RUR1S1560S
Data Sheet
November 2013
15 A, 600 V, Ultrafast Diode
The RUR1S1560S is an ultrafast diode with low forward
voltage drop. This device is intended for use as freewheeling
and clamping diodes in a variety of switching power supplies
and other power switching applications. It is specially suited
for use in switching power supplies and industrial
application.
Features
• Ultrafast Recovery
t
rr
= 60 ns (@ I
F
= 15 A)
• Max Forward Voltage, V
F
= 1.5 V (@ T
C
= 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RUR1S1560S
PACKAGE
TO-263-3L
BRAND
RUR1560
Packaging
JEDEC TO-263
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in tape and reel, i.e. RUR1S1560S9A.
CATHODE
Symbol
K
ANODE
A
Absolute Maximum Ratings
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
pkg
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
RUR1S1560S
600
600
600
15
30
200
100
20
-55 to 175
300
260
UNIT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Repetitive Peak Surge Current (20 kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)
V
V
V
A
A
A
W
mJ
o
C
o
C
o
C
Power Dissipation
Avalanche Energy (1 A, 40 mH)
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10s, See Techbrief TB334
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
THERMAL SPECIFICATIONS
R
θJC
R
θJA
NOTES:
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1.5
60
o
C/W
o
C/W
©2001 Fairchild Semiconductor Corporation
RUR1S1560S9A
Rev.
C1
1
www.fairchildsemi.com
RUR1S1560S
Electrical Specifications
SYMBOL
V
F
I
F
= 15 A
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
20
30
15
17
MAX
1.5
1.2
100
500
55
60
-
-
-
-
UNIT
V
V
µA
µA
ns
ns
ns
ns
ns
ns
I
F
= 15 A, T
C
= 150
o
C
I
R
V
R
= 600 V
V
R
= 600 V, T
C
= 150
o
C
t
rr
I
F
= 1 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
I
F
= 15 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
t
a
I
F
= 1 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
I
F
= 15 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
t
b
I
F
= 1 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
I
F
= 15 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
T
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
pw = pulse width.
D = duty cycle.
©2001 Fairchild Semiconductor Corporation
RUR1S1560S9A
Rev.
C1
2
www.fairchildsemi.com
RUR1S1560S
Typical Performance Curves
100.0
200
100
T
J
= 150
o
C
I
F
, FORWARD CURRENT (A)
I
R
, REVERSE CURRENT (µA)
10.0
T
J
= 150
o
C
10
1
T
J
= 100
o
C
1.0
T
J
= 100
o
C
T
J
= 25
o
C
0.1
0.10
0.010
T
J
= 25
o
C
0.001
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
100
200
300
400
500
600
V
F
, FORWARD VOLTAGE DROP (V)
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD VOLTAGE vs FORWARD CURRENT
CHARACTERISTIC
80
70
t, RECOVERY TIMES (ns)
FIGURE 2. REVERSE VOLTAGE vs REVERSE CURRENT
CHARACTERISTIC
16
I
F(AVG)
, AVERAGE CURRENT (A)
14
12
10
SQUARE WAVE
8
6
4
2
0
140
145
150
155
160
165
170
175
180
T
C
, CASE TEMPERATURE (
o
C)
DC
60
50
40
t
rr
30
20
10
0
1
t
a
t
b
10
I
F
, FORWARD CURRENT (A)
100
FIGURE 3. 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs
FORWARD CURRENT
FIGURE 4. 6. TYPICAL CURRENT DERATING CURVE vs
CASE TEMPERATURE
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
MOS IRF840
-
0.25 I
RM
I
RM
FIGURE 5. t
rr
TEST CIRCUIT
FIGURE 6. t
rr
WAVEFORMS AND DEFINITIONS
©2001 Fairchild Semiconductor Corporation
RUR1S1560S9A
Rev.
C1
3
www.fairchildsemi.com
RUR1S1560S
Test Circuits and Waveforms
I = 1A
L = 40mH
R < 0.1Ω
V
DD
= 50V
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I
L
I V
I
L
V
AVL
(Continued)
-
t
0
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2001 Fairchild Semiconductor Corporation
RUR1S1560S9A
Rev.
C1
4
www.fairchildsemi.com
RUR1S1560S
—
Ultrafast Diode
Mechanical Dimensions
Figure 9. TO-263 2L (D
2
-
PAK) - 2LD,TO263, SURFACE MOUNT
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002.
©2001 Fairchild Semiconductor Corporation
RUR1S1560S9A
Rev.
C1
5
www.fairchildsemi.com
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