VS-80PF(R)...(W) Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 80 A
FEATURES
80PF(R)...
80PF(R)...W
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• Designed and qualified for multiple level
DO-203AB (DO-5)
DO-203AB (DO-5)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Battery charges
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
80 A
DO-203AB (DO-5)
Single diode
• Converters
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
C
TEST CONDITIONS
VALUES
80
140
126
1500
1570
11 250
10 230
400 to 1200
-55 to +180
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
40
VS-80PF(R)...(W)
80
120
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
960
1440
9
I
RRM
MAXIMUM
AT T
J
= 150 °C
mA
Revision: 04-Dec-14
Document Number: 93526
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80PF(R)...(W) Series
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
180° conduction, half sine wave
VALUES
80
140
126
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
1500
1570
1260
Sinusoidal half wave,
initial T
J
= 150 °C
1320
11 250
10 230
7950
7200
112 500
0.73
3.0
1.40
A
2
s
V
m
V
A
2
s
A
UNITS
A
°C
A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum
I
2
t
for fusing
I
2
t
V
F(TO)
r
f
V
FM
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 220 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
Low level value of threshold voltage
Low level value of forward
slope resistance
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads, tighting on nut
(1)
Lubricated threads, tighting on nut
(1)
Allowable mounting torque
Not lubricated threads, tighting on Hexagon
(2)
Lubricated threads, tighting on Hexagon
(2)
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
-55 to +180
0.30
K/W
0.25
3.4
(30)
2.3
(20)
4.2
(37)
3.2
(28)
15.8
0.56
g
oz.
N·m
(lbf · in)
UNITS
°C
DO-203AB (DO-5)
Notes
(1)
Recommended for pass-through holes
(2)
Torque must be applicable only to Hexagon and not to plastic structure, recommended for holed heatsink
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.14
0.16
0.21
0.30
0.50
RECTANGULAR CONDUCTION
0.10
0.17
0.22
0.31
0.50
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 04-Dec-14
Document Number: 93526
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80PF(R)...(W) Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
180
170
160
80PF(R) Series
RthJC = 0.3 K/W
180
170
160
150
30°
80PF(R) Series
RthJC (DC) = 0.3 K/W
Conduction Angle
Conduction Period
150
140
180°
130
120
110
0
30°
60°
120°
90°
140
130
120
0
20
60°
90°
120°
180°
DC
10 20 30 40 50 60 70 80 90
Average Forward Current (A)
40
60
80
100 120 140
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Allowable Forward Power Loss (W)
140
120
100
80
60
40
20
0
0
180°
0.
0.5
0.3
120°
90°
60°
30°
RMS Limit
K/
W
7
K/
W
/W
1K
1.5
2K
K/W
K/W
/W
/W
3K
Conduction Angle
80PF(R) Series
Tj = 180°C
5 K/W
0
10 20 30 40 50 60 70 80
Average Forward Current (A)
30
60
90
120
150
180
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Maximum Allowable Forward Power Loss (W)
140
120
100
80
DC
180°
120°
90°
60°
30°
0.5
K/
W
0.3
0.
7
1K
1.5
2K
K/W
K/
W
/W
K/W
/W
/W
60
RMS Limit
40
20
0
0
20
40
60
80
Conduction Period
3K
5 K/W
80PF(R) Series
Tj = 180°C
0
100 120 140
30
60
90
120
150
180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 04-Dec-14
Document Number: 93526
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80PF(R)...(W) Series
www.vishay.com
Vishay Semiconductors
1000
Peak Haf Sine Wave Forward Current (A)
1400
1300
1200
1100
1000
900
800
700
600
500
400
1
Rated Vrrm Applied Following Surge.
Initial Tj = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
100
10
Tj = 25°C
Tj = 180°C
80PF(R) Series
80PF(R) Series
1
10
100
0
1
2
3
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
Peak Haf Sine Wave Forward Current (A)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
1400
Initial Tj = 150°C
No Voltage Reapplied
1200
Rated Vrrm Reapplied
Transient Thermal Impedance Z
thJC
(K/W)
1600
1
Steady State Value
RthJC = 0.3 K/W
(DC Operation)
1000
800
600
400
80PF(R) Series
0.1
80PF(R) Series
200
0.01
0.1
Pulse Train Duration (s)
1
0.01
0.0001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 04-Dec-14
Document Number: 93526
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80PF(R)...(W) Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
80
2
-
-
PF
3
R
4
120
5
W
6
Vishay Semiconductors product
80 = Standard device
82 = Isolated lead on standard terminal
with silicone sleeve available for 1200 V only
(red = Reverse polarity)
(blue = Normal polarity)
3
4
5
6
-
-
-
-
PF = Plastic package
None = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = Standard terminal
(see dimensions for 80PF(R)... - link at the end of datasheet)
W = Wire terminal
(see dimensions for 80PF(R)...W - link at the end of datasheet)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95345
Revision: 04-Dec-14
Document Number: 93526
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
