MIC4604
85V Half Bridge MOSFET Drivers with up to
16V Programmable Gate Drive
General Description
The MIC4604 is an 85V Half Bridge MOSFET driver. The
MIC4604 features fast 39ns propagation delay times and
20ns driver rise/fall times for a 1nF capacitive load. The
low-side and high-side gate drivers are independently
controlled. The MIC4604 has TTL input thresholds. It
includes a high-voltage internal diode that helps charge
the high-side gate drive bootstrap capacitor.
A robust, high-speed, and low-power level shifter provides
clean level transitions to the high-side output. The robust
operation of the MIC4604 ensures that the outputs are not
affected by supply glitches, HS ringing below ground, or
HS slewing with high-speed voltage transitions.
Undervoltage protection is provided on both the low-side
and high-side drivers.
The MIC4604 is available in an 8-pin SOIC package and a
tiny 10-pin 2.5mm × 2.5mm TDFN package. Both
packages have an operating junction temperature range of
–40°C to +125°C.
Datasheets and support documentation are available on
Micrel’s web site at:
www.micrel.com.
Features
•
5.5V to 16V gate drive supply voltage range.
•
Drives high-side and low-side N-Channel MOSFETs
with independent inputs
•
TTL input thresholds
•
On chip bootstrap diode
•
Fast 39ns propagation times
•
Drives 1000pF load with 20ns rise and fall times
•
Low power consumption
•
Supplies undervoltage protection
•
–40°C to +125°C junction temperature range
Applications
•
•
•
•
•
Power inverters
High-voltage step-down regulators
Half, full and 3-phase bridge motor drives
Distributed power systems
Computing peripherals
Typical Application
Motor Door Lock Solution
Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-0800 • fax + 1 (408) 474-1000 •
http://www.micrel.com
June 25, 2013
Revision 1.0
Micrel, Inc.
MIC4604
Ordering Information
Part Number
MIC4604YMT
MIC4604YM
Part Marking
463
MIC4604 YM
Input
TTL
TTL
Junction Temperature Range
–40° to +125°C
–40° to +125°C
Package
10-Pin 2.5mm × 2.5mm TDFN
8-Pin SOIC
Pin Configurations
MIC4604YMT
10-Pin 2.5mm x2.5mm TDFN (MT)
(Top View)
MIC4604YM
8-Pin SOIC (M)
(Top View)
Pin Description
Pin Number
TDFN
1
2, 10
3
4
5
6
7
8
9
EP
2
3
4
5
6
7
8
SOIC
1
Pin
Name
VDD
NC
HB
HO
HS
HI
LI
VSS
LO
EPAD
Pin Function
Input supply for gate drivers. Decouple this pin to VSS with a >2.2µF capacitor. Anode
connection to internal bootstrap diode.
No Connect
High-side bootstrap supply. External bootstrap capacitor is required. Connect bootstrap
capacitor across this pin and HS. Cathode connection to internal bootstrap diode.
High-side drive output. Connect to gate of the external high-side power MOSFET.
High-side drive reference connection. Connect to source of the external high-side power
MOSFET. Connect this pin to the bootstrap capacitor.
High-side drive input.
Low-side drive input.
Driver reference supply input. Connected to power ground of external circuitry and to source
of low-side power MOSFET.
Low-side drive output. Connect to gate of the external low-side power MOSFET.
Exposed pad. Connect to VSS.
June 25, 2013
2
Revision 1.0
Micrel, Inc.
MIC4604
(1,
4)
Absolute Maximum Ratings
Operating Ratings
(2)
Supply Voltage (V
DD
) [decreasing V
DD
] ........... 5.25V to 16V
Supply Voltage (V
DD
) [increasing V
DD
] .............. 5.5V to 16V
Voltage on HS ....................................................
−1V
to 85V
Voltage on HS (repetitive transient) ...................
−5V
to 90V
HS Slew Rate ............................................................ 50V/ns
Voltage on HB ................................ V
HS
+ 4.5V to V
HS
+ 16V
and/or.......................................... V
DD
−
1V to V
DD
+ 85V
Junction Temperature (T
J
) ........................ –40°C to +125°C
Junction Thermal Resistance
2.5mm x 2.5mm TDFN-10L (θ
JA
) ....................... 75°C/W
SOIC-8L (θ
JA
) .................................................. 98.9°C/W
Supply Voltage (V
DD
, V
HB
– V
HS
) .....................
−0.3V
to 18V
Input Voltages (V
LI,
V
HI
, V
EN
) .................
−0.3V
to V
DD
+ 0.3V
Voltage on LO (V
LO
) .............................
−0.3V
to V
DD
+ 0.3V
Voltage on HO (V
HO
) ..................... V
HS
−
0.3V to V
HB
+ 0.3V
Voltage on HS (continuous) ...............................
