PN2222A
TO - 92
BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
0.18 (4.6)
min. 0.49 (12.5) 0.18 (4.6)
0.14 (3.6)
* Power dissipation
O
P
CM
: 625mW(Tamb=25 C)
* Collector current
I
CM:
0.6 A
Collector-base voltage
*
V
(BR)CBO
: 75 V
Operating and storage junction temperature range
*
T
J
,T
stg
: -55
O
C to+150
O
C
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
MECHANICAL DATA
*
*
*
*
*
max.
∅
0.022 (0.55)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
0.098 (2.5)
Dimensions in inches
and (millimeters)
Bottom
MAXIMUM RATINGES
( @ T
A
= 25 C unless otherwise noted)
O
(TO-92)
RATINGS
o
O
Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C
SYMBOL
P
D
T
J
T
STG
O
VALUE
625
150
-55 to +150
UNITS
mW
o
o
Max. Operating Temperature Range
Storage Temperature Range
C
C
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina
2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".
SYMBOL
R
qJA
MIN.
-
TYP.
-
MAX.
200
UNITS
o
C/W
2011-2
ELECTRICAL CHARACTERISTICS
(@TA=25
O
C unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I C = 10mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = 10u Adc, I E = 0)
Emitter-Base Breakdown Voltage (I E = 10u Adc, I C = 0)
Collector Cutoff Current (V CE = 60Vdc,V EB(off) = 3.0Vdc
Collector Cutoff Current (V CB = 60Vdc, I E = 0)
(V CB = 60Vdc, I E = 0, TA= 150 C)
Emitter Cutoff Current (V EB = 3.0Vdc, I C = 0)
Base Cutoff Current (V CE = 60Vdc, V EB(off) = 3.0Vdc
O
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
IBL
40
75
6.0
-
-
-
-
-
-
-
-
0.01
0.01
10
0.01
20
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
nAdc
ON CHARACTERISTICS
DC Current Gain (I C = 10mAdc, V CE = 10Vdc, TA= -55 C)
(I C = 500mAdc, V CE = 10Vdc) (1)
Collector-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc)
(I C = 500mAdc, I B = 50mAdc)
Base-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc)
(I C = 500mAdc, I B = 50mAdc)
O
hFE
35
40
-
-
0.6
-
-
-
0.3
1.0
1.2
2.0
-
VCE(sat)
Vdc
VBE(sat)
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (2) (I C = 20mAdc, V CE = 20Vdc, f= 100MHz)
Input Capacitance (V EB =0.5Vdc, I C = 0, f= 1.0MHz)
Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz)
(I C = 10mAdc, V CE =10Vdc, f=1.0kHz)
Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
(I C = 10mAdc, V CE =10Vdc, f= 1.0kHz)
Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
(I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz)
Output Admittance (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
(I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz)
Collector Base Time Constant (I E = 20mAdc, V CB = 20Vdc, f= 31.8MHz)
Noise Figure (I C = 100u Adc, V CE = 10Vdc, R S = 1.0kohms
, f= 1.0kHz)
fT
Cibo
hie
300
-
2.0
0.25
-
-
50
75
5.0
25
-
-
-
25
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
MHz
pF
kohms
hre
X 10 -
4
hfe
-
hoe
rb,Cc
NF
umhos
ps
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = 30Vdc, V BE(off) = -0.5Vdc, I C = 150mAdc, I B1 = 15mAdc)
td
tr
ts
tf
-
-
-
-
10
25
225
60
ns
ns
(V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc)
<
NOTES : 1. Pulse Test: Pulse Width-300ms,Duty Cycle<2.0%
-
2. f
T
is defined as the frequency at which |hfe| extrapolates to unity
RATING AND CHARACTERISTICS CURVES ( PN2222A )
1000
700
500
300
200
100
70
50
30
20
10
01
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20
30
50 70
100
200 300 500 700
1.0k
hFE, DCCURRENT GAIN
Figure 1. DC Current Gain
1.0
VCE, COLLECTOR-EMITTER VOLTAGE (V)
0.8
0.6
0.4
0.2
0
0.005
IC,CCLLECTOR CURRENT (mA)
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
Figure 2. Collector Saturation Region
200
100
70
50
t,TIME (ns)
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
20 30
50 70 100
200 300
500
I
C
/I
B
=10
T
J
=25
O
C
t
r
@V
CC
=30V
t
d
@V
EB
(off)=2.0V
t
d
@V
EB
(off)=0
IB,BASE CURRENT (mA)
500
300
200
t,TIME (ns)
100
70
50
30
20
10
7.0
5.0
5.0 7.0
10
20 30
50 70
100
200 300 500
t's=ts-1/8tf
V
CC
=30V
I
C
/I
B
=10
I
B1
=I
B2
T
J
=25
O
C
tf
Figure 3.Turn-On Time
IC,CLLECTOR CURRENT (mA)
Figure 4.Turn-Off Time
IC,CLLECTOR CURRENT (mA)
RATING AND CHARACTERISTICS CURVES ( PN2222A )
10
8.0
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (KHz)
NT, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
IC=1.0mA,RS=150W
500uA,RS=200W
100uA,RS=2.0KW
50uA,RS=4.0KW
RS=OPTIMUM
SOURCE
RESISTANCE
10
f=1.0KHz
8.0
6.0
4.0
2.0
0
IC=
50uA
100uA
500uA
1.0mA
50 100
50 100 200
500
1.0k 2.0k
5.0k
10k 20k 50k 100k
T, CURRENT-GAINBANDWIDTHPRODUCT (MHz)
Figure 5.Frequency Effects
30
20
CAPACITANCE (PF)
Ceb
Figure 6.Source Resistance Effects
500
VCE=20V
O
TJ=25 C
RS,SOURCE RESISTANCE (OHMS)
300
200
10
7.0
5.0
C
C
b
100
70
50 1.0
2.0 3.0
5.0 7.0
10
20 30
50
70 100
3.0
2.0
0.1 0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
REVERSE VOLTAGE (VOLTS)
Figure 7.Capacitances
1.0
TJ=25 C
VBE(sat)@IC/IB=10
1.0V
O
Figure 8.Currunt-Gain Bandwidth Product
+0.5
0
COEFFICIENT (mV/
O
C)
-0.5
-1.0
-1.5
-2.0
R
q
VB for VBE
IC, COLLECTOR CURRENT (mA)
0.8
V, VOLTAGE (V)
0.6
0.4
0.2
0
R
q
V
C
for
VCE(sat)
VBE(on)@VCE=10V
VCE(sat)@IC/IB=10
0.1 0.2 0.5
1.0 2.0 5.0 10 20 50 100 200 500 1.0k
IC, COLLECTOR CURRENT (mA)
-2.5
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 9."On" Voltages
Figure 10.Temperature Coefficients
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
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