TS617
Dual wideband high output current operational amplifier
Features
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■
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■
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Wideband of 200 MHz/gain = 4
Very high slew rate
High output current
Specified on 25 and 100-Ω loads
Thermal shut-down set at Tj = 150° C
Large protection on outputs
Power-down mode with high Z-out
Very low noise
Tested at 5 and 12-V supplies
Single or dual supply operation
Minimum and maximum limits are tested in full
production
SO-14
-IN1 1
+IN1 2
A1 3
VCC - 4
A0 5
+IN2 6
-IN2 7
_
+
14 OUT1
13 NC
Power
control
Applications
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Power line equipment
Drivers for xDSL modems
Video drivers
Video distribution
Description
The TS617 is a wideband high output current dual
operational amplifier optimized for driving high
data rates on power lines and twisted pair
telephone lines.
The TS617 features a linearity on low resistive
loads, large output swing and high output current,
very low noise, low consumption and I-supply
control and power-down mode with high Z-out
and short settling times.
O
so
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
+
_
od
r
s)
t(
uc
12 NC
11 VCC +
10 NC
9 NC
8 OUT2
November 2008
Rev 1
1/19
www.st.com
19
Absolute maximum ratings and operating conditions
TS617
1
Absolute maximum ratings and operating conditions
Table 1.
Symbol
V
CC
V
id
T
oper
T
stg
T
j
Θ
JA
Θ
JC
P
max
Supply voltage
(1)
Differential input voltage
(2)
Operating free air temperature range
Storage temperature
Maximum junction temperature
SO14 thermal resistance junction to ambient
SO14 thermal resistance junction to case
SO14 maximum power dissipation
(3)
(at Ta = 25° C) for
T
j
= 150° C
HBM: human body model
(4)
ESD
MM: machine model
(5)
CDM: charged device model
1. All voltage values are measured with respect to the ground pin.
Absolute maximum ratings
Parameter
Value
14
±2
-40 to +85
-65 to +150
150
103
31
1.2
2
Unit
V
DC
V
°C
°C
°C
°C/W
°C/W
W
200
2. Differential voltage is between the non-inverting input terminal and the inverting input terminal.
3. Short-circuits can cause excessive heating. Destructive dissipation can result from short circuits on
amplifiers. An internal thermal shut-down set the circuit in power down mode automatically when the silicon
temperature reaches 150°C.
4. Human body model: 100 pF discharged through a 1.5 kΩ resistor into P
min
of device.
5. This is a minimum value. Machine model ESD: a 200 pF capacitor is charged to the specified voltage, then
discharged directly into the IC with no external series resistor.
Table 2.
Symbol
V
CC
V
icm
Operating conditions
Power supply voltage
(1)
1. Tested in full production at ±2.5 V and ±6 V supply voltages.
O
so
b
te
le
ro
P
Common mode input voltage
uc
d
s)
t(
so
b
-O
te
le
r
P
od
1
s)
t(
uc
kV
V
kV
Parameter
Value
4.5 to13
±6
Unit
V
V
2/19
TS617
Electrical characteristics
2
Table 3.
Symbol
Electrical characteristics
V
CC
= ±2.5 V, T
amb
= 25° C, full power mode (unless otherwise specified)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
DC performance
V
io
ΔV
io
I
ib+
Input offset voltage
V
io
drift vs. temperature
Non-inverting input bias current
T
amb
T
min.
< T
amb
< T
max.
T
min.
< T
amb
< T
max.
T
amb
T
min
.
< T
amb
< T
max.
Inverting input bias current
Common mode rejection ratio
20 log
(ΔV
ic
/ΔV
io
)
Supply voltage rejection ratio
20 log
(ΔV
CC
/ΔV
io
)
Power supply rejection ratio
20 log (ΔV
CC
/ΔV
out
)
T
amb
T
min.
< T
amb
< T
max.
ΔV
ic
= ±1 V
T
min.
< T
amb
< T
max.
ΔV
CC
= ±2 V to ±2.5 V
T
min.
< T
amb
< T
max.
Gain = +4, Rfb = 390
Ω
ΔV
CC
= ±100 mV at 100 kHz
Full power, no load
T
min.
< T
amb
< T
max.
I
CC
Supply current per operator
50
45
-30
-50
-10
2.5
2.7
5
-15
-20
-11
-12
51
50
-30
+50
μV/°C
μA
μA
10
mV
I
ib-
CMR
SVR
PSRR
Medium power, no load
T
min.
< T
amb
< T
max.
Dynamic performance and output characteristics
Bw
-3 dB bandwidth in small signal
O
bs
R
OL
SR
l
o
te
e
ro
P
uc
d
s)
t(
Low power, no load
so
b
-O
P
te
le
od
r
55
50
9
10
7
7.5
2
2.3
76
s)
t(
uc
dB
dB
dB
11
mA
8
mA
3
mA
T
min
.
< T
amb
< T
max.
Small signal V
out
= 20 mVp-p
R
L
= 100
Ω
Gain = +2, Rfb = 620
Ω
Gain = +4, Rfb = 390
Ω
Gain = +8, Rfb = 390
Ω
Gain = +4, medium power
Gain = +4, low power
R
L
= 100
Ω
out
= 2 Vp-p
,V
T
min.