−1V
to 90V
Voltage on HB .............................................................. 108V
Average Current in VDD to HB Diode ....................... 100mA
Storage Temperature (T
s
) .........................
−60°C
to +150°C
(3)
ESD Rating
HBM ...................................................................... 1.5kV
MM ......................................................................... 200V
Electrical Characteristics
(4)
V
DD
= V
HB
= 12V; V
SS
= V
HS
= 0V; No load on LO or HO; T
A
= +25°C; unless otherwise noted.
Bold
values indicate –40°C ≤ T
J
≤ +125°C
Symbol
Supply Current
I
DD
I
DDO
I
HB
I
HBO
I
HBS
V
DD
Quiescent Current
V
DD
Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to V
SS
Quiescent Current
LI = HI = 0V
f = 20kHz
LI = HI = 0V or LI = 0V and HI = 5V
f = 20kHz
V
HS
= V
HB
= 90V
48
136
20
29
0.5
200
300
75
200
5
µA
µA
µA
µA
µA
Parameter
Condition
Min.
Typ.
Max.
Units
Input (LI, HI)
V
IL
V
IH
V
HYS
R
I
Low-Level Input Voltage
High-Level Input Voltage
Input Voltage Hysteresis
Input Pull-Down Resistance
100
2.2
0.05
240
500
0.8
V
V
V
kΩ
Undervoltage Protection
V
DDF
V
DDH
V
HBF
V
HBH
V
DD
Falling Threshold
V
DD
Threshold Hysteresis
HB Falling Threshold
HB Threshold Hysteresis
Rising V
HB
Threshold; V
HBR
= V
HBF
+ V
HBH
Rising V
DD
Threshold; V
DDR
= V
DDF
+ V
DDH
4.0
4.0
4.4
0.21
4.4
0.23
4.9
4.9
V
V
V
V
Bootstrap Diode
V
DL
V
DH
R
D
Notes:
1. Exceeding the absolute maximum ratings may damage the device.
2. The device is not guaranteed to function outside its operating ratings.
3. Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5kΩ in series with 100pF.
4. Specification s are for packaged product only.
Low-Current Forward Voltage
High-Current Forward Voltage
Dynamic Resistance
I
VDD-HB
= 100µA
I
VDD-HB
= 50mA
I
VDD-HB
= 50mA
0.42
0.75
2.8
0.70
1.0
5.0
V
V
Ω
June 25, 2013
3
Revision 1.0
Micrel, Inc.
MIC4604
Electrical Characteristics
(4)
(Continued)
V
DD
= V
HB
= 12V; V
SS
= V
HS
= 0V; No load on LO or HO; T
A
= +25°C; unless otherwise noted.
Bold
values indicate –40°C ≤ T
J
≤ +125°C
Symbol
LO Gate Driver
V
OLL
V
OHL
I
OHL
I
OLL
Low-Level Output Voltage
High-Level Output Voltage
Peak Sink Current
Peak Source Current
I
LO
= 50mA
I
LO
=
−50mA,
V
OHL
= V
DD
– V
LO
V
LO
= 5V
V
LO
= 5V
0.17
0.25
1
1
0.4
1.0
V
V
A
A
Parameter
Condition
Min.
Typ.
Max.
Units
HO Gate Driver
V
OLH
V
OHH
I
OHH
I
OLH
Low-Level Output Voltage
High-Level Output Voltage
Peak Sink Current
Peak Source Current
(5)
I
HO
= 50mA
I
HO
=
−50mA,
V
OHH
= V
HB
– V
HO
V
HO
= 5V
V
HO
= 5V
0.2
0.22
1.5
1
0.6
1.0
V
V
A
A
Switching Specifications
t
LPHL
t
HPHL
t
LPLH
t
HPLH
t
RC/FC
t
R/F
t
PW
t
BS
Note:
Lower Turn-Off Propagation Delay
(LI Falling to LO Falling)
Upper Turn-Off Propagation Delay
(HI Falling to HO Falling)
Lower Turn-On Propagation Delay
(LI Rising to LO Rising)
Upper Turn-On Propagation Delay
(HI Rising to HO Rising)
Output Rise/Fall Time
Output Rise/Fall Time (3V to 9V)
Minimum Input Pulse Width that
Changes the Output
Bootstrap Diode Turn-On or Turn-Off
Time
C
L
= 1000pF
C
L
= 0.1µF
37
34
39
33
20
0.8
50
10
75
75
75
75
ns
ns
ns
ns
ns
µs
ns
ns
5. Guaranteed by design. Not production tested.
June 25, 2013
4
Revision 1.0
Micrel, Inc.
MIC4604
Timing Diagrams
Note:
6. All propagation delays are measured from the 50% voltage level.
Block Diagram
Figure 1. MIC4604 Block Diagram
June 25, 2013
5
Revision 1.0
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
