Operating Temperature Range ........................... -30°C to +85°C
Storage Temperature Range ............................ -65°C to +150°C
Soldering Temperature (reflow) .......................................+260°C
Absolute Maximum Ratings
(All voltages with respect to V
SS
, unless otherwise noted.)
V
DD18
................................................................-0.3V to +1.89V
V
DD12
.................................................................-0.3V to +1.26V
V
DDA
with respect to V
SSA
................................-0.3V to +1.89V
V
RTC
...................................................................-0.3V to +1.89V
V
DDB
....................................................................-0.3V to +3.6V
V
REF
.....................................................................-0.3V to +3.6V
32KIN, 32KOUT.........................................-0.3V to V
RTC
+ 0.2V
RSTN, SRSTN, GPIO, DP, DM, JTAG .................-0.3V to +3.6V
AIN[1:0].................................................................-0.3V to +5.5V
AIN[3:2].................................................................-0.3V to +3.6V
V
DDIO
...................................................................-0.3V to +3.6V
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
Package Thermal Characteristics
(Note 1)
TQFP
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........22°C/W
Junction-to-Case Thermal Resistance (θ
JC
) .................2°C/W
WLP
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........36°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(Limits are tested at T
A
= +25°C and T
A
= +85°C. Limits over the operating temperature range and relevant supply voltage range are
guaranteed by design and characterization. Specifications marked GBD are guaranteed by design and not production tested.)
PARAMETER
SYMBOL
V
DD18
V
DD12
V
DDA
Supply Voltage
V
RTC
V
DDB
V
DDIO
V
DDIOH
Power-Fail Reset Voltage
Power On Reset Voltage
RAM Data Retention Voltage
V
DD12
Dynamic Current,
LP3 Mode
V
RST
V
POR
V
DRV
V
DDIOH
must be ≥ V
DDIO
Monitors V
DD18
Monitors V
DD18
V
DD12
supply, retention in LP1
Measured on the V
DD12
pin and executing
code from cache memory, all inputs are tied to
V
SS
or V
DDIO
, outputs do not source/sink any
current, PMU disabled
CONDITIONS
MIN
1.71
1.14
1.71
1.71
3.04
1.71
1.71
1.1
1.5
0.93
TYP
1.8
1.2
1.8
1.8
3.3
1.8
1.8
MAX
1.89
1.26
1.89
1.89
3.60
3.60
3.60
1.70
V
V
V
µA/
MHz
V
UNITS
I
DD12_DLP3
102
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Maxim Integrated
│
3
MAX32620/MAX32621
High-Performance, Ultra-Low Power ARM
Cortex-M4 with FPU-Based Microcontroller
for Rechargeable Devices
Electrical Characteristics (continued)
(Limits are tested at T
A
= +25°C and T
A
= +85°C. Limits over the operating temperature range and relevant supply voltage range are
guaranteed by design and characterization. Specifications marked GBD are guaranteed by design and not production tested.)
PARAMETER
SYMBOL
CONDITIONS
96MHz oscillator selected as system clock,
measured on the V
DD12
pin and executing
code from cache memory, all inputs are tied to
V
SS
or V
DDIO
, outputs do not source/sink any
current
4MHz oscillator selected as system clock
measured on the V
DD12
pin and executing
code from cache memory, all inputs are tied to
V
SS
or V
DDIO
, outputs do not source/sink any
current
96MHz oscillator selected as system clock,
measured on the V
DD18
pin and executing
code from cache memory, all inputs are tied to
V
SS
or V
DDIO
, outputs do not source/sink any
current
4MHz oscillator selected as system clock,
measured on the VDD18 pin and executing
code from cache memory, all inputs are tied to
V
SS
or V
DDIO
, outputs do not source/sink any
current.
RTC disabled
RTC enabled
Measured on the V
DD12
pin, ARM in sleep
mode, PMU with two channels active
96MHz oscillator selected as system clock,
measured on the V
DD12
pin, ARM in sleep
mode, system clock stopped
4MHz oscillator selected as system clock,
measured on the V
DD12
pin, ARM in sleep
mode, system clock stopped
96MHz oscillator selected as system clock,
ARM in sleep mode, PMU with two channels
active, all inputs are tied to V
SS
or V
DDIO
,
outputs do not source/sink any current
4MHz oscillator selected as system clock,
ARM in sleep mode, PMU with two channels
active, all inputs are tied to V
SS
or V
DDIO
,
outputs do not source/sink any current
RTC disabled
RTC enabled
MIN
TYP
MAX
UNITS
96
µA
V
DD12
Current,
LP3 Mode
I
DD12_LP3
49
366
µA
33
V
DD18
Current,
LP3 Mode
I
DD18_LP3
V
RTC
Current,
LP3 Mode
V
DD12
Dynamic Current,
LP2 Mode
I
RTC_LP3
I
DD12_DLP2
1.15
1.55
23
µA
µA
µA/
MHz
96
µA
49
V
DD12
Current,
LP2 Mode
I
DD12_LP2
366
µA
33
V
DD18
Current,
LP2 Mode
I
DD18_LP2
V
RTC
Current,
LP2 Mode
I
RTC_LP2
1.15
1.55
µA
µA
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Maxim Integrated
│
4
MAX32620/MAX32621
High-Performance, Ultra-Low Power ARM
Cortex-M4 with FPU-Based Microcontroller
for Rechargeable Devices
Electrical Characteristics (continued)
(Limits are tested at T
A
= +25°C and T
A
= +85°C. Limits over the operating temperature range and relevant supply voltage range are
guaranteed by design and characterization. Specifications marked GBD are guaranteed by design and not production tested.)
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