
V
OUT
< 4.5 V
–
I
OH
= –7 mA
I
OH
= 12 mA
I
OL
= 12 mA
–
–
V
IN
= 2.4 V
V
IN
= 0.5 V
–
–
–
–
–
Min
1.8
1.6
Typ
–
–
–
Max
–
–
0.65
5.0
0.8
1
–1
20
–1.2
–50
100
–
Unit
V
V
V
V
V
A
A
A
V
mA
A
mV
1.6
–
–
–
–
–
–
–
–
–
–
–
–
–
–0.7
–
–
80
Capacitance
Parameter
Cin
Cout
Description
Input capacitance
Output capacitance
Test Conditions
V
IN
= 0 V
V
OUT
= 0 V
Min
–
–
Typ
2.5
6.5
Max
–
–
Unit
pF
pF
Thermal Resistance
Parameter
[3]
θ
JA
θ
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
20-pin SSOP
79
35
Unit
°C/W
°C/W
Note
3. These parameters are guaranteed by design and are not tested.
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