IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 1200V
I
C
= 50A, T
C
=100°C
t
SC
10µs,
T
J(max)
= 150°C
V
CE(ON)
typ. = 1.9V
@ I
C
= 35A
G
E
C
C
C
G
CE
G
CE
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
n-channel
G
Gate
IRG7PH50K10DPbF
C
Collector
IRG7PH50K10D‐EPbF
E
Emitter
Features
Low V
CE(ON)
and switching losses
10µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 150°C
Positive V
CE (ON)
Temperature Coefficient
Base part number
IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
=20V
Clamped Inductive Load Current, V
GE
=20V
Diode Continous Forward Current
Diode Continous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Package Type
TO-247AC
TO-247AD
Benefits
High efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
Max.
1200
90
50
160
160
20
10
±30
400
160
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.3
1.4
–––
40
Units
°C/W
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March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)CES
/T
J
V
CE(on)
V
GE(th)
V
GE(th)
/T
J
gfe
I
CES
I
GES
V
F
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage Temperature Coeff.
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Min.
1200
—
—
—
5.0
—
—
—
—
—
—
—
Typ.
—
1.4
1.9
2.4
—
-16
20
1.0
1200
—
2.5
2.4
Max.
—
—
Units
Conditions
V
V
GE
= 0V, I
C
= 250µA
V/°C V
GE
= 0V, I
C
= 2mA (25°C-150°C)
2.4
V
I
C
= 35A, V
GE
= 15V, T
J
= 25°C
—
I
C
= 35A, V
GE
= 15V, T
J
= 150°C
7.5
V
V
CE
= V
GE
, I
C
= 1.7mA
—
mV/°C V
CE
= V
GE
, I
C
= 1.7mA (25°C-150°C)
—
S
V
CE
= 50V, I
C
= 35A, PW = 20µs
35
µA V
GE
= 0V, V
CE
= 1200V
—
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
±100
nA V
GE
= ±30V
3.3
V
I
F
= 8A
—
V
I
F
= 8A, T
J
= 150°C
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Total Gate Charge (turn-on)
—
200
Q
g
Gate-to-Emitter Charge (turn-on)
—
40
Q
ge
Q
gc
Gate-to-Collector Charge (turn-on)
—
90
E
on
Turn-On Switching Loss
—
2.6
E
off
Turn-Off Switching Loss
1.6
E
total
Total Switching Loss
4.2
t
d(on)
Turn-On delay time
—
90
t
r
Rise time
—
60
Turn-Off delay time
—
340
t
d(off)
Fall time
—
90
t
f
Turn-On Switching Loss
—
3.5
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement
.
Max Units
Conditions
300
I
C
= 35A
60
nC V
GE
= 15V
V
CC
= 600V
135
3.5
2.5
mJ
I
C
= 35A, V
CC
= 600V, V
GE
=15V
6.0
R
G
= 5, T
J
= 25°C
105
Energy losses include tail & diode
80
ns reverse recovery
390
110
—
—
—
—
—
—
—
—
—
mJ
I
C
= 35A, V
CC
= 600V, V
GE
=15V
R
G
= 5, T
J
= 150°C
Energy losses include tail & diode
reverse recovery
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
—
—
—
—
—
2.8
6.3
70
60
350
250
4300
190
100
ns
FULL SQUARE
10
—
—
—
—
190
130
13
—
—
—
—
V
GE
= 0V
pF V
CC
= 30V
f = 1.0Mhz
T
J
= 150°C, I
C
= 160A
V
CC
= 960V, Vp
≤
1200V
V
GE
= +20V to 0V
T
J
= 150°C,V
CC
= 600V, Vp
≤
1200V
µs
V = +15V to 0V
GE
µJ
ns
A
T
J
= 150°C
V
CC
= 600V, I
F
= 8A
V
GE
= 15V, Rg = 5
2
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March 12, 2014
90
80
70
Load Current ( A )
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 161W
60
50
40
30
I
Square Wave:
V
CC
20
Diode as specified
10
0
0.1
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
450
400
80
350
300
Ptot (W)
60
IC (A)
250
200
150
40
20
100
50
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC (°C)
TC (°C)
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
1000
Fig. 3
- Power Dissipation vs.
Case Temperature
100
10µsec
IC (A)
100
IC (A)
10
100µsec
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
VCE (V)
DC
10
1
0.1
1000
10000
1
10
100
VCE (V)
1000
10000
Fig. 4
- Forward SOA
T
C
= 25°C, T
J
150°C, V
GE
=15V
3
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Fig.
5- Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
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March 12, 2014
160
140
120
100
ICE (A)
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
160
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
ICE (A)
140
120
100
80
60
40
20
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
80
60
40
20
0
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
V CE (V)
V CE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
160
140
120
100
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
160
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
140
120
100
IF (A)
TJ =150°C
TJ = 25°C
TJ = -40°C
80
60
40
20
0
0
1
2
3
4
5
6
7
8
9
10
80
60
40
20
0
0.0
2.0
4.0
6.0
8.0
10.0
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 20µs
8
ICE = 18A
ICE = 35A
ICE = 70A
VCE (V)
V CE (V)
V F (V)
Fig. 9
- Typ. Diode Forward Characteristics
tp = 20µs
8
ICE = 18A
ICE = 35A
ICE = 70A
6
VCE (V)
6
4
4
2
2
0
6
8
10
12
14
16
18
20
V GE (V)
0
6
8
10
12
14
16
18
20
V GE (V)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
www.irf.com © 2014 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
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March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
8
IC, Collector-to-Emitter Current (A)
160
ICE = 18A
ICE = 35A
ICE = 70A
140
120
100
80
60
40
20
0
6
8
10
12
14
16
18
20
4
6
8
10
12
14
V GE (V)
V GE, Gate-to-Emitter Voltage (V)
TJ = 25°C
TJ = 150°C
6
VCE (V)
4
2
0
10
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
1000
tdOFF
Swiching Time (ns)
8
Energy (mJ)
6
EON
4
EOFF
2
tF
100
tdON
tR
0
0
10
20
30
40
IC (A)
50
60
70
80
10
0
10
20
30
40
50
60
70
IC (A)
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 150°C; V
CE
= 600V, R
G
= 5; V
GE
= 15V
10
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 150°C; V
CE
= 600V, R
G
= 5; V
GE
= 15V
10000
8
EON
6
EOFF
Swiching Time (ns)
Energy (mJ)
1000
tdOFF
tdON
tR
tF
4
100
2
10
0
0
20
40
60
RG ()
80
100
120
1
0
20
40
60
80
100
RG (
)
Fig. 16
- Typ. Energy Loss vs. RG
T
J
= 150°C; V
CE
= 600V, I
CE
= 35A; VGE = 15V
5
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Fig. 17
- Typ. Switching Time vs. RG
T
J
= 150°C; V
CE
= 600V, I
CE
= 35A; V
GE
= 15V
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March 12, 2014
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