Freescale Semiconductor
Technical Data
Document Number: MRF6P24190H
Rev. 3, 2/2009
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for large - signal output applications at 2450 MHz. Device
is suitable for use in industrial, medical and scientific applications.
•
Typical CW Performance at 2450 MHz, V
DD
= 28 Volts, I
DQ
= 1900 mA,
P
out
= 190 Watts
Power Gain — 13.2 dB
Drain Efficiency — 46.2%
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P24190HR6
2450 MHz, 190 W, 28 V
CW
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
CW
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
250
1.3
Unit
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 100°C, 160 W CW
Case Temperature 83°C, 40 W CW
Symbol
R
θJC
Value
(2,3)
0.22
0.24
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006-2009. All rights reserved.
MRF6P24190HR6
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
III (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(3)
(V
DD
= 28 Vdc, I
D
= 1900 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.5
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2
2.8
0.21
3
4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1900 mA, P
out
= 40 W Avg., f = 2390 MHz, 2 - Carrier
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3 measured in
3.84 MHz Bandwidth @
±10
MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
G
ps
η
D
IM3
ACPR
IRL
13
22
—
—
—
14
23.5
- 37.5
- 41
- 13
16
—
- 35
- 38
—
dB
%
dBc
dBc
dB
MRF6P24190HR6
2
RF Device Data
Freescale Semiconductor
+
R1
V
BIAS
+
C12
+
C11
C9
B2
Z4
RF
INPUT Z1
Z2
Z3
Z5
C2
Z17
Z15
C4
R2
V
BIAS
+
C16
+
C15
C13
B4
C8
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14
Z15
0.340″
0.080″
0.895″
1.736″
0.151″
0.505″
0.570″
0.072″
0.078″
0.664″
0.680″
x 0.081″
x 0.526″
x 0.135″
x 0.074″
x 0.074″
x 0.081″
x 0.282″
x 0.500″
x 0.500″
x 0.050″
x 0.050″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z16, Z17
Z18, Z19
Z20, Z21
Z22
Z23
Z24
Z25
Z26
Z27
Z28, Z29
PCB
C22
C23
C24
C25 C26
C6
+
C28
C14
B3
Z29
Z19
Z21
Z23
C1
DUT
Z7
Z9
Z11
Z13
Z6
Z8
Z10
C5
Z14
Z12
C3
Z16
C10
B1
Z28
Z18
Z20
Z22
C7
C17
C18
C19
C20 C21
C27
V
SUPPLY
Z24
Z25
Z26
RF
OUTPUT
Z27
V
SUPPLY
0.189″ x 0.782″ Microstrip
0.321″ x 0.782″ Microstrip
0.630″ x 0.081″ Microstrip
0.150″ x 0.081″ Microstrip
1.728″ x 0.085″ Microstrip
0.122″ x 0.135″ Microstrip
0.250″ x 0.300″ Microstrip
0.563″ x 0.135″ Microstrip
0.380″ x 0.081″ Microstrip
0.305″ x 0.057″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6P24190HR6 Test Circuit Schematic — 2450 MHz
Table 5. MRF6P24190HR6 Test Circuit Component Designations and Values
Part
B1, B2, B3, B4
C1, C2, C3, C4
C5, C6, C7, C8
C9, C13
C10, C14, C17, C22
C11, C15
C12, C16
C18, C19, C20, C21, C23,
C24, C25, C26
C27, C28
R1, R2
Ferrite Beads
5.1 pF, Chip Capacitors
5.6 pF, Chip Capacitors
0.01
μF,
100 V Chip Capacitors
2.2
μF,
50 V Chip Capacitors
22
μF,
25 V Tantalum Capacitors
47
μF,
16 V Tantalum Capacitors
10
μF,
50 V Chip Capacitors
330
μF,
63 V Electrolytic Capacitors
240
Ω,
1/4 W Chip Resistors
Description
Part Number
2508051107Y0
ATC100B5R1CT500XT
ATC100B5R6CT500XT
C1825C103J1RAC
C1825C225J5RAC
T491D226K025AT
T491D476K016AT
GRM55DR61H106KA88B
NACZF331M63V
CRCW12062400FKEA
Manufacturer
Fair - Rite
ATC
ATC
Kemet
Kemet
Kemet
Kemet
Murata
Nippon
Vishay
MRF6P24190HR6
RF Device Data
Freescale Semiconductor
3
R1
C12 C11
+
+
C10*
C9*
C20 C21
C27
+
+
B1
B2
C5
C17 C18 C19
C7
C3
C1
CUT OUT AREA
C2
C4
MRF6P24190H
Rev. 1.0
C6
B3
B4
C8
C22 C23 C24
R2
C16 C15
C14* C13*
+
+
C28
C25 C26
*Stacked
Figure 2. MRF6P24190HR6 Test Circuit Component Layout — 2450 MHz
MRF6P24190HR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 2450 MHz
14.5
14
G
ps
, POWER GAIN (dB)
13.5
13
12.5
12
11.5
11
10.5
10
100
P
out
, OUTPUT POWER (WATTS) CW
η
D
V
DD
= 12 V
30 V
32 V
28 V
32 V
20
30 V
15
10
500
I
DQ
= 1900 mA
f = 2450 MHz
G
ps
50
45
G
ps
, POWER GAIN (dB)
40
35
30
25
η
D
, DRAIN EFFICIENCY (%)
14.5
14
13.5
13
12.5
12
11.5
11
10.5
10
V
DD
= 28 V
f = 2450 MHz
100
P
out
, OUTPUT POWER (WATTS) CW
300
1500 mA
1600 mA
G
ps
1900 mA
2200 mA
2100 mA
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power
14.5
G
ps
14
G
ps
, POWER GAIN (dB)
13.5
13
12.5
12
11.5
11
10.5
10
100
η
D
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
50
45
40
35
30
25
V
DD
= 28 V
I
DQ
= 1900 mA
f = 2450 MHz
20
15
10
η
D
, DRAIN EFFICIENCY (%)
P
out
, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency
versus CW Output Power
10
8
10
7
MTTF (HOURS)
10
6
10
5
10
4
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 28 Vdc, P
out
= 190 W CW, and
η
D
= 46.2%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 6. MTTF versus Junction Temperature
MRF6P24190HR6
RF Device Data
Freescale Semiconductor
5
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