AUTOMOTIVE GRADE
Features
Low V
CE (on)
Planar IGBT Technology
C
AUIRGDC0250
Low Switching Losses
Square RBSOA
100% of The Parts Tested for ILM
Positive V
CE (on)
Temperature Coefficient
Reflow Capable per JDSD22-A113
Lead-Free, RoHS Compliant
Automotive Qualified *
V
CES
= 1200V
G
E
I
C
= 81A @ T
C
= 100°C
V
CE(on)
typ. = 1.37V @ 33A
n-channel
Benefits
Device optimized for soft switching applications
High Efficiency due to Low V
CE(on)
, low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Low EMI
Super-TO-220
AUIRGDC0250
Application
Relay Replacement
Base Part Number
AUIRGDC0250
Package Type
Super-TO-220
PTC Heater
G
Gate
Standard Pack
Form
Quantity
Tube
50
C
Collector
E
Emitter
Orderable Part Number
AUIRGDC0250
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
V
CES
Collector-to-Emitter Voltage
I
C
@ T
C
= 25°C Continuous Collector Current
I
C
@ T
C
= 100°C Continuous Collector Current
I
CM
Pulse Collector Current, V
GE
= 15V
I
LM
Clamped Inductive Load Current, V
GE
= 20V
V
GE
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
P
D
@ T
C
= 25°C Maximum Power Dissipation
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Max.
1200
141
81
99
99
±20
±30
543
217
-55 to +150
Units
V
A
V
W
°C
Soldering Temperature, for 10 sec. (Through Hole Mounting) 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
R
JC
(IGBT)
R
CS
R
JA
Parameter
Thermal Resistance Junction-to-Case (each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Typ.
–––
0.50
–––
Max.
0.23
–––
62
Units
°C/W
*
Qualification standards can be found at
www.infineon.com
1
2018-03-01
AUIRGDC0250
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Min. Typ. Max.
Parameter
V
(BR)CES
V
CE(on)
V
GE(th)
gfe
I
CES
I
GES
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
1200
—
—
—
3.0
—
—
—
—
—
—
1.2
1.37
1.45
—
-15
30
—
—
—
—
—
1.57
—
6.0
—
—
250
1000
±100
Units
V
V/°C
V
V
S
µA
nA
Conditions
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 33A, V
GE
= 15V, T
J
= 25°C
I
C
= 33A, V
GE
= 15V, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
V
CE
= 50V, I
C
= 33A,PW = 20µS
V
GE
= 0V, V
CE
= 1200V, T
J
= 25°C
V
GE
= 0V, V
CE
= 1200V,T
J
= 150°C
V
GE
= ±20V
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage
V
GE(th)
/TJ Threshold Voltage temp. coefficient
mV/°C V
CE
= V
GE
, I
C
= 250µA (25°C-150°C)
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Q
g
Total Gate Charge (turn-on)
—
151
227
Gate-to-Emitter Charge (turn-on)
—
26
39
Q
ge
Gate-to-Collector Charge (turn-on)
—
62
93
Q
gc
E
off
Turn-Off Switching Loss
—
15
16
t
d(off)
t
f
E
off
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Turn-Off delay time
Fall time
Turn-Off Switching Loss
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
—
—
—
—
—
—
—
—
485
1193
29
689
2462
3804
161
31
616
1371
—
—
—
—
—
—
Units
nC
mJ
ns
mJ
ns
Conditions
I
C
= 33A
V
GE
= 15V
V
CC
= 600V
I
C
= 33A, V
CC
= 600V, V
GE
= 15V
R
G
= 5, L = 400µH, T
J
= 25°C
Energy losses include tail
I
C
= 33A, V
CC
= 600V, V
GE
= 15V
R
G
= 5, L = 400µH, T
J
= 150°C
Energy losses include tail
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 150°C, I
C
= 99A
V
CC
= 960V, Vp
≤
1200V
Rg = 5, V
GE
= +20V to 0V
pF
FULL SQUARE
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 400µH, R
G
= 5.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
is measured at T
J
approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements
2
2018-03-01
AUIRGDC0250
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
T C (°C)
600
500
400
Ptot (W)
IC (A)
300
200
100
0
25
50
75
100
125
150
TC (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
VGE(th) , Gate Threshold Voltage (Normalized)
Fig. 2
- Power Dissipation vs.
Case Temperature
5.0
IC = 1mA
4.5
1000
100
10µsec
10
IC (A)
100µsec
1msec
DC
4.0
1
0.1
3.5
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
VCE (V)
1000
10000
0.01
3.0
25
50
75
100
125
150
T J , Temperature (°C)
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
150°C; V
GE
=15V
1000
100
Fig. 4
- Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
80
100
ICE (A)
60
IC (A)
40
10
20
1
10
100
VCE (V)
1000
10000
0
0
2
4
6
8
10
Fig. 5
- Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
3
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
2018-03-01
AUIRGDC0250
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
80
80
ICE (A)
ICE (A)
60
60
40
40
20
20
0
0
2
4
6
8
10
0
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp =20µs
8
7
6
VCE (V)
8
7
6
Fig. 8
- Typ. IGBT Output Characteristics
TJ = 150°C; tp = 20µs
5
VCE (V)
ICE = 17A
ICE = 33A
ICE = 66A
5
4
3
2
1
0
ICE = 17A
ICE = 33A
ICE = 66A
4
3
2
1
0
5
10
VGE (V)
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
8
7
6
5
VCE (V)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
100
80
ICE = 17A
4
3
2
1
0
5
10
VGE (V)
ICE (A)
ICE = 33A
ICE = 66A
60
T J = 25°C
T J = 150°C
40
20
0
15
20
4
5
6
7
8
9
10
11
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 150°C
4
Fig. 12
- Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
2018-03-01
VGE (V)
AUIRGDC0250
50
45
40
Energy (mJ)
10000
35
30
25
20
15
10
0
10
20
EOFF
Swiching Time (ns)
tF
1000
tdOFF
30
40
50
60
70
100
0
20
40
IC (A)
60
80
IC (A)
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 400µH; V
CE
= 600V, R
G
= 5; V
GE
= 15V
32
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 150°C; L = 400µH; V
CE
= 600V, R
G
= 5; V
GE
= 15V
10000
30
Energy (mJ)
EOFF
28
Swiching Time (ns)
tF
1000
tdOFF
26
24
0
20
40
60
80
100
100
0
20
40
60
80
100
RG ()
Rg (
)
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 400µH; V
CE
= 600V, I
CE
= 33A; V
GE
= 15V
10000
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 400µH; V
CE
= 600V, I
CE
= 33A; V
GE
= 15V
16
VGE, Gate-to-Emitter Voltage (V)
Cies
1000
Capacitance (pF)
14
12
10
8
6
4
2
0
V CES = 600V
V CES = 400V
100
Coes
10
Cres
1
0
100
200
300
VCE (V)
400
500
600
0
20
40
60
80
100 120 140 160
Q G, Total Gate Charge (nC)
Fig. 17
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
5
Fig. 18
- Typical Gate Charge vs. V
GE
I
CE
= 33A; L = 2.0mH
2018-03-01
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