FEDR27V852E-01-01
1
Semiconductor
MR27V852E
524,288–Word
×
16–Bit or 1,048,576–Word
×
8–Bit
8–Word x 16-Bit or 16–Word x 8-Bit Page Mode One Time PROM
This version:
Jan. 2001
GENERAL DESCRIPTION
The MR27V852E is a 8 Mbit electrically One Time Programmable Read-Only Memory with page mode. Its
configuration can be electrically switched between 524,288-word
×
16-bit and 1,048,576-word
×
8-bit by the state
of the
BYTE
pin. The MR27V852E supports high speed asynchronous read operation using a single 3.3V power
supply.
FEATURES
· 524,288-word
×
16-bit/1,048,576-word
×
8-bit electrically switchable configuration
· Page size of 8-word x 16-Bit or 16-word x 8-Bit
· +3.3 V power supply
· Access time
Random access mode 100 ns MAX
Page access mode
30 ns MAX
· Operating current
80 mA MAX
· Standby current
50
µA
MAX
· Input/Output TTL compatible
· Tri-state output
· Packages:
42-pin plastic DIP (DIP42-P-600-2.54)
(Product Name : MR27V852ERA)
42-pin plastic SOJ (SOJ42-P-400-1.27)
(Product Name : MR27V852EJA)
1/13
FEDR27V852E-01-01
1
Semiconductor
MR27V852E
PIN CONFIGURATION (TOP VIEW)
A18
1
A17
2
A7
3
A6
4
A5
5
A4
6
A3
7
A2
8
A1
9
A0
10
CE
11
V
SS
12
OE
13
D0
14
D8
15
D1
16
D9
17
D2
18
D10
19
D3
20
D11
21
42-pin DIP
42
NC
41
A8
40
A9
39
A10
38
A11
37
A12
36
A13
35
A14
34
A15
33
A16
32
BYTE/
V
PP
31
V
SS
30
D15/A–1
29
D7
28
D14
27
D6
26
D13
25
D5
24
D12
23
D4
22
V
CC
A18
1
A17
2
A7
3
A6
4
A5
5
A4
6
A3
7
A2
8
A1
9
A0
10
CE
11
V
SS
12
OE
13
D0
14
D8
15
D1
16
D9
17
D2
18
D10
19
D3
20
D11
21
42-pin SOJ
42
NC
41
A8
40
A9
39
A10
38
A11
37
A12
36
A13
35
A14
34
A15
33
A16
32
BYTE/
V
PP
31
V
SS
30
D15/A–1
29
D7
28
D14
27
D6
26
D13
25
D5
24
D12
23
D4
22
V
CC
Pin name
D15/A–1
A0 to A18
D0 to D14
CE
OE
BYTE/V
PP
V
CC
V
SS
NC
Address input
Data output
Chip enable
Output enable
Functions
Data output/Address input
Mode switch/Program power supply voltage
Power supply voltage
GND
Non connection
2/13
FEDR27V852E-01-01
1
Semiconductor
MR27V852E
BLOCK DIAGRAM
A–1
× 8/× 16 Switch
CE
CE
OE
OE
BYTE/V
PP
PGM
Column Decoder
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
Row Decoder
Memory Cell Matrix
524,288 × 16-Bit or 1,048,576× 8-Bit
Address Buffer
Multiplexer
Output Buffer
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D12
D14
D15
D11
D13
In 8-bit output mode, these pins
are placed in a high-Z state and
pin D15 functions as the A-1
address pin.
FUNCTION TABLE
Mode
Read (16-Bit)
Read (8-Bit)
Output disable
Standby
Program
Program inhibit
Program verify
CE
L
L
L
H
L
H
H
OE
L
L
H
∗
H
H
L
9.75 V
4.0 V
BYTE/V
PP
H
L
H
L
H
L
3.3 V
D
OUT
V
CC
D0 to D7
D8 to D14
D
OUT
Hi–Z
Hi–Z
Hi–Z
D
IN
Hi–Z
D
OUT
L/H
∗
∗
D15/A–1
∗:
Don’t Care (H or L)
3/13
FEDR27V852E-01-01
1
Semiconductor
MR27V852E
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating temperature under bias
Storage temperature
Input voltage
Output voltage
Power supply voltage
Program power supply voltage
Power dissipation per package
Symbol
Ta
Tstg
V
I
V
O
V
CC
V
PP
P
D
—
relative to V
SS
Condition
—
Value
0 to 70
–55 to 125
–0.5 to V
CC
+0.5
–0.5 to V
CC
+0.5
–0.5 to 5
–0.5 to 11.5
1.0
Unit
°C
°C
V
V
V
V
W
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter
V
CC
power supply voltage
V
PP
power supply voltage
Input “H” level
Input “L” level
Symbol
V
CC
V
PP
V
IH
V
IL
V
CC
= 3.0 to 3.6 V
Condition
Min.
3.0
–0.5
2.2
–0.5∗∗
Typ.
—
—
—
—
Max.
3.6
V
CC
+0.5
V
CC
+0.5∗
0.6
Unit
V
V
V
V
Voltage is relative to V
SS
.
∗
: Vcc+1.5 V(Max.) when pulse width of overshoot is less than 10 ns.
∗∗
: -1.5 V(Min.) when pulse width of undershoot is less than 10 ns.
4/13
FEDR27V852E-01-01
1
Semiconductor
MR27V852E
ELECTRICAL CHARACTERISTICS
DC Characteristics
(V
CC
= 3.3 V ±0.3 V, Ta = 0 to 70°C)
parameter
Input leakage current
Output leakage current
V
CC
power supply current
(Standby)
V
CC
power supply current
(Read)
V
PP
power supply current
Input “H” level
Input “L” level
Output “H” level
Output “L” level
Symbol
I
LI
I
LO
I
CCSC
I
CCST
I
CCA
I
PP
V
IH
V
IL
V
OH
V
OL
Condition
V
I
= 0 to V
CC
V
O
= 0 to V
CC
CE
= V
CC
CE
= V
IH
CE
= V
IL
,
OE
= V
IH
tc = 100 ns
V
PP
= V
CC
—
—
I
OH
= –2 mA
I
OL
= 2.1 mA
Min.
—
—
—
—
—
—
2.2
–0.5∗∗
2.4
—
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
10
10
50
1
80
10
V
CC
+0.5∗
0.6
—
0.4
Unit
µA
µA
µA
mΑ
mA
µA
V
V
V
V
Voltage is relative to V
SS
.
∗
: Vcc+1.5 V(Max.) when pulse width of overshoot is less than 10 ns.
∗∗
: -1.5 V(Min.) when pulse width of undershoot is less than 10 ns.
AC Characteristics
(V
CC
= 3.3 V ±0.3 V, Ta = 0 to 70°C)
Parameter
Address cycle time
Address access time
Page cycle time
Page access time
CE
access time
OE
access time
Output disable time
Output hold time
Symbol
t
C
t
ACC
t
PC
t
PAC
t
CE
t
OE
t
CHZ
t
OHZ
t
OH
Condition
—
CE
=
OE
= V
IL
—
—
OE
= V
IL
CE
= V
IL
OE
= V
IL
CE
= V
IL
CE
=
OE
= V
IL
Min.
100
—
30
—
—
—
0
0
0
Max.
—
100
—
30
100
30
30
25
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Measurement conditions
Input signal level--------------------------------
0 V/3 V
Input timing reference level ------------------
0.8 V/2.0 V
Output load --------------------------------------
100 pF
Output timing reference level----------------
0.8 V/2.0 V
5/13
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
