BTA204S-800E
3Q Hi-Com Triac
14 August 2017
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface-mountable
plastic package. This "series E" triac balances the requirements of commutation performance
and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including
microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct triggering from low power drivers and logic ICs
High blocking voltage capability
High commutation capability with sensitive gate
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Surface-mountable package
Triggering in three quadrants only
3. Applications
•
•
•
AC solenoids
General purpose motor control
Home appliances
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
-
Typ
-
-
-
-
-
-
Max
800
4
25
27
125
10
Unit
V
A
A
A
°C
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BTA204S-800E
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
-
30
Typ
-
-
-
1.4
-
Max
10
10
12
1.7
-
Unit
mA
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 5 A; T
j
= 25 °C;
Fig. 10
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 4 A;
dV
com
/dt = 10 V/µs; gate open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 4 A;
dV
com
/dt = 0.1 V/µs; gate open circuit
Dynamic characteristics
dI
com
/dt
2.1
8
-
-
-
-
A/ms
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
DPAK (SOT428)
Simplified outline
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
BTA204S-800E
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BTA204S-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
14 August 2017
2 / 13
WeEn Semiconductors
BTA204S-800E
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
12
I
T(RMS )
(A)
10
8
003aag083
Conditions
Min
-
Max
800
4
25
27
3.1
100
2
5
0.5
150
125
003aad615
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 0.2 A
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
5
I
T(RMS)
(A)
4
107 °C
3
6
2
4
2
0
10
-2
1
10
-1
1
10
s urge duration (s)
0
-50
0
50
100
T
mb
(°C)
150
f = 50 Hz; T
mb
= 107 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
Fig. 2. RMS on-state current as a function of mounting
base temperature; maximum values
BTA204S-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
14 August 2017
3 / 13
WeEn Semiconductors
BTA204S-800E
3Q Hi-Com Triac
8
P
tot
(W)
6
003aag081
conduction
angle
(degrees)
30
60
90
120
180
form
factor
α
4
2.8
2.2
1.9
1.57
α = 180 °
α
101
T
mb(max)
104 (°C)
107
110
113
116
119
122
120 °
90 °
60 °
30 °
4
2
0
0
1
2
3
4
I
T(RMS)
(A)
5
125
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
10
3
I
TS M
(A)
003aag085
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms; (1) dI
T
/dt limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA204S-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
14 August 2017
4 / 13
WeEn Semiconductors
BTA204S-800E
3Q Hi-Com Triac
30
I
TSM
(A)
003aag086
20
10
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA204S-800E
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
14 August 2017
5 / 13
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