VS-GP300TD60S
www.vishay.com
Vishay Semiconductors
Dual INT-A-PAK Low Profile “Half Bridge” (Trench PT IGBT), 300 A
Proprietary Vishay IGBT Silicon “L Series”
FEATURES
• Trench PT IGBT technology
• Low V
CE(on)
• Square RBSOA
• HEXFRED
®
antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al
2
O
3
DBC
• UL approved file E78996
Dual INT-A-PAK Low Profile
• Designed for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
CES
I
C
DC at T
C
= 104 °C
V
CE(on)
(typical) at 300 A, 25 °C
Speed
Package
Circuit configuration
600 V
300 A
1.30 V
DC to 1 kHz
Dual INT-A-PAK low profile
Half bridge
BENEFITS
• Increased operating efficiency
• Performance optimized as output inverter stage for TIG
welding machines
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate to emitter voltage
Maximum power dissipation (IGBT)
RMS isolation voltage
Operating junction and storage temperature range
SYMBOL
V
CES
I
C (1)
I
CM
I
LM
I
F
V
GE
P
D
V
ISOL
T
J
, T
Stg
T
C
= 25 °C
T
C
= 80 °C
Any terminal to case (V
RMS
t = 1 s, T
J
= 25 °C)
T
C
= 25 °C
T
C
= 80 °C
T
C
= 25 °C
T
C
= 80 °C
TEST CONDITIONS
MAX.
600
580
400
800
800
219
145
± 20
1136
636
3500
-40 to +150
V
W
V
°C
A
UNITS
V
Note
(1)
Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals
Revision: 11-Dec-17
Document Number: 95767
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GP300TD60S
www.vishay.com
Vishay Semiconductors
SYMBOL
V
BR(CES)
TEST CONDITIONS
V
GE
= 0 V, I
C
= 500 μA
V
GE
= 15 V, I
C
= 150 A
V
GE
= 15 V, I
C
= 300 A
V
GE
= 15 V, I
C
= 150 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 300 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 6.4 mA
V
CE
= V
GE
, I
C
= 6.4 mA, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 6.4 mA, (25 °C to 125 °C)
V
CE
= 20 V, I
C
= 50 A
V
CE
= 20 V, I
C
= 300 A
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C
I
FM
= 150 A
I
FM
= 300 A
I
FM
= 150 A, T
J
= 125 °C
I
FM
= 300 A, T
J
= 125 °C
V
GE
= ± 20 V
MIN.
600
-
-
-
-
4.9
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
1.12
1.30
1.03
1.26
6.0
3.4
-26
67
11.4
4.0
100
1.31
1.56
1.28
1.63
-
MAX.
-
1.21
1.45
-
-
8.8
-
-
-
-
150
-
1.41
1.75
-
-
± 500
nA
V
mV/°C
S
V
μA
V
UNITS
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
V
CE(on)
Gate threshold voltage
V
GE(th)
Temperature coefficient of threshold voltage
V
GE(th)
/T
Forward transconductance
Transfer characteristics
Collector to emitter leakage current
g
fe
V
GE
I
CES
Diode forward voltage drop
V
FM
Gate to emitter leakage current
I
GES
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
SYMBOL
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
RBSOA
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
T
J
= 150 °C, I
C
= 800 A, V
CC
= 300 V
V
P
= 600 V, R
g
= 1.5
V
GE
= 15 V to 0 V,
L = 500 μH
I
F
= 300 A, R
g
= 1.5
,
V
CC
= 300 V, T
J
= 25 °C
I
F
= 300 A, R
g
= 1.5
,
V
CC
= 300 V, T
J
= 125 °C
-
-
-
-
-
-
I
C
= 300 A, V
CC
= 300 V, V
GE
= 15 V,
R
g
= 1.5
,
L = 500 μH, T
J
= 125 °C
I
C
= 300 A, V
CC
= 300 V, V
GE
= 15 V,
R
g
= 1.5
,
L = 500 μH, T
J
= 25 °C
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
6.0
33
39
503
214
600
547
7.2
55.2
62.4
476
209
807
918
Fullsquare
119
99
7.3
165
127
13
-
-
-
-
-
-
ns
A
μC
ns
A
μC
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
mJ
ns
mJ
UNITS
Revision: 11-Dec-17
Document Number: 95767
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GP300TD60S
www.vishay.com
Vishay Semiconductors
SYMBOL
T
J
, T
Stg
IGBT
diode
case to heatsink: M6 screw
R
thJC
R
thCS
MIN.
-40
-
-
-
4
2
-
TYP.
-
-
-
0.05
-
-
270
MAX.
