Freescale Semiconductor
Technical Data
Document Number: MRF6S24140H
Rev. 4, 2/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for large--signal output applications at 2450 MHz. Devices
are suitable for use in industrial, medical and scientific applications.
Typical CW Performance at 2450 MHz, V
DD
= 28 Volts, I
DQ
= 1200 mA,
P
out
= 140 Watts
Power Gain — 13.2 dB
Drain Efficiency — 45%
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S24140HR3
MRF6S24140HSR3
2450 MHz, 140 W, 28 V
CW
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 465B-
-04
NI-
-880
MRF6S24140HR3
CASE 465C-
-03
NI-
-880S
MRF6S24140HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Unit
Vdc
Vdc
C
C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 82C, 140 W CW
Case Temperature 75C, 28 W CW
Symbol
R
JC
Value
(2,3)
0.29
0.33
Unit
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2007--2010, 2012. All rights reserved.
MRF6S24140HR3 MRF6S24140HSR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
A
IV
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
Adc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1300 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2
2.8
0.21
3
4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
500
Adc
Adc
nAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fifxture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1300 mA, P
out
= 28 W Avg., f = 2390 MHz, 2--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
5
MHz Offset. IM3 measured in
3.84 MHz Bandwidth @
10
MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
G
ps
D
IM3
ACPR
IRL
13
23
—
—
—
15.2
25
--37
--40
--15
17
—
--35
--38
—
dB
%
dBc
dBc
dB
MRF6S24140HR3 MRF6S24140HSR3
2
RF Device Data
Freescale Semiconductor, Inc.
V
BIAS
R1
+
C10
+
C9
C8
B1
+
C5
Z14
C3
C15
C16
C17
C18
V
SUPPLY
C7
RF
INPUT
Z8
Z6
Z5
Z15
Z7
DUT
Z9
Z10
Z11
Z12
C2
Z13
RF
OUTPUT
Z1
C1
Z2
Z3
Z4
C4
C12
+
C14
+
C13
C11
B2
+
C6
C19
C20
C21
C22
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
0.678 x 0.068 Microstrip
0.466 x 0.068 Microstrip
0.785 x 0.200 Microstrip
0.200 x 0.530 Microstrip
0.025 x 0.530 Microstrip
0.178 x 0.050 Microstrip
0.097 x 1.170 Microstrip
Z9
Z10
Z11
Z12
Z13
Z14, Z15
PCB
0.193 x 1.170 Microstrip
0.115 x 0.550 Microstrip
0.250 x 0.110 Microstrip
0.538 x 0.068 Microstrip
0.957 x 0.068 Microstrip
0.673 x 0.095 Microstrip
Taconic RF--35, 0.030,
r
= 3.5
Figure 1. MRF6S24140HR3(SR3) Test Circuit Schematic — 2450 MHz
Table 5. MRF6S24140HR3(SR3) Test Circuit Component Designations and Values
Part
B1, B2
C1, C2, C3, C4, C5, C6
C7, C11
C8, C12, C15, C19
C9, C13
C10, C14
C16, C17, C20, C21
C18, C22
R1
Description
47
,
100 MHz Short Ferrite Beads, Surface Mount
5.6 pF Chip Capacitors
0.01
F,
100 V Chip Capacitors
2.2
F,
50 V Chip Capacitors
22
F,
25 V Tantalum Capacitors
47
F,
16 V Tantalum Capacitors
10
F,
50 V Chip Capacitors
220
F,
50 V Electrolytic Capacitors
240
,
1/4 W Chip Resistor
Part Number
2743019447
ATC600B5R6BT500XT
C1825C103J1RAC
C1825C225J5RAC
T491D226M025AT
T491D476K016AT
GRM55DR61H106KA88B
2222--150--95102
CRC12062400FKEA
Manufacturer
Fair--Rite
ATC
Kemet
Kemet
Kemet
Kemet
Murata
Vishay
Vishay
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C5
R1
+
+
B1
C17
C10 C9
C8*
C7*
C15
C16
C3
CUT OUT AREA
C1
C4
C2
MRF6S24140H
Rev. 1.0
C19
C20
C13
C12*
* Stacked
Figure 2. MRF6S24140HR3(SR3) Test Circuit Component Layout — 2450 MHz
MRF6S24140HR3 MRF6S24140HSR3
4
RF Device Data
Freescale Semiconductor, Inc.
+
+
C14
B2
C11*
C6
C21
C22
+
+
C18
TYPICAL CHARACTERISTICS — 2450 MHz
16
15
G
ps
, POWER GAIN (dB)
14
13
12
D
11
1
10
28 V
100
32 V
30 V
0
500
G
ps
30 V
30
20
10
I
DQ
= 1200 mA
f = 2450 MHz
50
V
DD
= 28 V
32 V
D
, DRAIN EFFICIENCY (%)
D
, DRAIN EFFICIENCY (%)
40
P
out
, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power as a Function of V
DD
14.5
14
G
ps
, POWER GAIN (dB)
13.5
13
12.5
12
D
11.5
1
10
P
out
, OUTPUT POWER (WATTS) CW
100
V
DD
= 32 V
I
DQ
= 1200 mA
f = 2450 MHz
G
ps
60
50
40
30
20
10
0
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
15
14
G
ps
, POWER GAIN (dB)
13
12
11
10
1
10
P
out
, OUTPUT POWER (WATTS) CW
100
300
V
DD
= 28 V
f = 2450 MHz
G
ps
1400 mA
1200 mA
1000 mA
1100 mA
1300 mA
Figure 5. Power Gain and Drain Efficiency versus
CW Output Power as a Function of Total I
DQ
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor, Inc.
5
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