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VI10150C-E3-4W

产品描述Schottky Diodes u0026 Rectifiers 10 Amp 150 Volt Dual TrenchMOS
产品类别半导体    分立半导体   
文件大小137KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
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VI10150C-E3-4W概述

Schottky Diodes u0026 Rectifiers 10 Amp 150 Volt Dual TrenchMOS

VI10150C-E3-4W规格参数

参数名称属性值
产品种类
Product Category
Schottky Diodes & Rectifiers
制造商
Manufacturer
Vishay(威世)
RoHSDetails
产品
Product
Schottky Rectifiers
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-262AA
If - Forward Current10 A
Vrrm - Repetitive Reverse Voltage150 V
Vf - Forward Voltage1.41 V
Ifsm - Forward Surge Current60 A
ConfigurationDual Common Cathode
技术
Technology
Si
Ir - Reverse Current100 uA
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Tube
高度
Height
8.89 mm
长度
Length
10.45 mm
工作温度范围
Operating Temperature Range
- 55 C to + 150 C
工厂包装数量
Factory Pack Quantity
1000
类型
Type
Schottky Diode
宽度
Width
4.7 mm
单位重量
Unit Weight
0.050795 oz

文档预览

下载PDF文档
V10150C, VI10150C
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.63 at I
F
= 3 A
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
TO-262AA
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2
V10150C
PIN 1
PIN 3
3
1
VI10150C
PIN 1
PIN 3
2
3
1
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 2
K
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 5 A
T
J
max.
Package
Diode variation
2 x 5.0 A
150 V
60 A
0.69 V
150 °C
TO-220AB, TO-262AA
Common cathode
Case:
TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs max.
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
V10150C
150
10
5.0
60
10 000
-55 to +150
VI10150C
UNIT
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 3 A
Instantaneous forward voltage per diode
I
F
= 5 A
I
F
= 3 A
I
F
= 5 A
V
R
= 100 V
Reverse current per diode
V
R
= 150 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
SYMBOL
TYP.
0.82
0.99
0.63
0.69
0.5
0.5
-
1.0
MAX.
-
1.41
-
0.75
-
-
100
10
μA
mA
μA
mA
V
UNIT
Revision: 07-Nov-17
Document Number: 89154
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VI10150C-E3-4W相似产品对比

VI10150C-E3-4W VI10150S-E3-4W
描述 Schottky Diodes u0026 Rectifiers 10 Amp 150 Volt Dual TrenchMOS Schottky Diodes u0026 Rectifiers 10 Amp 150 Volt Single TrenchMOS
产品种类
Product Category
Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers
制造商
Manufacturer
Vishay(威世) Vishay(威世)
RoHS Details Details
产品
Product
Schottky Rectifiers Schottky Rectifiers
安装风格
Mounting Style
Through Hole Through Hole
封装 / 箱体
Package / Case
TO-262AA TO-262AA
If - Forward Current 10 A 10 A
Vrrm - Repetitive Reverse Voltage 150 V 150 V
Vf - Forward Voltage 1.41 V 1.2 V
Ifsm - Forward Surge Current 60 A 120 A
Configuration Dual Common Cathode Single Dual Anode
技术
Technology
Si Si
Ir - Reverse Current 100 uA 150 uA
最小工作温度
Minimum Operating Temperature
- 55 C - 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C + 150 C
系列
Packaging
Tube Tube
高度
Height
8.89 mm 8.89 mm
长度
Length
10.45 mm 10.45 mm
工作温度范围
Operating Temperature Range
- 55 C to + 150 C - 55 C to + 150 C
类型
Type
Schottky Diode Schottky Diode
宽度
Width
4.7 mm 4.7 mm
单位重量
Unit Weight
0.050795 oz 0.050795 oz

 
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