150
0.11
0.4
-
6
5
-
Nm
g
°C/W
UNITS
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction and storage temperature range
Junction to case per leg
Case to sink per module
Mounting torque
Weight
case to terminal 1, 2, 3: M5 screw
160
600
500
400
DC
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
Allowable Case Temperature (°C)
140
120
100
80
60
40
20
0
0
100
200
300
400
500
600
700
I
C
(A)
300
200
100
0
V
GE
= 9 V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
I
C
- Continuous Collector Current (A)
Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
V
CE
(V)
Fig. 3 - Typical IGBT Output Characteristics, T
J
= 125 °C
600
500
1.6
1.5
400 A
1.4
1.3
300 A
400
V
CE
(V)
I
C
(A)
1.2
1.1
1.0
100 A
300
200
T
J
= 150 °C
100
T
J
= 25 °C
T
J
= 125 °C
0.9
0.8
0
0
0.3
0.6
0.9
0.7
1.2
1.5
1.8
2.1
20
40
60
80
100
120
140
160
V
CE
(V)
Fig. 2 - Typical IGBT Output Characteristics, V
GE
= 15 V
T
J
(°C)
Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature
Revision: 11-Dec-17
Document Number: 95767
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GP300TD60S
www.vishay.com
Vishay Semiconductors
10
T
J
= 150 °C
1
T
J
= 125 °C
300
V
CE
= 20 V
250
200
I
CES
(mA)
0.1
I
C
(A)
150
T
J
= 125 °C
100
T
J
= 25 °C
50
0
3
4
5
6
7
8
9
10
11
12
13
0.01
T
J
= 25 °C
0.001
0.0001
100
200
300
400
500
600
V
GE
(V)
Fig. 5 - Typical IGBT Transfer Characteristics
V
CES
(V)
Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current
8.0
7.0
6.0
T
J
= 25 °C
600
500
T
J
= 25 °C
400
V
GEth
(V)
5.0
I
F
(A)
4.0
3.0
2.0
1.0
0
0
1.0
2.0
3.0
4.0
5.0
T
J
= 125 °C
300
200
100
0
T
J
= 150 °C
0
0.4
0.8
1.2
T
J
= 125 °C
1.6
2.0
2.4
2.8
6.0
7.0
8.0
I
C
(mA)
Fig. 6 - Typical IGBT Gate Threshold Voltage
V
F
(V)
Fig. 9 - Typical Diode Forward Characteristics
10 000
160
Allowable Case Temperature (°C)
140
120
100
80
60
40
20
0
0
30
60
90
120
150
180
210
240
DC
1000
I
C
(A)
100
10
1
1
10
100
1000
V
CE
(V)
Fig. 7 - IGBT Reverse BIAS SOA T
J
= 150 °C, V
GE
= 15V
I
F
- Continuous Forward Current (A)
Fig. 10 - Maximum Diode Continuous Forward Current vs.
Case Temperature
Revision: 11-Dec-17
Document Number: 95767
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GP300TD60S
www.vishay.com
Vishay Semiconductors
10000
60
55
50
40
45
Switching
Time (ns)
Energy (mJ)
35
30
25
20
15
10
5
0
0
50
100
E
off
t
d(off)
1000
t
f
t
d(on)
t
r
100
E
on
150
200
250
300
350
0
5
10
15
20
25
30
I
C
(A)
Fig. 11 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, V
CC
= 300 V, R
g
= 1.5
,
V
GE
= 15 V, L = 500 μH
R
g
(Ω)
Fig. 14 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, V
CC
= 300 V, I
C
= 300 A, V
GE
= 15 V, L = 500 μH
10000
260
240
Switching
Time (ns)
1000
t
f
220
200
t
rr
(ns)
t
d(off)
t
d(on)
100
t
r
180
160
140
120
T
J
= 125 °C
T
J
= 25 °C
10
0
50
100
150
200
250
300
350
100
200
400
600
800
1000 1200 1400 1600
I
C
(A)
Fig. 12 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, V
CC
= 300 V, R
g
= 1.5
,
V
GE
= 15 V, L = 500 μH
dI
F
/dt (A/μs)
Fig. 15 - Typical Diode Reverse Recovery Time vs. dI
F
/dt
V
CC
= 300 V, I
F
= 300 A
80
70
60
E
off
Energy (mJ)
50
40
E
on
30
20
10
0
0
5
10
15
20
25
30
140
130
120
110
100
90
80
70
60
50
40
30
20
10
200
400
T
J
= 125 °C
I
rr
(A)
T
J
= 25 °C
600
800
1000 1200 1400 1600
R
g
(Ω)
Fig. 13 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, V
CC
= 300 V, I
C
= 300 A, V
GE
= 15 V, L = 500 μH
dI
F
/dt (A/μs)
Fig. 16 - Typical Diode Reverse Recovery Current vs. dI
F
/dt
V
CC
= 300 V, I
F
= 300 A
Revision: 11-Dec-17
Document Number: 95767
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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