PD - 97482
AUTOMOTIVE GRADE
Features
l
l
l
l
l
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AUIRF1324
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
24V
1.2m
:
1.5m
:
353A
195A
HEXFET
®
Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
c
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switch-
ing speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
G
S
D
G
TO-220AB
AUIRF1324
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
d
Ãd
e
f
e
353
249
195
1412
300
2.0
± 20
270
See Fig. 14, 15, 22a, 22b
0.46
-55 to + 175
300
10lb in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
x
x
j
Parameter
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
03/29/2010
AUIRF1324
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
24
–––
–––
2.0
180
–––
–––
–––
–––
–––
–––
22
1.2
–––
–––
2.3
–––
–––
–––
–––
Conditions
–––
V V
GS
= 0V, I
D
= 250µA
––– mV/°C Reference to 25°C, I
D
= 5.0mA
1.5
mΩ V
GS
= 10V, I
D
= 195A
4.0
V V
DS
= V
GS
, I
D
= 250µA
–––
S V
DS
= 10V, I
D
= 195A
–––
Ω
20
µA V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
250
200
nA V
GS
= 20V
V
GS
= -20V
-200
g
d
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Min. Typ. Max. Units
160
84
49
76
17
190
83
120
7590
3440
1960
4700
4490
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 195A
V
DS
= 12V
V
GS
= 10V
I
D
= 195A, V
DS
=0V, V
GS
= 10V
V
DD
= 16V
I
D
= 195A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 24V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 19V , See Fig. 11
V
GS
= 0V, V
DS
= 0V to 19V
–––
–––
–––
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related) –––
Effective Output Capacitance (Time Related)
–––
g
g
ns
pF
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
i
h
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
––– 353
–––
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 195A, V
GS
= 0V
V
R
= 20V,
T
J
= 25°C
T
J
= 125°C
I
F
= 195A
T
J
= 25°C
di/dt = 100A/µs
T
J
= 125°C
T
J
= 25°C
D
A
Ãd
1412
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
46
–––
ns
–––
71
–––
––– 160 –––
nC
––– 430 –––
–––
7.7
–––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
S
g
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.014mH
R
G
= 25Ω, I
AS
= 195A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
≤
195A, di/dt
≤
450 A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C
2
www.irf.com
AUIRF1324
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
D2Pak
TO-262
MSL1
N/A
Class M4
AEC-Q101-002
Class H3A
AEC-Q101-001
Class C5
AEC-Q101-005
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device Model
RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF1324
10000
≤
60µs PULSE WIDTH
Tj = 25°C
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10000
≤
60µs PULSE WIDTH
Tj = 175°C
ID, Drain-to-Source Current (A)
TOP
ID, Drain-to-Source Current (A)
1000
1000
BOTTOM
100
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10
100
1
4.0V
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
4.0V
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.0
ID = 195A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
T J = 25°C
1.5
1.0
1
VDS = 15V
≤60µs
PULSE WIDTH
2
3
4
5
6
7
8
9
0.1
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 195A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 19V
VDS= 12V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
4
www.irf.com
AUIRF1324
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1msec
100
Limited by
package
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.0
0.5
1.0
1.5
1
10
VDS, Drain-to-Source Voltage (V)
100
VSD, Source-to-Drain Voltage (V)
100
T J = 175°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
VGS = 0V
1.0
DC
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Limited By Package
Fig 8.
Maximum Safe Operating Area
32
Id = 5mA
30
ID, Drain Current (A)
28
26
24
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
2.0
1.8
1.6
1.4
Fig 10.
Drain-to-Source Breakdown Voltage
1200
EAS , Single Pulse Avalanche Energy (mJ)
1000
800
600
400
200
0
ID
TOP
44A
83A
BOTTOM 195A
Energy (µJ)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5
0
5
10
15
20
25
30
25
50
75
100
125
150
175
Fig 11.
Typical C
OSS
Stored Energy
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
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5
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