3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Features
◆
◆
IDT71V016SA
◆
◆
◆
◆
◆
◆
64K x 16 advanced high-speed CMOS Static RAM
Equal access and cycle times
— Commercial: 10/12/15/20ns
— Industrial: 10/12/15/20ns
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
LVTTL-compatible
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Single 3.3V power supply
Available in 44-pin Plastic SOJ, 44-pin TSOP, and
48-Ball Plastic FBGA packages
Description
The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized
as 64K x 16. It is fabricated using high-perfomance, high-reliability CMOS
technology. This state-of-the-art technology, combined with innovative
circuit design techniques, provides a cost-effective solution for high-speed
memory needs.
The IDT71V016 has an output enable pin which operates as fast as
5ns, with address access times as fast as 10ns. All bidirectional inputs and
outputs of the IDT71V016 are LVTTL compatible and operation is from a
single 3.3V supply. Fully static asynchronous circuitry is used, requiring
no clocks or refresh for operation.
The IDT71V016 is packaged in a JEDEC standard 44-pin Plastic SOJ,
a 44-pin TSOP Type II, and a 48-ball plastic 7 x 7 mm FBGA.
Functional Block Diagram
Output
Enable
Buffer
OE
A
0
– A
15
Address
Buffers
Row / Column
Decoders
I/O
15
Chip
Enable
Buffer
Sense
Amps
and
Write
Drivers
8
Low
Byte
I/O
Buffer
8
8
High
Byte
I/O
Buffer
8
CS
I/O
8
WE
Write
Enable
Buffer
64K x 16
Memory
Array
16
I/O
7
I/O
0
BHE
Byte
Enable
Buffers
BLE
3834 drw 01
AUGUST 2013
1
©
2013
Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.
DSC-3834/13
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Pin Configurations
A
4
A
3
A
2
A
1
A
0
CS
I/O
0
I/O
1
I/O
2
I/O
3
V
DD
V
SS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
15
A
14
A
13
A
12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
SO44-1
SO44-2
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
BHE
BLE
I/O
15
I/O
14
I/O
13
I/O
12
V
SS
V
DD
I/O
11
I/O
10
I/O
9
I/O
8
NC
A
8
A
9
A
10
A
11
NC
1
A
B
C
D
E
F
G
H
BLE
I/O
8
I/O
9
V
SS
V
DD
I/O
14
I/O
15
NC
2
OE
BHE
I/O
10
I/O
11
I/O
12
I/O
13
NC
A
8
3
A
0
A
3
A
5
NC
NC
A
14
A
12
A
9
4
A
1
A
4
A
6
A
7
NC
A
15
A
13
A
10
5
A
2
CS
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
NC
I/O
0
I/O
2
V
DD
V
SS
I/O
6
I/O
7
NC
3834 tbl 02a
FBGA (BF48-1)
Top View
Pin Description
3834 drw 02
SOJ/TSOP
Top View
Truth Table
(1)
CS
H
L
L
L
L
L
L
L
L
OE
X
L
L
L
X
X
X
H
X
WE
X
H
H
H
L
L
L
H
X
BLE
X
L
H
L
L
L
H
X
H
BHE
X
H
L
L
L
H
L
X
H
I/O
0
-I/O
7
High-Z
DATA
OUT
High-Z
DATA
OUT
DATA
IN
DATA
IN
High-Z
High-Z
High-Z
I/O
8
-I/O
15
High-Z
High-Z
DATA
OUT
DATA
OUT
DATA
IN
High-Z
DATA
IN
High-Z
High-Z
Function
Deselected – Standby
Low Byte Read
High Byte Read
Word Read
Word Write
Low Byte Write
High Byte Write
Outputs Disabled
Outputs Disabled
3834 tbl 02
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't care.
2
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings
(1)
Symbol
V
DD
Rating
Supply Voltage Relative to V
SS
Value
–0.5 to +4.6
–0.5 to V
DD
+0.5
–55 to +125
–55 to +125
1.25
50
Unit
V
V
o
o
Recommended Operating
Temperature and Supply Voltage
Grade
Commercial
Industrial
Temperature
0°C to +70°C
-40°C to +85°C
V
SS
0V
0V
V
DD
See Below
See Below
3834 tbl 04
V
IN
, V
OUT
Terminal Voltage Relative to V
SS
T
BIAS
T
STG
P
T
I
OUT
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
C
C
W
mA
3834 tbl 03
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Recommended DC Operating
Conditions
Symbol
V
DD
(1)
V
DD
(2)
Vss
V
IH
Parameter
Supply Voltage
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.15
3.0
0
2.0
–0.3
(4)
Typ.
3.3
3.3
0
____
____
Max.
3.6
3.6
0
V
DD
+0.3
(3)
0.8
Unit
V
V
V
V
V
3834 tbl 05
Capacitance
Symbol
C
IN
C
I/O
(T
A
= +25°C, f = 1.0MHz, SOJ package)
Parameter
(1)
Input Capacitance
I/O Capacitance
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
6
7
Unit
pF
pF
V
IL
3834 tbl 06
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
NOTES:
1. For 71V016SA10 only.
2. For all speed grades except 71V016SA10.
3. V
IH
(max.) = V
DD
+2V for pulse width less than 5ns, once per cycle.
4. V
IL
(min.) = –2V for pulse width less than 5ns, once per cycle.
