IHW20T120
Soft Switching Series
Low Loss DuoPack : IGBT in
TrenchStop
®
and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
•
•
•
Short circuit withstand time – 10µs
Designed for :
- Soft Switching Applications
- Induction Heating
Trenchstop
®
and Fieldstop technology for 1200 V applications
offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in
V
CE(sat)
™
Very soft, fast recovery anti-parallel EmCon HE diode
Low EMI
1
Qualified according to JEDEC for target applications
Application specific optimisation of inverse diode
Pb-free lead plating; RoHS compliant
V
CE
1200V
I
C
20A
V
CE(sat),Tj=25°C
1.7V
T
j,max
150°C
Marking
H20T120
Package
PG-TO-247-3-21
C
G
E
PG-TO-247-3-21
•
•
•
•
•
Type
IHW20T120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Diode surge non repetitive current,
t
p
limited by
T
jmax
T
C
= 25°C,
t
p
= 10ms, sine halfwave
T
C
= 25°C,
t
p
≤
2.5µs, sine halfwave
T
C
= 100°C,
t
p
≤
2.5µs, sine halfwave
Gate-emitter voltage
Short circuit withstand time
2)
Symbol
V
CE
I
C
Value
1200
40
20
Unit
V
A
I
Cpul s
-
I
F
60
60
23
13
I
Fpul s
I
FSM
36
A
50
130
120
V
GE
t
SC
P
tot
T
j
T
stg
±20
10
178
-40...+150
-55...+150
V
µs
W
°C
°C
V
GE
= 15V,
V
CC
≤
1200V,
T
j
≤
150°C
Power dissipation,
T
C
= 25°C
Operating junction temperature
Storage temperature
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.2 May 06
Power Semiconductors
IHW20T120
Soft Switching Series
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
Power Semiconductors
2
Rev. 2.2 May 06
IHW20T120
Soft Switching Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJC
R
thJCD
R
thJA
0.7
1.3
40
K/W
Symbol
Conditions
Max. Value
Unit
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 5 00
µA
V
CE(sat)
V
G E
= 15 V ,
I
C
= 20 A
T
j
=2 5
°C
T
j
=1 2 5° C
T
j
=1 5 0° C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 9 A
T
j
=2 5
°C
T
j
=1 2 5° C
T
j
=1 5 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 30 0
µA
,
V
C E
=
V
G E
V
C E
= 12 0 0V
,
V
G E
= 0V
T
j
=2 5
°C
T
j
=1 5 0° C
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 20 A
-
-
-
5.0
1.7
1.7
1.7
5.8
2.2
-
-
6.5
µA
-
-
-
-
-
-
-
13
250
2500
600
-
nA
S
-
-
-
1.7
2.0
2.2
2.2
-
-
1200
-
-
V
Symbol
Conditions
Value
min.
typ.
max.
Unit
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 96 0 V,
I
C
=2 0 A
V
G E
= 15 V
-
-
-
-
-
1460
78
65
120
13
120
-
-
-
-
-
-
pF
nC
nH
A
V
G E
= 15 V ,t
S C
≤
10
µs
V
C C
= 6 0 0 V,
T
j
= 25
°
C
-
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
3
Rev. 2.2 May 06
Power Semiconductors
IHW20T120
Soft Switching Series
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
t
rr
Q
rr
I
rrm
T
j
=2 5
°C
,
V
R
= 8 00 V ,
I
F
= 9 A,
d i
F
/ d t
=7 5 0 A/
µs
-
-
-
140
950
13.3
-
ns
nC
A
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
°C
,
V
C C
= 60 0 V,
I
C
= 2 0 A,
V
G E
= 0/ 15 V ,
R
G
= 28
Ω,
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
50
30
560
70
1.8
1.5
3.3
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
t
rr
Q
rr
I
rrm
T
j
=1 5 0° C
V
R
= 8 00 V ,
I
F
= 1 8 A,
d i
F
/ d t
=7 5 0 A/
µs
-
-
-
210
1600
16.5
-
-
-
ns
nC
A
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0° C
V
C C
= 60 0 V,
I
C
= 20 A ,
V
G E
= 0/ 15 V ,
R
G
= 2 8Ω
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
50
32
660
130
2.6
2.6
5.2
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Power Semiconductors
4
Rev. 2.2 May 06
IHW20T120
Soft Switching Series
70A
60A
t
p
=2µs
T
C
=80°C
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
50A
40A
10A
10µs
T
C
=110°C
30A
50µs
1A
200µs
500µs
2ms
DC
I
c
20A
10A
0A
10H z
I
c
100H z
1kH z
10kH z
100kH z
0,1A
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 600V,
V
GE
= 0/+15V,
R
G
= 28Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. IGBT Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤150°C;V
GE
=15V)
180W
160W
140W
120W
100W
80W
60W
40W
20W
0W
25°C
50°C
75°C
100°C
125°C
40A
I
C
,
COLLECTOR CURRENT
P
tot
,
DISSIPATED POWER
30A
20A
10A
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≥
15V,
T
j
≤
150°C)
Power Semiconductors
5
Rev. 2.2 May 06
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