1N5615US thru 1N5623US
SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “fast recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/429 and is ideal for high-reliability applications where a failure cannot
be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in axial-leaded package configurations for thru-hole mounting (see
separate data sheet for 1N5615 thru 1N5623). Microsemi also offers numerous
other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both
through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
Package “A”
or D-5A
FEATURES
•
Surface mount package series equivalent to the
JEDEC registered 1N5615 to 1N5623 series
•
Voidless hermetically sealed glass package
•
Triple-Layer Passivation
•
Internal “Category
I”
Metallurgical bonds
•
Working Peak Reverse Voltage 200 to 1000 Volts.
•
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/429
•
Axial-leaded equivalents also available (see separate
data sheet for 1N5615 thru 1N5623)
•
•
•
•
•
•
•
•
APPLICATIONS / BENEFITS
Fast recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
•
•
•
•
•
•
Junction & Storage Temperature: -65
o
C to +175
o
C
Thermal Resistance: 13
o
C/W junction to end cap
Thermal Impedance: 4.5
o
C/W @ 10 ms heating time
Average Rectified Forward Current (I
O
): 1.0 Amps @
T
A
= 55ºC
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
•
•
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead (Sn/Pb) finish.
MARKING & POLARITY: Cathode band only
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 193 mg
See package dimensions and recommended pad
layout on last page
REVERSE
CURRENT
(MAX.)
I
R
@ V
RWM
o
•
•
•
•
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
200
400
600
800
1000
MINIMUM
BREAKDOWN
VOLTAGE
V
BR
@ 50μA
VOLTS
220
440
660
880
1100
AVERAGE
RECTIFIED
CURRENT
I
O
@ T
A
(NOTE 1)
AMPS
o
o
50 C
100 C
.750
1.00
.750
1.00
.750
1.00
.750
1.00
.750
1.00
FORWAR
D
VOLTAGE
(MAX.)
V
F
@ 3A
VOLTS
.8 MIN.
CAPACITANCE
(MAX.)
C @ V
R
=
12 V
f=1 MHz
pF
45
35
25
20
15
MAXIMUM
SURGE
CURRENT
I
FSM
(NOTE 2)
AMPS
25
25
25
25
25
REVERSE
RECOVERY
(MAX.)
(NOTE 3)
t
rr
ns
150
150
250
300
500
1N5615US – 1N5623US
1N5615US
1N5617US
1N5619US
1N5621US
1N5623US
1.6
MAX.
25 C
.5
.5
.5
.5
.5
μA
o
100 C
25
25
25
25
25
NOTE 1:
From 1 Amp at T
A
= 55
o
C, derate linearly at 5.56 mA/
o
C to 0.75 Amp at T
A
= 100
o
C. From T
A
= 100
o
C,
derate linearly at 7.5 mA/
o
C to 0 Amps at T
A
= 200
o
C. These ambient ratings are for PC boards where thermal
o
resistance from mounting point to ambient is sufficiently controlled where T
J(max)
does not exceed 175 C.
NOTE 2:
T
A
= 100
o
C, f = 60 Hz, I
O
= 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3:
I
F
= 0.5A, I
RM
= 1A, I
R(REC)
= 0.250 A
Copyright
©
2009
10-06-2009 REV E; SD47A.pdf
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N5615US thru 1N5623US
SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
Symbol
V
BR
V
RWM
I
O
V
F
I
R
C
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range
Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave
input and a 180 degree conduction angle
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
GRAPHS
FIGURE 1
TYPICAL REVERSE CURRENT vs V
R
FIGURE 2
TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT
1N5615US – 1N5623US
Copyright
©
2009
10-06-2009 REV E; SD47A.pdf
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N5615US thru 1N5623US
SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
PACKAGE DIMENSIONS AND PAD LAYOUT
WWW .
Microsemi
.C
OM
NOTE: This Package Outline has also previously
been identified as “D-5A”
INCHES
MIN
BD
BL
ECT
S
.097
.185
.019
.003
MAX
.103
.200
.028
---
MIN
2.46
4.70
0.48
0.08
mm
MAX
2.62
5.08
0.71
---
A
B
C
PAD LAYOUT
INCHES
0.246
0.067
0.105
mm
6.25
1.70
2.67
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
1N5615US – 1N5623US
Copyright
©
2009
10-06-2009 REV E; SD47A.pdf
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
