SA630
Single-Pole Double-Throw (SPDT) switch
Rev. 3 — 23 July 2014
Product data sheet
1. General description
The SA630 is a wideband RF switch fabricated in BiCMOS technology and incorporating
on-chip CMOS/TTL compatible drivers. Its primary function is to switch signals in the
frequency range DC to 1 GHz from one 50
channel to another. The switch is activated
by a CMOS/TTL compatible signal applied to the enable channel 1 pin (ENCH1).
The extremely low current consumption makes the SA630 ideal for portable applications.
The excellent isolation and low loss makes this device a suitable replacement for PIN
diodes.
The SA630 is available in an 8-pin SO (surface-mounted miniature) package.
2. Features and benefits
Wideband (DC to 1 GHz)
Low through loss (1 dB typical at 200 MHz)
Unused input is terminated internally in 50
Excellent overload capability (1 dB gain compression point +18 dBm at 300 MHz)
Low DC power (170
A
from 5 V supply)
Fast switching (20 ns typical)
Good isolation (off channel isolation 60 dB at 100 MHz)
Low distortion (IP3 intercept +33 dBm)
Good 50
match (return loss 18 dB at 400 MHz)
Full ESD protection
Bidirectional operation
3. Applications
Digital transceiver front-end switch
Antenna switch
Filter selection
Video switch
FSK transmitter
NXP Semiconductors
SA630
Single-Pole Double-Throw (SPDT) switch
4. Ordering information
Table 1.
Ordering information
Topside
marking
SA630D
Package
Name
SO8
Description
plastic small outline package; 8 leads; body width 3.9 mm
Version
SOT96-1
Type number
SA630D/01
4.1 Ordering options
Table 2.
Ordering options
Orderable
part number
SA630D/01,112
SA630D/01,118
Package
Packing method
Minimum
order
quantity
2000
2500
Temperature
Type number
SA630D/01
SO8
SO8
Standard marking
*IC’s tube - DSC bulk pack
Reel 13” Q1/T1
*Standard mark SMD
T
amb
=
40 C
to +85
C
T
amb
=
40 C
to +85
C
5. Block diagram
input/output
output/input
output/input
ENCH1
aaa-013987
Fig 1.
Block diagram
SA630
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 23 July 2014
2 of 20
NXP Semiconductors
SA630
Single-Pole Double-Throw (SPDT) switch
6. Pinning information
6.1 Pinning
V
DD
GND
INPUT
ENCH1
1
2
8
7
OUT1
AC_GND
GND
OUT2
SA630D/01
3
4
aaa-013986
6
5
Fig 2.
Pin configuration for SO8
6.2 Pin description
Table 3.
Symbol
V
DD
GND
INPUT
ENCH1
OUT2
AC_GND
OUT1
Pin description
Pin
1
2, 6
3
4
5
7
8
Description
supply voltage
ground
input
enable channel 1
output
AC ground
output
7. Equivalent circuit
V
DD
+5 V
1
20 kΩ
8
OUT1
CONTROL
LOGIC
50 Ω
2
50 Ω
7
AC bypass
6
3
4
aaa-013988
INPUT
ENCH1
(logic 0 level)
20 kΩ
5
OUT2
Fig 3.
Equivalent circuit
SA630
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 23 July 2014
3 of 20
NXP Semiconductors
SA630
Single-Pole Double-Throw (SPDT) switch
8. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DD
P
T
j(max)
P
i(max)
P
o(max)
T
stg
[1]
Parameter
supply voltage
power dissipation
maximum junction
temperature
maximum input power
maximum output power
storage temperature
Conditions
T
amb
= 25
C
(still air)
[1]
Min
0.5
-
-
-
-
65
Max
+5.5
780
150
+20
+20
+150
Unit
V
mW
C
dBm
dBm
C
Maximum dissipation is determined by the operating ambient temperature and the thermal resistance
R
th(j-a)
.
9. Recommended operating conditions
Table 5.
Symbol
V
DD
T
amb
T
j
Operating conditions
Parameter
supply voltage
ambient temperature
junction temperature
operating
operating
Conditions
Min
3.0
40
40
Max
5.5
+85
+105
Unit
V
C
C
10. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
SO8 package
Typ
158
Unit
C/W
SA630
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 23 July 2014
4 of 20
NXP Semiconductors
SA630
Single-Pole Double-Throw (SPDT) switch
11. Static characteristics
Table 7.
Static characteristics
V
DD
= +5 V; T
amb
= 25
C; unless otherwise specified.
Symbol
I
DD
V
th
V
IH
V
IL
I
IL(ENCH1)
I
IH(ENCH1)
[1]
Parameter
supply current
threshold voltage
HIGH-level input voltage
LOW-level input voltage
LOW-level input current on pin ENCH1
HIGH-level input current on pin ENCH1
Conditions
TTL/CMOS logic
logic 1 level;
enable channel 1
logic 0 level;
enable channel 2
ENCH1 = 0.4 V
ENCH1 = 2.4 V
[1]
Min
40
1.1
2.0
0.3
1
1
Typ
170
1.25
-
-
0
0
Max
300
1.4
V
DD
+0.8
+1
+1
Unit
A
V
V
V
A
A
The ENCH1 input must be connected to a valid logic level for proper operation of the SA630.
12. Dynamic characteristics
Table 8.
Dynamic characteristics
All measurements include the effects of the SA630 evaluation board (Figure
19).
Measurement system impedance is 50
.
Symbol
s
21
, s
12
Parameter
insertion loss (ON channel)
Conditions
DC to 100 MHz
500 MHz
900 MHz
s
21
, s
12
isolation (OFF channel)
[1]
10 MHz
100 MHz
500 MHz
900 MHz
s
11
, s
22
s
11
, s
22
t
d(off)
t
f(off)
t
r(on)
V
trt(p-p)
P
L(1dB)
IP3
IP2
NF
return loss (ON channel)
return loss (OFF channel)
turn-off delay time
turn-off fall time
turn-on rise time
peak-to-peak transient voltage
output power at 1 dB gain compression
third-order intercept point
second-order intercept point
noise figure
DC to 400 MHz
900 MHz
DC to 400 MHz
900 MHz
50 % TTL to
(90 % to 10 %) RF
90 % to 10 % RF
10 % to 90 % RF
switching transients
DC to 1 GHz
100 MHz
100 MHz
Z
o
= 50
100 MHz
900 MHz
[1]
Min
-
-
-
70
-
-
24
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
1
1.4
2
80
60
50
30
20
12
17
13
20
5
5
165
+18
+33
+52
1.0
2.0
Max
-
-
2.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
ns
ns
mV
dBm
dBm
dBm
dB
dB
The placement of the AC bypass capacitor is critical to achieve these specifications. See
Section 14
for more details.
SA630
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 23 July 2014
5 of 20
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