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BC857BTT1

产品描述Bipolar Transistors - BJT 100mA 50V PNP
产品类别分立半导体    晶体管   
文件大小104KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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BC857BTT1概述

Bipolar Transistors - BJT 100mA 50V PNP

BC857BTT1规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅含铅
厂商名称ON Semiconductor(安森美)
零件包装代码SC-75
包装说明CASE 463-01, SC-75, 3 PIN
针数3
制造商包装代码463-01
Reach Compliance Codenot_compliant
ECCN代码EAR99
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压45 V
配置SINGLE
最小直流电流增益 (hFE)220
JESD-30 代码R-PDSO-G3
JESD-609代码e0
湿度敏感等级1
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)240
极性/信道类型PNP
最大功率耗散 (Abs)0.125 W
认证状态Not Qualified
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间30
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz

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BC857BTT1G
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−416/SC−75 which is
designed for low power surface mount applications.
Features
http://onsemi.com
COLLECTOR
3
1
BASE
This is a Pb−Free Device
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Continuous
Collector Current
Peak
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
C
Max
−45
−50
−5.0
−100
−200
Unit
V
V
V
mAdc
mAdc
1
3
2
2
EMITTER
CASE 463
SOT−416
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommen-
ded Operating Conditions is not implied. Extended exposure to stresses
above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1)
T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
1. FR−4 @ min pad.
2. FR−4 @ 1.0
×
1.0 in pad.
Symbol
P
D
Max
200
1.6
R
qJA
P
D
600
Unit
mW
mW/°C
°C/W
MARKING DIAGRAM
3F
G
G
3F = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary
depending upon manufacturing location.
300
2.4
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
400
−55
to
+150
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
June, 2013
Rev. 3
1
Publication Order Number:
BC857BTT1/D
M

 
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