VS-ST733CL Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case B-PUK (TO-200AC)
• High surge current capability
• Low thermal impedance
B-PUK (TO-200AC)
• High speed performance
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
Circuit configuration
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
C
/T
hs
B-PUK (TO-200AC)
Single SCR
940 A
400 V, 800 V
1.63 V
20 000 A
20 950 A
200 mA
55 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Range
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
940
55
1900
25
20 000
20 950
2000
1820
400 to 800
10 to 20
-40 to +125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
VOLTAGE
V
500
900
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
75
VS-ST733C..L
Revision: 13-Sep-17
Document Number: 94378
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST733CL Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
R
Voltage before turn-on V
D
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
2200
2050
1370
500
50
V
DRM
50
40
10/0.47
1900
1660
1070
370
3580
3600
2900
1220
50
V
DRM
-
3100
3130
2450
980
6800
3750
2120
960
50
V
DRM
-
5920
3240
1780
770
V
A/μs
55
10/0.47
°C
/μF
A
55
40
10/0.47
55
40
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state
current at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
940 (350)
55 (85)
1900
20 000
20 950
16 800
Sinusoidal half wave,
initial T
J
= T
J
maximum
17 600
2000
1820
1410
1290
20 000
1.63
1.09
1.20
0.32
0.29
600
1000
m
V
kA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
I
TM
= 1700 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Maximum turn-off time
minimum
maximum
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
, I
TM
= 2 x dI/dt
Gate pulse: 20 V 20
,
10 μs 0.5 μs rise time
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
maximum, I
TM
= 550 A, commutating dI/dt = 40 A/μs,
V
R
= 50 V, t
p
= 500 μs, dV/dt: see table in device code
VALUES
1000
1.5
10
20
μs
UNITS
A/μs
Revision: 13-Sep-17
Document Number: 94378
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST733CL Series
www.vishay.com
Vishay Semiconductors
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
75
UNITS
V/μs
mA
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJ-hs
R
thC-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.073
0.031
0.011
0.005
14 700
(1500)
255
N
(kg)
g
K/W
UNITS
°C
B-PUK (TO-200AC)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.009
0.011
0.014
0.020
0.036
DOUBLE SIDE
0.009
0.011
0.014
0.021
0.036
RECTANGULAR CONDUCTION
SINGLE SIDE
0.006
0.011
0.015
0.021
0.036
DOUBLE SIDE
0.006
0.011
0.015
0.022
0.036
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 13-Sep-17
Document Number: 94378
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST733CL Series
www.vishay.com
Vishay Semiconductors
130
ST733C..L Series
(Double
Side
Cooled)
R
thJ-hs
(DC) = 0.031 K/W
130
Maximum Allowable Heatsink
Temperature (°C)
120
110
100
90
80
70
60
50
40
0
100
200
30°
Maximum Allowable Heatsink
Temperature (°C)
ST733C..L Series
(Single
Side
Cooled)
R
thJ-hs
(DC) = 0.073 K/W
120
110
100
90
80
70
60
50
40
30
20
0
500
30°
60°
Conduction Angle
Conduction Period
60°
90°
120°
180°
90°
120°
180°
DC
1000
1500
2000
300
400
500
600
700
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 4 - Current Ratings Characteristics
130
Maximum Allowable Heatsink
Temperature (°C)
110
100
90
80
70
60
50
40
30
20
0
200
30°
Maximum Average On-state
Power Loss (W)
120
ST733C..L Series
(Single
Side
Cooled)
R
thJ-hs
(DC) = 0.073 K/W
2500
180°
120°
90°
60°
30°
2000
RMS Limit
Conduction Period
1500
1000
Conduction Angle
500
ST733C..L Series
T
J
= 125°C
0
200
400
600
800
1000 1200 1400
60°
90°
120°
180°
800
DC
1000
0
400
600
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 5 - On-State Power Loss Characteristics
130
Maximum Allowable Heatsink
Temperature (°C)
110
100
90
80
70
60
50
40
30
20
0
200
400
30°
Maximum Average On-state
Power Loss (W)
120
ST733C..L Series
(Double
Side
Cooled)
R
thJ-hs
(DC) = 0.031 K/W
2500
180°
120°
90°
60°
30°
2000
RMS Limit
1500
Conduction Angle
1000
Conduction Angle
500
ST733C..L Series
T
J
= 125°C
0
200
400
600
800
1000
1200
1400
60°
90°
120°
180°
0
600
800
1000 1200 1400
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 13-Sep-17
Document Number: 94378
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST733CL Series
www.vishay.com
Vishay Semiconductors
Z
thJ-hs
- Transient Thermal Impedance (K/W)
0.1
ST733C..L Series
18 000
Peak Half
Sine
Wave
On-state Current (A)
16 000
At Any Rated Load Condition And With
Rated V
RRM
Applied Following
Surge.
Initial T
J
= 125°C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
14 000
0.01
Steady State
Value
R
thJ-hs
= 0.073 K/W
(Single
Side
Cooled)
R
thJ-hs
= 0.031 K/W
(Double
Side
Cooled)
(DC Operation)
12 000
10 000
ST733C..L Series
8000
1
10
100
0.001
0.001
0.01
0.1
1
10
100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
20 000
18 000
16 000
14 000
12 000
10 000
ST733C..L Series
8000
0.01
0.1
1
Maximum Non Repetitive
Surge
Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
Square
Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
thJC
Characteristics
Q
rr -
Maximum Reverse Recovery Charge (μC)
450
400
350
300
250
200
150
100
50
0
10
20
30
40
50
60
70
80
90
100
500 A
1000 A
ST733C..L Series
T
J
= 125 °C
I
TM
= 1500 A
Peak Half
Sine
Wave
On-state Current (A)
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
dI
F
dt
- Rate of Fall of On-State Current (A/μs)
Fig. 11 - Reverse Recovered Charge Characteristics
Instantaneous On-state Current (A)
10 000
I
rr -
Maximum Reverse Recovery Current (A)
250
I
TM
= 1500 A
200
1000 A
150
1000
T
J
= 25 °C
T
J
= 125 °C
500 A
100
ST733C..L Series
50
ST733C..L Series
T
J
= 125 °C
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
10
20
30
40
50
60
70
80
90
100
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
dI
F
dt
- Rate of Fall of Forward Current (A/μs)
Fig. 12 - Reverse Recovered Current Characteristics
Revision: 13-Sep-17
Document Number: 94378
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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