PD- 95160A
IRF5803D2PbF
l
l
l
l
l
l
Co-packaged HEXFET® Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET®
Low V
F
Schottky Rectifier
SO-8 Footprint
Lead-Free
FETKY
TM
FETKY
MOSFET & Schottky Diode
A
A
S
G
1
8
TM
K
K
D
D
V
DSS
= -40V
R
DS(on)
= 112mΩ
Schottky Vf = 0.51V
2
7
3
6
4
5
Description
The
family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings (T
A
= 25°C Unless Otherwise Noted)
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
À
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum
-3.4
-2.7
-27
2.0
1.3
16
± 20
-55 to +150
Units
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
R
θJA
Parameter
Junction-to-Drain Lead, MOSFET
Junction-to-Ambient
,
MOSFET
Junction-to-Ambient
,
SCHOTTKY
Typ.
–––
–––
–––
Max.
20
62.5
62.5
Units
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
Pulse width
≤
400µs – duty cycle
≤
2%
Surface mounted on 1 inch square copper board, t
≤
10sec.
www.irf.com
1
10/7/04
IRF5803D2PbF
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-40
–––
–––
–––
-1.0
4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.03
–––
–––
–––
–––
–––
–––
–––
–––
25
4.5
3.5
43
550
88
50
1110
93
73
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
112
V
GS
= -10V, I
D
= -3.4A
mΩ
190
V
GS
= -4.5V, I
D
= -2.7A
-3.0
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -3.4A
-10
V
DS
= -32V, V
GS
= 0V
µA
-25
V
DS
= -32V, V
GS
= 0V, T
J
= 70°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
37
I
D
= -3.4A
6.8
nC
V
DS
= -20V
5.3
V
GS
= -10V, See Fig. 6 & 14
65
V
DD
= -20V
825
I
D
= -1.0A
ns
130
R
G
= 6.0Ω
75
V
GS
= -10V,
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 100kHz, See Fig. 5
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
MOSFET Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Min.
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
–––
Body Diode Forward Voltage
–––
Reverse Recovery Time (Body Diode)
–––
Reverse Recovery Charge
–––
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Typ. Max. Units
Conditions
––– -2.0
A
––– -27
––– -1.2
V
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
27
40
ns
T
J
= 25°C, I
F
= -2.0A
34
50
nC
di/dt = 100A/µs
Conditions
50% Duty Cycle. Rectangular Waveform, T
A
=30°C
See Fig.21
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Maximum Ratings
If (av)
I
SM
Max. Units
3.0
A
340
70
A
Schottky Diode Electrical Specifications
Vfm
Parameter
Max. Forward Voltage Drop
Max. Units
0.51
0.63
V
0.44
0.59
40
V
3.0 mA
37
405
pF
Conditions
If = 5.0A, Tj = 25°C
If = 10A, Tj = 25°C
If = 5.0A, Tj = 125°C
If = 10A, Tj = 125°C
Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Vr = 40V
Vrrm
Irm
Ct
Max. Working Peak Reverse Voltage
Max. Reverse Leakage Current
Max. Junction Capacitance
2
www.irf.com
IRF5803D2PbF
Power Mosfet Characteristics
100
100
VGS
TOP
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM - 2.7V
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM - 2.7V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
10
10
1
1
-2.7V
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
-2.7V
0.01
0.1
1
10
100
20µs PULSE WIDTH
Tj = 125°C
0.01
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
2.0
I
D
= -3.4A
-I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
1.5
10
T
J
= 150
°
C
1.0
1
0.5
0.1
2.0
V DS = -25V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
8.0
0.0
-60 -40 -20
-
V
GS
= -10V
0
20 40 60 80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF5803D2PbF
Power Mosfet Characteristics
2000
12
Cds
-V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 100 KHZ
C iss
= Cgs + Cgd ,
SHORTED
Crss = Cgd
Coss = Cds + Cgd
I
D
=
-3.4A
10
V
DS
=-32V
V
DS
=-20V
1500
C, Capacitance(pF)
8
Ciss
1000
6
4
500
Coss
Crss
0
1
10
100
2
0
0
5
10
15
20
25
30
-
V , Drain-to-Source Voltage (V)
DS
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-ID, Drain-to-Source Current (A)
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
J
= 150
°
C
10
10
T
J
= 25
°
C
1
100µsec
1
1msec
TA = 25°C
TJ = 150°C
Single Pulse
0.1
1
10
-VDS , Drain-toSource Voltage (V)
100
10msec
0.1
0.4
V
GS
= 0 V
0.8
1.2
1.6
-V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF5803D2PbF
Power Mosfet Characteristics
3.5
V
DS
3.0
R
D
V
GS
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
-I
D
, Drain Current (A)
D.U.T.
+
2.0
1.5
1.0
0.5
V
GS
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
0.0
25
50
75
100
125
150
10%
T
C
, Case Temperature ( ° C)
90%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
V
DS
Fig 10b.
Switching Time Waveforms
100
Thermal Response(Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
0.1
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
-
2.5
V
DD
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