DC Electrical Characteristics
(V
DD
= Min. to Max., Commercial and Industrial Temperature Ranges)
IDT71V016SA
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Condition
V
DD
= Max., V
IN
= V
SS
to V
DD
V
DD
= Max.,
CS
= V
IH
, V
OUT
= V
SS
to V
DD
I
OL
= 8mA, V
DD
= Min.
I
OH
= –4mA, V
DD
= Min.
Min.
___
___
___
Max.
5
5
0.4
___
Unit
µA
µA
V
V
3834 tbl 07
2.4
(V
DD
= Min. to Max., V
LC
= 0.2V, V
HC
= V
DD
– 0.2V)
DC Electrical Characteristics
(1,2)
71V016SA10
Symbol
I
CC
Parameter
Dynamic Operating Current
CS
≤
V
LC
, Outputs Open, V
DD
= Max., f = f
MAX
(3)
Dynamic Standby Power Supply Current
CS
≥
V
HC
, Outputs Open, V
DD
= Max., f = f
MAX
(3)
Full Standby Power Supply Current (static)
CS
≥
V
HC
, Outputs Open, V
DD
= Max., f = 0
(3)
Max.
Typ.
(4)
Com'l
160
65
45
10
Ind'l
170
--
50
10
71V016SA12
Com'l
150
60
40
10
Ind'l
160
--
45
10
71V016SA15
Com'l
130
55
35
10
Ind'l
130
--
35
10
71V016SA20
Com'l
120
50
30
10
Ind'l
120
--
30
10
mA
mA
3834 tbl 08
Unit
mA
I
SB
I
SB1
NOTES:
1. All values are maximum guaranteed values.
2. All inputs switch between 0.2V (Low) and V
DD
– 0.2V (High).
3. f
MAX
= 1/t
RC
(all address inputs are cycling at f
MAX
); f = 0 means no address input lines are changing .
4. Typical values are based on characterization data for H step only measured at 3.3V, 25°C and with equal read and write cycles.
3
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
AC Test Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
1.5ns
1.5V
1.5V
See Figure 1, 2 and 3
3834 tbl 09
AC Test Loads
3.3V
+1.5V
50Ω
I/O
Z
0
= 50Ω
30pF
3834 drw 03
320Ω
DATA
OUT
5pF*
350Ω
3834 drw 04
*Including jig and scope capacitance.
Figure 1. AC Test Load
Figure 2. AC Test Load
(for t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
OW,
and t
WHZ
)
7
Δt
AA,
t
ACS
(Typical, ns) 5
4
3
2
1
•
•
•
•
•
•
•
6
8 20 40 60 80 100 120 140 160 180 200
CAPACITANCE (pF)
3834 drw 05
Figure 3. Output Capacitive Derating
4
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(V
DD
= Min. to Max., Commercial and Industrial Temperature Ranges)
71V016SA10
Symbol
READ CYCLE
t
RC
t
AA
t
ACS
t
CLZ
(1)
t
CHZ
(1)
t
OE
t
OLZ
(1)
t
OHZ
(1)
t
OH
t
BE
t
BLZ
(1)
t
BHZ
(1)
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Low to Output in Low-Z
Chip Select High to Output in High-Z
Output Enable Low to Output Valid
Output Enable Low to Output in Low-Z
Output Enable High to Output in High-Z
Output Hold from Address Change
Byte Enable Low to Output Valid
Byte Enable Low to Output in Low-Z
Byte Enable High to Output in High-Z
10
____
____
____
71V016SA12
Min.
Max.
71V016SA15
Min.
Max.
71V016SA20
Min.
Max.
Unit
Parameter
Min.
Max.
12
____
____
____
15
____
____
____
20
____
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
10
____
12
12
____
15
15
____
20
20
____
4
____
____
4
____
____
5
____
____
5
____
____
5
5
____
6
6
____
6
7
____
8
8
____
0
____
0
____
0
____
0
____
5
—
5
____
6
—
6
____
6
—
7
____
8
—
8
____
4
—
0
____
4
—
0
____
4
—
0
____
4
____
0
____
5
6
6
8
WRITE CYCLE
t
WC
t
AW
t
CW
t
BW
t
AS
t
WR
t
WP
t
DW
t
DH
t
OW
(1)
t
WHZ
(1)
Write Cycle Time
Address Valid to End of Write
Chip Select Low to End of Write
Byte Enable Low to End of Write
Address Set-up Time
Address Hold from End of Write
Write Pulse Width
Data Valid to End of Write
Data Hold Time
Write Enable High to Output in Low-Z
Write Enable Low to Output in High-Z
10
7
7
7
0
0
7
5
0
3
____
____
____
____
____
____
____
____
____
____
____
12
8
8
8
0
0
8
6
0
3
____
____
____
____
____
____
____
____
____
____
____
15
10
10
10
0
0
10
7
0
3
____
____
____
____
____
____
____
____
____
____
____
20
12
12
12
0
0
12
9
0
3
____
____
____
____
____
____
____
____
____
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3834 tbl 10
5
6
6
8
NOTE:
1. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
Timing Waveform of Read Cycle No. 1
(1,2,3)
t
RC
ADDRESS
t
AA
t
OH
DATA
OUT
PREVIOUS DATA
OUT
VALID
t
OH
DATA
OUT
VALID
3834 drw 06
NOTES:
1.
WE
is HIGH for Read Cycle.
2. Device is continuously selected,
CS
is LOW.
3.
OE, BHE,
and
BLE
are LOW.
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
