Freescale Semiconductor
Technical Data
Document Number: MRF1550N
Rev. 15, 6/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common source amplifier applications in
12.5 volt mobile FM equipment.
•
Specified Performance @ 175 MHz, 12.5 Volts
Output Power — 50 Watts
Power Gain — 14.5 dB
Efficiency — 55%
•
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
Features
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Broadband - Full Power Across the Band: 135 - 175 MHz
•
200_C Capable Plastic Package
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
•
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1550NT1
MRF1550FNT1
175 MHz, 50 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264 - 10, STYLE 1
TO - 272 - 6 WRAP
PLASTIC
MRF1550NT1
CASE 1264A - 03, STYLE 1
TO - 272 - 6
PLASTIC
MRF1550FNT1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
(1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
- 0.5, +40
±
20
12
165
0.50
- 65 to +150
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(2)
0.75
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
1. Calculated based on the formula P
D
=
TJ – TC
Rating
3
Package Peak Temperature
260
Unit
°C
R
θJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
MRF1550NT1 MRF1550FNT1
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 800
μA)
Drain - Source On - Voltage
(V
GS
= 5 Vdc, I
D
= 1.2 A)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 4.0 Adc)
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0 V, f = 1 MHz)
RF Characteristics
(In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 50 Watts, I
DQ
= 500 mA)
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 50 Watts, I
DQ
= 500 mA)
f = 175 MHz
f = 175 MHz
G
ps
η
—
—
14.5
55
—
—
dB
%
C
iss
C
oss
C
rss
—
—
—
—
—
—
500
250
35
pF
pF
pF
V
GS(th)
R
DS(on)
V
DS(on)
1
—
—
—
—
—
3
0.5
1
Vdc
Ω
Vdc
I
DSS
I
GSS
—
—
—
—
1
0.5
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
MRF1550NT1 MRF1550FNT1
2
RF Device Data
Freescale Semiconductor
V
GG
C10
C9
C8
+
R4
R3
C21
L5
C7
C20
C19
C18
+
V
DD
R2
R1
N1
RF
INPUT
C1
C2
C3
C4
C5
Z1
L1
Z2
Z3
L2
Z4
C6
Z5
DUT
C11
C12
C13
C14
C15
C16
Z6
Z7
Z8
L3
Z9
L4
Z10
Z11 C17
N2
RF
OUTPUT
B1
C1
C2
C3
C4, C16
C5
C6
C7, C17
C8, C18
C9, C19
C10
C11, C12
C13
C14
C15
C20
L1
L2
L3
Ferroxcube #VK200
180 pF, 100 mil Chip Capacitor
10 pF, 100 mil Chip Capacitor
33 pF, 100 mil Chip Capacitor
24 pF, 100 mil Chip Capacitors
160 pF, 100 mil Chip Capacitor
240 pF, 100 mil Chip Capacitor
300 pF, 100 mil Chip Capacitors
10
μF,
50 V Electrolytic Capacitors
0.1
μF,
100 mil Chip Capacitors
470 pF, 100 mil Chip Capacitor
200 pF, 100 mil Chip Capacitors
22 pF, 100 mil Chip Capacitor
30 pF, 100 mil Chip Capacitor
6.8 pF, 100 mil Chip Capacitor
1,000 pF, 100 mil Chip Capacitor
18.5 nH, Coilcraft #A05T
5 nH, Coilcraft #A02T
1 Turn, #24 AWG, 0.250″ ID
L4
L5
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Z11
Board
1 Turn, #26 AWG, 0.240″ ID
3 Turn, #24 AWG, 0.180″ ID
Type N Flange Mounts
5.1
Ω,
1/4 W Chip Resistor
39
Ω
Chip Resistor (0805)
1 kΩ, 1/8 W Chip Resistor
33 kΩ, 1/4 W Chip Resistor
1.000″ x 0.080″ Microstrip
0.400″ x 0.080″ Microstrip
0.200″ x 0.080″ Microstrip
0.200″ x 0.080″ Microstrip
0.100″ x 0.223″ Microstrip
0.160″ x 0.080″ Microstrip
0.260″ x 0.080″ Microstrip
0.280″ x 0.080″ Microstrip
0.270″ x 0.080″ Microstrip
0.730″ x 0.080″ Microstrip
Glass Teflon
®
, 31 mils
Figure 1. 135 - 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS
80
Pout , OUTPUT POWER (WATTS)
70
60
50
155 MHz
40
30
20
10
0
0
1.0
V
DD
= 12.5 Vdc
2.0
3.0
4.0
P
in
, INPUT POWER (WATTS)
5.0
6.0
−20
10
20
30
40
50
60
P
out
, OUTPUT POWER (WATTS)
70
80
175 MHz
135 MHz
IRL, INPUT RETURN LOSS (dB)
−5
0
V
DD
= 12.5 Vdc
−10
175 MHz
135 MHz
−15
155 MHz
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss
versus Output Power
MRF1550NT1 MRF1550FNT1
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS
16
175 MHz
15
h
, DRAIN EFFICIENCY (%)
14
GAIN (dB)
155 MHz
13
12
11
V
DD
= 12.5 Vdc
10
10
20
30
40
50
60
P
out
, OUTPUT POWER (WATTS)
70
80
30
10
20
30
40
50
60
P
out
, OUTPUT POWER (WATTS)
70
155 MHz
60
135 MHz
175 MHz
80
135 MHz
50
40
V
DD
= 12.5 Vdc
70
80
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
70
Pout , OUTPUT POWER (WATTS)
135 MHz
65
175 MHz
60
155 MHz
55
V
DD
= 12.5 Vdc
P
in
= 35 dBm
50
200
400
600
800
I
DQ
, BIASING CURRENT (mA)
1000
1200
80
155 MHz
h
, DRAIN EFFICIENCY (%)
70
175 MHz
135 MHz
60
50
V
DD
= 12.5 Vdc
P
in
= 35 dBm
40
200
400
800
600
I
DQ
, BIASING CURRENT (mA)
1000
1200
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus
Biasing Current
90
Pout , OUTPUT POWER (WATTS)
80
70
60
50
40
30
10
I
DQ
= 500 mA
P
in
= 35 dBm
11
12
13
14
15
135 MHz
175 MHz
155 MHz
80
155 MHz
h
, DRAIN EFFICIENCY (%)
70
175 MHz
60
135 MHz
50
I
DQ
= 500 mA
P
in
= 35 dBm
40
10
11
12
13
14
15
V
DD
, SUPPLY VOLTAGE (VOLTS)
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1550NT1 MRF1550FNT1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
10
11
MTTF FACTOR (HOURS X AMPS
2
)
10
10
10
9
10
8
90 100 110 120 130 140 150 160 170 180 190 200 210
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±10%
of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
Figure 10. MTTF Factor versus Junction Temperature
MRF1550NT1 MRF1550FNT1
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