< T
amb
< T
max.
V
out
= 3 Vp-p, gain = +4,
R
L
= 100
Ω
70
125
105
55
90
33
MHz
50
110
kΩ
90
Open-loop transimpedance
300
450
400
100
V/μs
Slew rate
Medium power
Low power
3/19
Electrical characteristics
Table 3.
Symbol
TS617
V
CC
= ±2.5 V, T
amb
= 25° C, full power mode (unless otherwise specified) (continued)
Parameter
Test conditions
R
L
= 100
Ω
R
L
= 25
Ω
Min.
1.6
1.5
Typ.
1.68
1.58
V
1.6
1.5
-1.68
-1.57
-1.6
-1.5
300
350
330
-370
-350
600
-1.60
-1.50
V
Max.
Unit
V
OH
High level output voltage
T
min.
< T
amb
< T
max.
R
L
= 100
Ω
R
L
= 25
Ω
R
L
= 100
Ω
R
L
= 25
Ω
V
OL
Low level output voltage
T
min.
< T
amb
< T
max.
R
L
= 100
Ω
R
L
= 25
Ω
V
out
= -1 V
T
min.
< T
amb
< T
max.
V
out
= +1 V
T
min.
< T
amb
< T
max.
Output to GND
I
sink
I
out
I
source
I
short circuit
(limited by thermal shut down)
Noise and distortion
eN
iNp
iNn
Input noise voltage
Positive input noise current
Positive input noise current
F = 100 kHz
F = 100 kHz
F = 100 kHz
H2/H3
2nd and 3rd harmonics
Power-down function
Ipdw
Consumption in power-down
mode
ton
toff
O
so
b
te
le
Time for power-down mode to
operating mode
Time for operating mode to
power-down mode
ro
P
uc
d
s)
t(
V
out
= 2 Vp-p, gain = +4,
Rfb=390
Ω
F = 6 MHz
,
,
R
L
= 25
Ω
H2
H3
so
b
-O
P
te
le
od
r
3.5
39
20
-58
-68
s)
t(
uc
-300
mA
nV/
√
Hz
pA/
√
Hz
pA/
√
Hz
dBc
A1 = 0, A0 = 0
T
min.
< T
amb
< T
max.
65
80
80
450
200
µA
A1 = A0 = 0 to A1 = A0 = 1
V
out
= 1 Vdc, gain = +4
A1 = A0 = 1 to A1 = A0 = 0
V
out
= 1 Vdc, gain = +4
200
1000
ns
ns
4/19
TS617
Table 4.
Symbol
DC performance
V
io
ΔV
io
I
ib+
Input offset voltage
V
io
drift vs. temperature
Non-inverting input bias current
T
amb
T
min.
< T
amb
< T
max.
T
min.
< T
amb
< T
max.
T
amb
T
min.
< T
amb
< T
max.
Inverting input bias current
Common mode rejection ratio
20 log
(ΔV
ic
/ΔV
io
)
Supply voltage rejection ratio
20 log
(ΔV
CC
/ΔV
io
)
Power supply rejection ratio
20 log (ΔV
CC
/ΔV
out
)
T
amb
T
min.
< T
amb
< T
max.
ΔV
ic
= ±3 V
T
min.
< T
amb
< T
max.
ΔV
CC
= ±2.5 V to ±6 V
T
min.
< T
amb
< T
max.
Gain = +4, Rfb = 390
Ω
ΔV
CC
= ±100 mV at 100 kHz
Full power, no load
T
min.
< T
amb
< T
max.
Medium power, no load
I
CC
Supply current per operator
T
min.
< T
amb
< T
max.
Low power, no load
50
45
-35
-80
-12
Electrical characteristics
V
CC
= ±6 V, T
amb
= 25° C, full power mode (unless otherwise specified)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
4.5
5
5
-25
-30
-7
-9
51
12
mV
μV/°C
80
μA
μA
35
I
ib-
CMR
dB
50
72
65
SVR
PSRR
T
min.
< T
amb
< T
max.
Dynamic performance and output characteristics
Bw
-3 dB bandwidth in small signal
bs
O
SR
V
OH
R
OL
l
o
Open-loop transimpedance
te
e
ro
P
uc
d
s)
t(
Small signal V
out
= 20 mVp-p
R
L
= 100
Ω
Gain = +2, Rfb = 620
Ω
Gain = +4, Rfb = 390
Ω
Gain = +8, Rfb = 390
Ω
Gain = +4, medium power
Gain = +4, low power
so
b
-O
P
te
le
od
r
13
14
9.7
10.5
2.6
2.9
50
s)
t(
uc
dB
dB
16
mA
12
mA
4
mA
140
300
210
110
160
60
MHz
R
L
= 100
Ω,
V
out
= 7 Vp-p
T
min.
< T
amb
< T
max.
Gain = +4, R
L
= 100
Ω
V
out
= 5 Vp-p
V
out
= 10 Vp-p
Medium power, V
out
= 5 Vp-p
Low power, V
out
= 5 Vp-p
30
70
kΩ
50
400
Slew rate
650
1000
500
200
V/μs
High level output voltage
R
L
= 100
Ω
T
min.
< T
amb
< T
max.
5
5.1
V
5
5/19
stm32/stm8
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